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BLC6G22LS-75,112

NXP Semiconductors

BLC6G22LS-75,112 by NXP Semiconductors

BLC6G22LS-75,112 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 18 A and operates up to 150 °C, making it ideal for high-performance power applications in compact designs.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

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AZTECH Wire

Italy . 593 parts In-Stock

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One Stop Electronics

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Native Components

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Northwest PG Solutions

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Overview

Unlock the potential of your projects with the BLC6G22LS-75,112 from NXP Semiconductors. Renowned for their reliability and innovation, NXP delivers top-tier power FET technology that excels in efficiency and thermal management. Ideal for a variety of applications, this N-channel transistor guarantees robust performance while saving space with its surface mount design. Experience superior quality and enhanced operational benefits that drive success in your electronic endeavors.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically provide higher efficiency and better performance in power applications, making them suitable for a wide range of digital and analog circuits.

Configuration: SINGLE

Single configuration simplifies the design and integration into circuits, reducing space and complexity compared to dual configurations.

Surface Mount: YES

Surface mount technology allows for compact designs, making the FET ideal for modern electronics where space saving is essential.

Operating Mode: ENHANCEMENT MODE

Enhancement mode provides high input impedance, resulting in lower power consumption and increased efficiency, which is essential for battery-powered applications.

Maximum Drain Current (Abs) (ID): 18 A

With a maximum drain current of 18 A, this FET can handle significant power loads, making it suitable for high-performance and demanding applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers advantages such as high speed, low on-resistance, and high input impedance, which enhances overall circuit performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows for reliable performance in harsh environments, reducing the risk of thermal failure in demanding applications.

Maximum Drain Current (ID): 18 A

This specification confirms the FET's capability to support high current applications, making it an excellent choice for power management and switching applications.

Technical Specifications

Power Field Effect Transistors (FET) BLC6G22LS-75,112 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

18 A

Maximum Drain Current (ID):

18 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

BLC6G22LS-75,112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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