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2SK3466(TE24L,Q)

Toshiba

2SK3466(TE24L,Q) by Toshiba

Toshiba's 2SK3466(TE24L,Q) is an N-CHANNEL Power FET with a max drain current of 5A and power dissipation of 50W. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies or motor control systems.

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AZTECH Wire

Italy . 505 parts In-Stock

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Ampacity Inc.

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Overview

Upgrade your electronics with the top-quality 2SK3466(TE24L,Q) Power FET by Toshiba. Renowned for their superior manufacturing standards, Toshiba delivers reliable and efficient components that guarantee optimal performance. Ideal for a variety of applications, this N-CHANNEL FET offers enhanced power capabilities and temperature resistance, making it the perfect choice for demanding projects. Trust Toshiba to provide you with the value and benefits you need to take your designs to the next level.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have lower ON resistance and higher efficiency compared to P-CHANNEL FETs, making them suitable for many power applications.

Configuration: SINGLE

Single configuration FETs are simpler to use and integrate into circuits, making them more user-friendly for design and implementation.

Surface Mount: YES

Surface mount FETs are smaller in size, require less space on a PCB, and are easier to solder, making them ideal for compact designs and mass production.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer fast switching speeds and low ON resistance, making them efficient for controlling power flow in various applications.

Maximum Drain Current (Abs) (ID): 5 A

With a high maximum drain current of 5A, this FET can handle moderate to high power loads, making it suitable for various power management systems.

Maximum Power Dissipation (Abs): 50 W

The high maximum power dissipation of 50W ensures that the FET can handle high power levels without overheating, resulting in reliable performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor FETs offer good thermal stability, low gate-drive requirements, and high switching speeds, making them versatile for different applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high temperatures, making it suitable for industrial and automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) 2SK3466(TE24L,Q) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Toshiba

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

2SK3466(TE24L,Q) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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