Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
The Toshiba 2SK3476(TE12L,Q) is an N-CHANNEL Power FET with a max drain current of 3A and power dissipation of 20W. Ideal for applications requiring high power efficiency, such as in power supplies or motor control systems. Operating in enhancement mode, it offers reliable performance up to 150°C.
Median Price
$2.260
Lifecycle Status
Suppliers In-Stock
5
In-Stock Inventory
1k+
Chip1Stop
1+ parts
100+ parts
-
1k+ parts
10k+ parts
Verical
VNN
Avant Electronics Limited
Nova Conductors
Component Stockers USA
$1.170
$1.110
$1.080
Ampacity Inc.
$1.920
GreenTree Electronics
Argo Parts USA
Kepictronics
Continental Prestige Electronics
Aranea Global
Futuretech Components
Perfect Parts
N-CHANNEL FETs are known for their high efficiency and fast switching speeds, making them suitable for a wide range of applications.
Single configuration FETs are easy to install and suitable for simpler circuits, making them a cost-effective choice for many applications.
Surface mount FETs are compact and lightweight, allowing for easy integration into small electronic devices or circuits.
Enhancement mode FETs offer better control over the flow of current, leading to improved efficiency and performance in electronic circuits.
With a maximum drain current of 3 A, this FET can handle high current loads, making it suitable for power applications.
With a maximum power dissipation of 20W, this FET can handle high power levels without overheating, ensuring reliable operation in demanding environments.
Metal-oxide semiconductor technology offers high reliability and stability, making this FET a durable and long-lasting choice for electronic circuits.
With a maximum operating temperature of 150°C, this FET can withstand high temperatures without compromising performance, making it suitable for a wide range of industrial applications.
Power Field Effect Transistors (FET) 2SK3476(TE12L,Q) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Toshiba
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
No. of Elements:
Operating Mode:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
2SK3476(TE12L,Q) Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
1N4148
Wuxi Xuyang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358N
Kec
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
OPA2277UA/2K5
Texas Instruments
OPA2277UA/2K5 by Texas Instruments is a dual operational amplifier with low offset voltage of 100 uV and micropower consumption of 0.004 uA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1 MHz. With a compact rectangular package style, it is suitable for surface mount designs in various electronic systems.
FDD5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
LL4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
Sensitron Semiconductor
SMBJ18CA
Micro Commercial Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20U+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
Won-top Electronics
Microsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
Vishay Intertechnology
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
BAV99
ROHM
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Samsung
MBRS130LT3G
Onsemi
MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.
LM107H/883C
National Semiconductor
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
1552200168
Molex
WIRE AND CABLE;
IAUT300N10S5N015ATMA1
Infineon's IAUT300N10S5N015ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 1200A IDM and 0.0015 ohm RDS(on), it operates in ENHANCEMENT MODE with 44ns ton and 118ns toff. This MOSFET has a max power dissipation of 375W, making it suitable for high-power electronic systems.
BBS3002-DL-1E
Sanyo Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Package Shape: RECTANGULAR; Case Connection: DRAIN;
G3R450MT17J
Genesic Semiconductor
G3R450MT17J by Genesic Semiconductor is a N-CHANNEL Power FET with 1700V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 12A and EAS of 59mJ. With SILICON CARBIDE material, it operates b/w -55 to 175 °C and has 0.63 ohm Drain-Source Resistance.
SI4532DY
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V;
G2R1000MT17D
Power Field-Effect Transistors;
FQP3P50
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; No. of Terminals: 3; Transistor Application: SWITCHING;
SI7116DN-T1-E3
SI7116DN-T1-E3 by Vishay Intertechnology is an N-CHANNEL FET with 40V DS Breakdown Voltage, 60A IDM, and 0.0078 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.8W.
IRLML6246TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
IRFP460PBF
Vishay Intertechnology's IRFP460PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at up to 150°C.
IXTA96P085T
IXYS Corporation
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
IRFR5305TRLPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; JESD-609 Code: e3; Terminal Form: GULL WING;
FDS6680A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
SQ2361ES-T1_GE3
The Vishay Intertechnology SQ2361ES-T1_GE3 is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 11A and an avalanche energy rating of 7.8mJ. This transistor is suitable for applications requiring high power and efficient switching capabilities.
IRLML2502
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 33 A; Additional Features: HIGH RELIABILITY; No. of Elements: 1;
IRLML6401TRPBF-1
Infineon's IRLML6401TRPBF-1 is a P-channel FET with 12V DS breakdown voltage, 34A IDM, and 0.05 ohm RDS(on). Ideal for power management applications due to its small outline package style and high operating temperature of 150°C.
IRLML6401TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
IRLML0030TRPBF
Infineon's IRLML0030TRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.3A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 1.3W Power Dissipation, and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
FDB3632
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 310 W; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30;
FDS6675BZ
FDS6675BZ by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 55A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it offers low 0.013 ohm Drain-Source On Resistance and can handle up to 2.5W power dissipation.
CSD18540Q5BT
CSD18540Q5BT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 400A IDM, and 0.0033 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it can handle temperatures from -55 to 175 °C.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
2SK3878
Toshiba
Toshiba's 2SK3878 is a N-CHANNEL FET with 900V DS breakdown voltage, ideal for SWITCHING applications. Features include 27A IDM, 778mJ EAS, and 150W power dissipation. Its METAL-OXIDE SEMICONDUCTOR technology ensures reliable performance in ENHANCEMENT MODE operation at up to 150°C.
2SK3878(F)
Toshiba's 2SK3878(F) is a N-CHANNEL Power FET with 9A max drain current and 150W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
2SK3868
Toshiba's 2SK3868 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A IDM and 180mJ EAS, operating in ENHANCEMENT MODE. The transistor has a max power dissipation of 35W and an on-resistance of 1.7 ohm, suitable for high-power circuit designs.
2SK3920-01
Fuji Electric
Fuji Electric's 2SK3920-01 is a N-channel power FET with 120V DS breakdown voltage, ideal for switching applications. It features a max IDM of 268A and EAS of 719.1mJ, operating in enhancement mode at up to 150°C. The transistor has a single configuration with built-in diode and can handle a max ID of 67A.
2SK3667
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
2SK3569
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 363 mJ; Transistor Element Material: SILICON; Qualification: Not Qualified;
2SK3497(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
2SK3176(F)
2SK3176
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 30 A; Package Style (Meter): FLANGE MOUNT;
2SK3050TL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Package Shape: RECTANGULAR; Terminal Finish: TIN COPPER;
2SK3397
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V;
2SK3756(TE12L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 1 A; Maximum Operating Temperature: 150 Cel;
2SK385
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain-Source On Resistance: .6 ohm; Case Connection: DRAIN; No. of Elements: 1;
2SK3466(TE24L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 5 A;
2SK3473
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 900 V;
2SK3565
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified;
2SK3662
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Package Style (Meter): FLANGE MOUNT; Transistor Application: SWITCHING;
2SK3767
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Case Connection: ISOLATED; Transistor Element Material: SILICON;
2SK3279TP-FA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved