Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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NDD60N745U1-1G
Onsemi
NDD60N745U1-1G by Onsemi is a N-channel Power FET with 6.8A max drain current and 83W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features metal-oxide semiconductor technology. Suitable for various industrial and automotive uses due to its robust design and high performance capabilities.
SINGLE
6.8 A
METAL-OXIDE SEMICONDUCTOR
e3
3
1
150 Cel
260
N-CHANNEL
83 W
FET General Purpose Power
NO
TIN
30
NDD60N900U1-1G
NDD60N900U1-1G by Onsemi is a N-channel FET with 5.9A max drain current and 74W power dissipation. Ideal for power applications, it operates up to 150°C, making it suitable for high-temperature environments requiring efficient power management.
5.9 A
74 W
NDD60N900U1T4G
NDD60N900U1T4G by Onsemi is an N-CHANNEL FET with 5.9A max drain current and 74W max power dissipation. Ideal for power applications, it operates at up to 150°C and features surface mount configuration for efficient installation in various electronic devices.
YES
BUK951R9-40E,127
NXP Semiconductors
BUK951R9-40E,127 by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with robust performance.
AVALANCHE RATED
1008 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
120 A
.00184 ohm
TO-220AB
R-PSFM-T3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
349 W
1257 A
AEC-Q101; IEC-60134
Tin (Sn)
THROUGH-HOLE
SWITCHING
SILICON
BUK9E3R2-40E,127
BUK9E3R2-40E,127 from NXP Semiconductors is an N-channel power FET designed for switching applications. It features a max drain current of 100 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in automotive systems.
419 mJ
100 A
.0032 ohm
TO-262AA
R-PSIP-T3
IN-LINE
234 W
781 A
BUK761R4-30E,118
NXP Semiconductors BUK761R4-30E,118 is a N-channel FET with 30V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 1425A pulsed drain current, and 324W power dissipation in a small outline package.
1096 mJ
30 V
.00145 ohm
R-PSSO-G2
2
SMALL OUTLINE
245
324 W
1425 A
GULL WING
BUK951R6-30E,127
BUK951R6-30E,127 from NXP is an N-channel power FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in automotive systems.
1405 mJ
.0016 ohm
1400 A
BUK9E6R1-100E,127
BUK9E6R1-100E,127 from NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 100 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
387 mJ
100 V
.0061 ohm
576 A
BUK9E1R9-40E,127
BUK9E1R9-40E,127 from NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with built-in diode functionality.
.00193 ohm
1228 A
BUK7E4R0-80E,127
NXP Semiconductors' BUK7E4R0-80E,127 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 758A IDM and 349W Pd max. The transistor operates in ENHANCEMENT MODE with 0.004 ohm RDS(on) and can handle up to 175°C temperature.
488 mJ
80 V
.004 ohm
758 A
PSMN8R5-108ESQ
PSMN8R5-108ESQ by NXP is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 108 V, and a low on-resistance of 0.0085 Ω. Ideal for high-power circuits, it operates at up to 175 °C.
219 mJ
108 V
.0085 ohm
263 W
429 A
IEC-60134
BUK761R5-40EJ
BUK761R5-40EJ by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with minimal resistance.
.00151 ohm
BSP324L6327HTSA1
Infineon Technologies
Infineon's BSP324L6327HTSA1 is a N-CHANNEL FET with 400V DS breakdown voltage, ideal for switching applications. It features a built-in diode, 25 ohm RDS(on), and operates in enhancement mode. With AEC-Q101 standard compliance, it offers fast turn-on/off times and low feedback capacitance for efficient performance in automotive electronics.
LOGIC LEVEL COMPATIBLE
400 V
.17 A
25 ohm
5.7 pF
R-PDSO-G4
4
-55 Cel
NOT SPECIFIED
1.8 W
.68 A
AEC-Q101
DUAL
127 ns
13.5 ns
AOTF4S60
Alpha & Omega Semiconductor
AOTF4S60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 600V DS Breakdown Voltage. It has a max IDM of 16A and 0.9 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation, it comes in a RECTANGULAR package style suitable for FLANGE MOUNTing.
77 mJ
ISOLATED
600 V
4 A
.9 ohm
16 A
BUK7E1R6-30E,127
NXP Semiconductors BUK7E1R6-30E,127 is a N-channel Power FET with 30V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 1408A pulsed drain current, and 349W power dissipation in a plastic/epoxy package.
1408 A
BUK962R1-40E,118
NXP Semiconductors' BUK962R1-40E,118 is an N-channel Power FET with 40V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 622mJ avalanche energy rating, and 0.0021 ohm max on-resistance. Suitable for enhancement mode operation in high-power systems with a max power dissipation of 293W at 175°C operating temperature.
622 mJ
.0021 ohm
293 W
1078 A
BUK9E2R3-40E,127
BUK9E2R3-40E,127 from NXP Semiconductors is an N-channel power FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in automotive systems.
.0025 ohm
988 A
BUK961R7-40E,118
BUK961R7-40E,118 by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with its built-in diode and low on-resistance.
801 mJ
.0017 ohm
1260 A
PMPB20UN,115
PMPB20UN,115 by NXP Semiconductors is an N-channel FET designed for efficient switching applications. It features a max drain current of 6.6 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
20 V
6.6 A
.025 ohm
S-PDSO-N6
6
SQUARE
12.5 W
27 A
NO LEAD
BSP300L6327HUSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 36 mJ; Package Body Material: PLASTIC/EPOXY;
36 mJ
800 V
.19 A
20 ohm
.76 A
MATTE TIN
AOD409
AOD409 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 26A Max Drain Current, 0.055 ohm Max RDS(ON), and 60A IDM. The PLASTIC/EPOXY package with GULL WING terminals makes it suitable for ENHANCEMENT MODE operation in surface mount designs.
60 V
26 A
.055 ohm
TO-252
P-CHANNEL
60 A
HTMN5130SSD-13
Diodes Incorporated
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Reference Standard: AEC-Q101;
HIGH RELIABILITY
89 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
55 V
2.6 A
.13 ohm
R-PDSO-G8
8
8 A
IPB100N04S303ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 400 A; Maximum Drain-Source On Resistance: .0028 ohm; Package Body Material: PLASTIC/EPOXY;
ULTRA LOW RESISTANCE
898 mJ
.0028 ohm
TO-263AB
400 A
IPB100N06S2L05ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Additional Features: LOGIC LEVEL COMPATIBLE; Minimum DS Breakdown Voltage: 55 V;
810 mJ
.0056 ohm
IPB120P04P404ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 40 V; Avalanche Energy Rating (EAS): 78 mJ; No. of Elements: 1;
78 mJ
.0035 ohm
480 A
IPB120P04P4L03ATMA1
Infineon's IPB120P04P4L03ATMA1 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 120A ID, and 0.0052 ohm RDS(on). Ideal for power applications in small outline packages.
.0052 ohm
IPB160N04S3H2ATMA1
Infineon's IPB160N04S3H2ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A ID, and 0.0021 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
160 A
TO-263
R-PSSO-G6
640 A
IPB180N04S302ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ULTRA LOW RESISTANCE; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE;
1880 mJ
180 A
.0015 ohm
720 A
IPB180P04P403ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Terminal Position: SINGLE;
90 mJ
IPB180P04P4L02ATMA1
Infineon's IPB180P04P4L02ATMA1 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 0.0039 ohm RDS(on), and 180A ID. Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 720A IDM and 84mJ EAS ratings.
84 mJ
.0039 ohm
IPB22N03S4L15ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 30 V;
20 mJ
22 A
.0146 ohm
88 A
IPB45N04S4L08ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 2;
55 mJ
45 A
.0076 ohm
IPB47N10S33ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 188 A; Terminal Form: GULL WING;
400 mJ
47 A
.033 ohm
188 A
IPB47N10SL26ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.04 ohm
IPB70N04S406ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 40 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
72 mJ
70 A
.0062 ohm
280 A
IPB70N10SL16ATMA1
Infineon's IPB70N10SL16ATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.025 ohm RDS(on), and 280A IDM. Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a 700mJ EAS rating.
700 mJ
IPB70P04P409ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Finish: Tin (Sn); Package Style (Meter): SMALL OUTLINE;
24 mJ
72 A
.0094 ohm
288 A
IPB77N06S212ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 308 A; Maximum Drain Current (ID): 77 A; JEDEC-95 Code: TO-263AB;
280 mJ
77 A
.0117 ohm
308 A
IPB80N03S4L02ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ULTRA LOW RESISTANCE; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-263AB;
260 mJ
80 A
.0024 ohm
320 A
IPB80N04S303ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 320 A; Case Connection: DRAIN; Package Body Material: PLASTIC/EPOXY;
526 mJ
IPB80N04S304ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSSO-G2;
290 mJ
.0042 ohm
IPB80N04S306ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: ULTRA LOW RESISTANCE; Maximum Pulsed Drain Current (IDM): 320 A;
125 mJ
.0054 ohm
IPB80N04S403ATMA1
Infineon's IPB80N04S403ATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage and 320A IDM. Ideal for power applications, it features 0.003 ohm max RDS(on) and 200mJ EAS rating. Suitable for enhancement mode operation in various electronic devices.
200 mJ
.003 ohm
IPB80N06S2H5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Transistor Element Material: SILICON; Case Connection: DRAIN;
IPB80N06S2L07ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Case Connection: DRAIN;
450 mJ
.0097 ohm
IPB80N06S2L09ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JEDEC-95 Code: TO-263AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
370 mJ
.011 ohm
IPB80N06S2L11ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0147 ohm; Minimum DS Breakdown Voltage: 55 V; Terminal Position: SINGLE;
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
.0147 ohm
IPB80P04P405ATMA1
Infineon's IPB80P04P405ATMA1 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 320A IDM, and 0.0049 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
64 mJ
.0049 ohm
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