Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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IPP80N06S209AKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Transistor Element Material: SILICON;
370 mJ
SINGLE WITH BUILT-IN DIODE
55 V
80 A
.0091 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
320 A
NO
THROUGH-HOLE
SINGLE
SILICON
IPP80N06S2LH5AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3;
LOGIC LEVEL COMPATIBLE
700 mJ
.0065 ohm
IPP80N06S405AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; JEDEC-95 Code: TO-220AB; Minimum DS Breakdown Voltage: 60 V;
152 mJ
DRAIN
60 V
.0057 ohm
e3
TIN
IPP80N06S407AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
71 mJ
.0071 ohm
NOT SPECIFIED
IPP80N06S4L05AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
.0048 ohm
IPP80N08S207AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 810 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
810 mJ
75 V
.0074 ohm
IPP80N08S2L07AKSA1
IPP80N08S2L07AKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 75V DS Breakdown Voltage, 320A IDM, and 0.0071 ohm RDS(on). It is commonly used in automotive applications due to its AEC-Q101 reference standard.
590 pF
175 Cel
-55 Cel
300 W
AEC-Q101
IPP80P03P4L04AKSA1
IPP80P03P4L04AKSA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.007 ohm RDS(on). Ideal for power applications due to its high current handling capability and low on-resistance. Suitable for use in various electronic devices requiring efficient power management.
410 mJ
30 V
.007 ohm
P-CHANNEL
IPP80P03P4L07AKSA1
IPP80P03P4L07AKSA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage and 320A IDM. Ideal for SWITCHING applications, it features 0.0072 ohm RDS(ON) and 135mJ EAS rating. The METAL-OXIDE SEMICONDUCTOR technology ensures high performance in ENHANCEMENT MODE operation.
135 mJ
.0072 ohm
SWITCHING
IPP90N06S404AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Terminal Position: SINGLE; JEDEC-95 Code: TO-220AB;
331 mJ
90 A
.004 ohm
360 A
IPP90N06S4L04AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .0034 ohm; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;
.0034 ohm
CSD19531KCS
Texas Instruments
CSD19531KCS by Texas Instruments is a N-CHANNEL power FET with a min DS breakdown voltage of 100V. It is designed for switching applications and has a max pulsed drain current of 285A.
AVALANCHE RATED
180 mJ
100 V
100 A
.0088 ohm
17 pF
TO-220
179 W
285 A
FET General Purpose Power
MATTE TIN
IPB65R225C7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 48 mJ; JESD-609 Code: e3;
48 mJ
650 V
11 A
.225 ohm
TO-252
R-PSSO-G2
2
SMALL OUTLINE
41 A
YES
GULL WING
IPI126N10N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 232 A; Terminal Form: THROUGH-HOLE;
70 mJ
58 A
.0126 ohm
TO-262AA
R-PSIP-T3
IN-LINE
232 A
IPP60R600P6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 18 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
133 mJ
600 V
.6 ohm
18 A
IPP65R045C7XKSA1
IPP65R045C7XKSA1 by Infineon Technologies is a N-CHANNEL FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max IDM of 212A and 0.045 ohm Drain-Source On Resistance. The transistor features a SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.
249 mJ
46 A
.045 ohm
212 A
IPP90R1K0C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PSFM-T3;
97 mJ
900 V
5.7 A
1 ohm
12 A
IPW60R190P6FKSA1
IPW60R190P6FKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, 0.19 ohm RDS(on), and 57A IDM. Ideal for switching applications, it features a built-in diode and operates in enhancement mode. The transistor's metal-oxide semiconductor technology ensures high performance in power electronics.
419 mJ
.19 ohm
TO-247
57 A
IPW65R019C7FKSA1
IPW65R019C7FKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a max IDM of 496A and 0.019 ohm RDS(on), making it ideal for SWITCHING applications. The transistor's METAL-OXIDE SEMICONDUCTOR technology and ENHANCEMENT MODE operation ensure efficient performance in various power electronics systems.
583 mJ
75 A
.019 ohm
496 A
IPZ65R045C7XKSA1
IPZ65R045C7XKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a max IDM of 212A and 0.045 ohm RDS(on), suitable for SWITCHING applications. The transistor has a SILICON element, operates in ENHANCEMENT MODE, and comes in a RECTANGULAR package with THROUGH-HOLE terminals.
R-PSFM-T4
4
SPD30N03S2L07GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 250 mJ; Operating Mode: ENHANCEMENT MODE;
250 mJ
30 A
.0098 ohm
120 A
SPD30N03S2L10GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-252; Terminal Finish: TIN;
150 mJ
.0146 ohm
SPD30N03S2L20GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 30 A;
.031 ohm
SPD50N03S207GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
50 A
.0073 ohm
TO-252AA
200 A
SPD50N03S2L06GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 250 mJ; Package Body Material: PLASTIC/EPOXY;
.0092 ohm
SPI07N65C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Pulsed Drain Current (IDM): 21.9 A; Avalanche Energy Rating (EAS): 230 mJ;
230 mJ
7.3 A
.0006 ohm
21.9 A
BSF035NE2LQXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 22 A; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 25 V;
50 mJ
25 V
22 A
.0046 ohm
R-MBCC-N3
e4
METAL
CHIP CARRIER
276 A
SILVER NICKEL
NO LEAD
BOTTOM
IPL65R340CFDAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104.2 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
290 mJ
10.9 A
.34 ohm
S-PSSO-N4
2A
150 Cel
-40 Cel
SQUARE
104.2 W
32 A
FQD9N25TM_F080
Fairchild Semiconductor
FQD9N25TM_F080 by Fairchild Semiconductor is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 7.4A Max Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a 0.42 ohm Max RDS(on) and 29.6A IDM rating for high-performance requirements.
165 mJ
250 V
7.4 A
.42 ohm
TO-252AB
260
29.6 A
30
BSO612CVGHUMA1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD SILVER; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
47 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
3 A
.12 ohm
R-PDSO-G8
8
N-CHANNEL AND P-CHANNEL
NICKEL PALLADIUM GOLD SILVER
DUAL
DDB2U50N08W1RB23BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Body Material: UNSPECIFIED; No. of Elements: 1; No. of Terminals: 9;
ISOLATED
COMPLEX
60 A
.2 ohm
R-XUFM-X9
9
UNSPECIFIED
UPPER
IPD30N03S2L07ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
ULTRA LOW RESISTANCE
IPB80N06S207ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 2; Reference Standard: AEC-Q101;
530 mJ
.0063 ohm
215 pF
TO-263AB
250 W
IPI80N06S207AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JEDEC-95 Code: TO-262AA; Package Style (Meter): IN-LINE;
.0066 ohm
SIR826ADP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR826ADP-T1-GE3 is a N-channel Power FET with 80V DS Breakdown Voltage and 100A IDM. Ideal for switching applications, it features 0.0059 ohm RDS(on) and 61mJ EAS rating. Suitable for surface mount, this MOSFET has a rectangular package shape with C bend terminals.
61 mJ
80 V
.0059 ohm
R-PDSO-C5
5
C BEND
NDD60N550U1-1G
Onsemi
NDD60N550U1-1G by Onsemi is a N-CHANNEL FET with 8.5A ID and 96W power dissipation. Ideal for high-power applications, it operates up to 150 °C with TIN finish, MSL level 3, and peak reflow temp of 260°C in METAL-OXIDE SEMICONDUCTOR technology.
8.5 A
96 W
NDD60N550U1T4G
NDD60N550U1T4G by Onsemi is an N-CHANNEL FET with 8.5A max drain current and 96W max power dissipation. Ideal for power applications, it operates at up to 150 °C and features surface mount configuration for easy installation.
BMS3004-1E
BMS3004-1E by Onsemi is a P-channel Power FET with 75V DS breakdown voltage, 272A IDM, and 0.0114 ohm max RDS(on). Ideal for applications requiring high drain current handling capabilities in enhancement mode operation. Package style: Flange mount, terminal finish: Matte Tin, and isolated case connection.
380 mJ
68 A
.0114 ohm
272 A
IPP60R380P6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Minimum Operating Temperature: -55 Cel; Moisture Sensitivity Level (MSL): 1;
210 mJ
10.6 A
.38 ohm
29 A
CSD19533KCS
CSD19533KCS by Texas Instruments is an N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 207A and EAS of 106mJ, making it suitable for high-power operations. With a low 0.0122 ohm RDS(on), this FET offers efficient performance in ENHANCEMENT MODE operation.
106 mJ
.0122 ohm
12.5 pF
188 W
207 A
STI34N65M5
STMicroelectronics
STI34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 112A max pulsed drain current and 0.11 ohm max drain-source resistance. This MOSFET operates in enhancement mode at up to 150 °C, making it suitable for high-power tasks.
510 mJ
28 A
.11 ohm
112 A
NTE2380
Nte Electronics
NTE2380 by Nte Electronics is a Power FET with 500V DS Breakdown Voltage, 10A IDM, and 75W Pd. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
500 V
2 A
2.5 A
3 ohm
75 W
10 A
Not Qualified
90 ns
100 ns
TPIC5403DW
TPIC5403DW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 11.25A Max Pulsed Drain Current, and 17.2mJ Avalanche Energy Rating. With a GULL WING terminal form and ENHANCEMENT MODE operation, it offers efficient power management in various electronic systems.
ESD PROTECTED
17.2 mJ
2.3 A
2.25 A
.27 ohm
75 pF
MS-013AD
R-PDSO-G24
24
1.39 W
1.4 W
11.25 A
65 ns
85 ns
TPIC5621LDW
TPIC5621LDW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 3A Max Pulsed Drain Current, and 18mJ Avalanche Energy Rating. With GULL WING terminals and ENHANCEMENT MODE operation, it offers fast switching capabilities in a SMALL OUTLINE package.
18 mJ
1 A
.48 ohm
50 pF
MS-013AC
R-PDSO-G20
6
20
1.389 W
82 ns
110 ns
TPIC5424LDW
TPIC5424LDW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 3A Pulsed Drain Current, and 0.48 ohm Drain-Source On Resistance. With a package style of SMALL OUTLINE, it operates in ENHANCEMENT MODE with max power dissipation of 1.4W at 150°C.
125 pF
132 ns
TPIC5302D
TPIC5302D by Texas Instruments is a N-CHANNEL FET with 3 elements and built-in diode, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 7A, Min DS Breakdown Voltage of 60V, and Avalanche Energy Rating of 10.5mJ. This small outline package has GULL WING terminals and operates in ENHANCEMENT MODE up to 150°C.
10.5 mJ
SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE
1.4 A
.35 ohm
40 pF
MS-012AC
R-PDSO-G16
16
1.087 W
.87 W
7 A
84 ns
56 ns
2SK1636STR-E
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 15 A;
15 A
2SK3575-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
83 A
105 W
10
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