Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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NTMFS4926NT3G
Onsemi
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Qualification: Not Qualified; Terminal Finish: TIN; Maximum Drain Current (Abs) (ID): 44 A; Moisture Sensitivity Level (MSL): 1;
44 A
e3
1
260
Not Qualified
FET General Purpose Power
TIN
30
NTMFS4934NT1G
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Drain Current (Abs) (ID): 147 A;
147 A
MATTE TIN
NTMFS4934NT3G
Power Field-Effect Transistors; Maximum Drain Current (Abs) (ID): 147 A; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; Qualification: Not Qualified;
MTD6N20ET5G
MTD6N20ET5G by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage and 18A IDM. Ideal for SWITCHING applications, it features a 0.7 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has GULL WING terminals and can withstand up to 150 °C operating temperature.
54 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
200 V
6 A
.7 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
2
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
18 A
YES
GULL WING
SINGLE
SWITCHING
SILICON
ZXMN2AMCTA
Diodes Incorporated
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
HIGH RELIABILITY
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
3.7 A
2.9 A
.12 ohm
R-PDSO-N8
e4
8
2.45 W
13 A
NICKEL PALLADIUM GOLD
NO LEAD
DUAL
ZXMN3AMCTA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; Additional Features: HIGH RELIABILITY; Maximum Operating Temperature: 150 Cel;
30 V
STP20NE06L
STMicroelectronics
STP20NE06L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 100mJ EAS, and 0.085 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 70W at 175 °C.
100 mJ
60 V
20 A
.085 ohm
TO-220AB
R-PSFM-T3
3
175 Cel
FLANGE MOUNT
70 W
80 A
NO
THROUGH-HOLE
STP4NB80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
230 mJ
800 V
4 A
3.3 ohm
100 W
16 A
STW80NE06-10
STW80NE06-10 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage, 320A IDM, and 0.01 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it has an EAS of 350mJ and can handle up to 180W power dissipation.
350 mJ
.01 ohm
TO-247
e0
180 W
320 A
TIN LEAD
STP80NE06-10
STP80NE06-10 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage and 80A max drain current. Ideal for switching applications, it features a built-in diode, 320A pulsed drain current, and 0.01 ohm max on-resistance. Suitable for enhancement mode operation in various power electronics systems.
250 mJ
150 W
STD30NE06LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 60 V;
30 A
.03 ohm
TO-252AA
55 W
120 A
STD30NE06L
STD30NE06L by STMicroelectronics is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has a max ID of 30A and 0.03 ohm Drain-Source On Resistance, suitable for SWITCHING applications. This SINGLE transistor in PLASTIC/EPOXY package features an ENHANCEMENT MODE and built-in DIODE, making it ideal for high-current operations.
FDB8860_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDB8860_F085 is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 31A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0027 ohm On Resistance, and operates in ENHANCEMENT MODE.
947 mJ
31 A
.0027 ohm
TO-263AB
254 W
SIR882DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR882DP-T1-GE3 is a N-channel Power FET with 100V DS breakdown voltage and 80A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0087 ohm max on-resistance, and operates in enhancement mode.
45 mJ
100 V
60 A
.0087 ohm
R-XDSO-C5
5
UNSPECIFIED
NOT SPECIFIED
83 W
C BEND
SUP85N03-3M6P-GE3
Vishay Intertechnology's SUP85N03-3M6P-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for switching applications, it features 0.0036 ohm RDS(on) and 101mJ EAS rating. Suitable for high-power operations in various electronic devices.
101 mJ
85 A
.0036 ohm
78.1 W
SPP47N10
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Pulsed Drain Current (IDM): 188 A; Maximum Operating Temperature: 175 Cel;
AVALANCHE RATED
400 mJ
47 A
.033 ohm
175 W
188 A
CPH6445-TL-W
CPH6445-TL-W by Onsemi is a N-CHANNEL FET with 3.5A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems or motor control circuits.
3.5 A
e6
1.6 W
TIN BISMUTH
SPU18P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Drain Current (ID): 18.6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
150 mJ
18.6 A
.13 ohm
TO-251
R-PSIP-T3
IN-LINE
P-CHANNEL
80 W
74.4 A
Other Transistors
SPD18P06P
Infineon's SPD18P06P is a P-CHANNEL FET with 60V DS Breakdown Voltage, 74.4A IDM, and 0.13 ohm RDS(on). Ideal for power applications, it operates in Enhancement Mode with 80W Power Dissipation and can handle up to 175°C.
TO-252
C2M0025120D
Wolfspeed
Wolfspeed C2M0025120D is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 250A max pulsed drain current, 0.034 ohm max RDS(on), and -55 to 150°C operating temperature range. Suitable for high-power systems requiring efficient and reliable performance.
1200 V
90 A
.034 ohm
-55 Cel
250 A
SILICON CARBIDE
DMN3053L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
.045 ohm
42 pF
R-PDSO-G3
1.2 W
35 A
BTS110NKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
10 A
.2 ohm
40 A
BTS113AE3064NKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
11.5 A
.17 ohm
46 A
IPB180N03S4L01ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
ULTRA-LOW RESISTANCE
530 mJ
180 A
.00105 ohm
TO-263
R-PSSO-G6
6
720 A
AEC-Q101
ZXMN4A06GQTA
ZXMN4A06GQTA by Diodes Inc. is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for switching applications. Features include single configuration with built-in diode, 22A max pulsed drain current, and 0.05 ohm max drain-source resistance. Suitable for enhancement mode operation in automotive (AEC-Q101) and military (MIL-STD-202) environments.
40 V
5 A
.05 ohm
60 pF
R-PDSO-G4
4
2 W
22 A
AEC-Q101; MIL-STD-202
CAS300M12BM2
CAS300M12BM2 by Wolfspeed is a N-CHANNEL FET with 1200V DS breakdown voltage. It features 2 elements with built-in diode for switching applications. Operating in enhancement mode, it has a max pulsed drain current of 1500A and 0.0567 ohm drain-source on resistance.
ISOLATED
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
.0567 ohm
113 pF
R-XUFM-X7
7
-40 Cel
1500 A
UPPER
DMP2006UFG-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Transistor Application: SWITCHING; No. of Elements: 1;
28 mJ
17.5 A
.0055 ohm
900 pF
S-PDSO-N5
SQUARE
41 W
370 ns
55 ns
DMP2006UFG-7
DMP2006UFG-7 by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 28mJ EAS, and 0.0055 ohm RDS(ON). Operating from -55 to 150 °C, it has a compact SQUARE package with NO LEAD terminals for surface mount assembly.
DMP2033UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Feedback Capacitance (Crss): 63 pF; Package Style (Meter): SMALL OUTLINE;
4.2 A
.065 ohm
63 pF
R-PDSO-G6
1.7 W
DMP3065LVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .042 ohm; Terminal Form: GULL WING;
.042 ohm
130 pF
MIL-STD-202
75 ns
32 ns
DMP3065LVT-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Reference Standard: MIL-STD-202; Maximum Operating Temperature: 150 Cel;
IXTN79N20
IXYS Corporation
IXTN79N20 by IXYS Corp is a N-CHANNEL FET with 200V DS Breakdown Voltage, 79A ID, and 0.025 ohm RDS. Ideal for SWITCHING applications due to its 340A IDM and 350W Pd capabilities. Package style is FLANGE MOUNT with SILICON element material and ENHANCEMENT MODE operation at up to 150°C.
79 A
.025 ohm
R-PUFM-X4
400 W
350 W
340 A
NICKEL
IXTH75N10
IXTH75N10 by IXYS Corp is a N-CHANNEL FET with 100V DS Breakdown Voltage, 75A ID, and 0.02 ohm RDS. It's used for SWITCHING applications due to its 300A IDM and 250W Pd. The PLASTIC/EPOXY package with THROUGH-HOLE terminals makes it suitable for various power electronics designs.
75 A
.02 ohm
TO-247AD
300 W
250 W
300 A
IXTN21N100
IXTN21N100 by IXYS Corp is a N-CHANNEL FET with 1000V DS breakdown voltage, 84A IDM, and 0.55 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with max power dissipation of 520W. The transistor features a single configuration with built-in diode and comes in a rectangular package shape.
1000 V
21 A
.55 ohm
520 W
84 A
NVMFS5833NT1G
NVMFS5833NT1G by Onsemi is a N-CHANNEL FET with 86A ID and 112W power dissipation. Ideal for high-power applications, it operates at up to 175 °C with surface mount configuration. Suitable for various industrial and automotive uses due to its robust metal-oxide semiconductor technology.
86 A
112 W
NVMFS5833NT3G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 112 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 30;
NVMFS5833NWFT1G
NVMFS5833NWFT1G by Onsemi is a single N-channel Power FET with 86A max drain current and 112W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching and thermal performance.
NVMFS5833NWFT3G
NVMFS5833NWFT3G by Onsemi is an N-CHANNEL FET with 86A max drain current and 112W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features a metal-oxide semiconductor technology. Suitable for surface mount configurations, this transistor is designed for robust performance in demanding environments.
NVTFS4C06NWFTAG
NVTFS4C06NWFTAG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 71A Drain Current, and 0.0061 ohm On Resistance. Ideal for automotive applications due to AEC-Q101 standard compliance, it operates in Enhancement Mode with 175°C max temperature and features a built-in diode.
34 mJ
71 A
.0061 ohm
S-PDSO-F5
37 W
367 A
Matte Tin (Sn) - annealed
FLAT
NVTFS4C06NWFTWG
NVTFS4C06NWFTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 367A IDM, and 0.0061 ohm RDS(on). It is an N-CHANNEL MOSFET suitable for automotive applications due to its AEC-Q101 reference standard certification.
NVTFS4C08NWFTAG
NVTFS4C08NWFTAG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 253A IDM, and 0.0059 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for automotive applications due to AEC-Q101 standard compliance.
20 mJ
55 A
.0059 ohm
31 W
253 A
NVTFS4C08NWFTWG
NVTFS4C08NWFTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 253A IDM, and 0.0059 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Operating in enhancement mode, it offers high power dissipation of 31W and can withstand temperatures from -55 to 175 °C.
IRF630FP
The STMicroelectronics IRF630FP is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 25W, this transistor has a 0.4 ohm Drain-Source On Resistance and can handle up to 9A drain current.
160 mJ
9 A
.4 ohm
25 W
36 A
VNB20N07
VNB20N07 by STMicroelectronics is an N-channel Power FET with 83W power dissipation. It operates in enhancement mode with 0.07 ohm on-resistance, making it suitable for high-power applications. The transistor features a fast turn-on time of 580ns and turn-off time of 1100ns, ideal for efficient switching operations.
COMPLEX
.07 ohm
1100 ns
580 ns
STP45NE06
STP45NE06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 180A IDM, 150mJ EAS, and 0.028 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with max temp of 175 °C, making it suitable for high-power circuits.
45 A
.028 ohm
STP4NB100
STP4NB100 by STMicroelectronics is a N-CHANNEL FET with 1000V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15.2A IDM, 360mJ EAS, and 125W Max Power Dissipation. Suitable for high-power ENHANCEMENT MODE operations in various electronic systems.
360 mJ
3.8 A
4.4 ohm
125 W
15.2 A
STW8NB100
STW8NB100 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 1000V breakdown voltage, 29.2A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
700 mJ
8 A
7.3 A
1.45 ohm
TO-247AC
190 W
29.2 A
STW11NB80
STW11NB80 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 11 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 190 W. Ideal for high-voltage circuits, it ensures reliable performance in demanding environments.
500 mJ
11 A
.8 ohm
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