Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STW20NB50
STMicroelectronics
STW20NB50 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 20A max drain current. It offers a low on-resistance of 0.25Ω and can handle up to 250W power dissipation. This versatile transistor operates efficiently in high-temperature environments up to 150 °C.
AVALANCHE RATED
1000 mJ
SINGLE WITH BUILT-IN DIODE
500 V
20 A
.25 ohm
METAL-OXIDE SEMICONDUCTOR
75 pF
TO-247AC
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
250 W
80 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
57 ns
IXFH32N50Q
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 1500 mJ;
1500 mJ
DRAIN
32 A
.16 ohm
TO-247AD
360 W
128 A
IXFN48N50U2
IXYS Corporation's IXFN48N50U2 is a N-CHANNEL FET with 500V DS breakdown voltage and 48A max drain current. Ideal for switching applications, it operates in enhancement mode with 192A pulsed drain current. The transistor features a built-in diode, 0.1 ohm max on-resistance, and can handle up to 520W power dissipation.
ISOLATED
48 A
.1 ohm
R-PUFM-X4
4
520 W
192 A
NICKEL
UNSPECIFIED
UPPER
IXFK55N50
IXYS Corporation's IXFK55N50 is a N-CHANNEL FET with 500V DS breakdown voltage and 55A max drain current. Ideal for switching applications, it features a built-in diode, 220A pulsed drain current, and 0.09 ohm max on resistance.
55 A
.09 ohm
TO-264AA
NOT SPECIFIED
560 W
220 A
IXFN80N50
IXYS Corporation's IXFN80N50 is a N-CHANNEL FET with 500V DS breakdown voltage and 320A IDM. Ideal for switching applications, it has a max power dissipation of 700W, 0.055 ohm RDS(on), and operates in the -55 to 150 °C temperature range.
6000 mJ
.055 ohm
-55 Cel
700 W
320 A
STN2NE10L
STN2NE10L by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 7.2A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and 20mJ EAS rating. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount with DUAL terminal position.
LOW THRESHOLD
20 mJ
100 V
2 A
1.8 A
.45 ohm
R-PDSO-G4
SMALL OUTLINE
2.5 W
7.2 A
YES
GULL WING
DUAL
STP7NB60
STP7NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage and 28.8A pulsed drain current, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode at max 150 °C temperature. With 1.2 ohm RDS(on) and 125W power dissipation, it offers reliable performance in various power electronics designs.
580 mJ
600 V
1.2 ohm
21 pF
TO-220AB
125 W
28.8 A
39 ns
STP80NE03L-06
STP80NE03L-06 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.009 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
600 mJ
30 V
.009 ohm
700 pF
175 Cel
150 W
405 ns
STP3NB100
STP3NB100 by STMicroelectronics is a N-CHANNEL FET with 1000V DS breakdown voltage, 12A IDM, and 244mJ EAS. Ideal for switching applications due to its single configuration with built-in diode and 6Ω RDS(on). Operating in enhancement mode, it can handle up to 100W power dissipation at a max temp of 150 °C.
244 mJ
1000 V
3 A
6 ohm
100 W
12 A
STB50NE10T4
STB50NE10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 200A IDM, and 0.027 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
300 mJ
50 A
.027 ohm
TO-263AB
R-PSSO-G2
2
200 A
STB80NE03L-06T4
STB80NE03L-06T4 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 80A max drain current, and 0.008 ohm RDS(on). Ideal for switching applications, it features a built-in diode and operates in enhancement mode. Package: PLASTIC/EPOXY, GULL WING terminals, and small outline style.
.008 ohm
STE26NA90
STE26NA90 by STMicroelectronics is a N-CHANNEL Power FET with 900V DS Breakdown Voltage and 26A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 104A Pulsed Drain Current, and operates in ENHANCEMENT MODE.
3000 mJ
900 V
26 A
.3 ohm
R-XUFM-X4
450 W
104 A
UL RECOGNIZED
IRLML6402TR
International Rectifier
IRLML6402TR by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a built-in diode, making it suitable for various power management tasks.
HIGH RELIABILITY
11 mJ
20 V
3.7 A
.065 ohm
TO-236AB
R-PDSO-G3
e0
P-CHANNEL
1.3 W
22 A
Other Transistors
TIN LEAD
BSP613P
Infineon Technologies
BSP613P by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 11.6A and an avalanche energy rating of 150mJ. With a 0.13 ohm max drain-source resistance, this MOSFET operates in enhancement mode at up to 150°C, making it suitable for high-power applications.
150 mJ
60 V
2.9 A
.13 ohm
1.8 W
11.6 A
TIN
STN1N20
STN1N20 by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 200V DS Breakdown Voltage, 4A IDM, and 10mJ EAS. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 2.9W in a SMALL OUTLINE package suitable for surface mount assembly.
10 mJ
200 V
1 A
1.5 ohm
2.9 W
4 A
STP12PF06
STP12PF06 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 48A IDM, 200mJ EAS, and 0.2 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W at 175°C.
200 mJ
.2 ohm
60 W
STN2NE10
STN2NE10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 8A IDM, 20mJ EAS, and 0.4 ohm RDS(on). With a max operating temperature of 150 °C, it's suitable for various power management tasks in electronic devices.
.4 ohm
8 A
STS3DNE60L
STS3DNE60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 12A IDM and 0.1 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for high-power circuits.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-PDSO-G8
e4
8
2 W
NICKEL PALLADIUM GOLD
STS12NF30L
STS12NF30L by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, 48A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in diode and operates at up to 150 °C.
.011 ohm
260
Nickel/Palladium/Gold (Ni/Pd/Au)
30
STW15NB50
STW15NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for SWITCHING applications. It features 58.4A max pulsed drain current and 850mJ avalanche energy rating. Operating in enhancement mode, it has a max power dissipation of 190W and can handle up to 150 °C operating temperature.
850 mJ
14.6 A
.36 ohm
190 W
58.4 A
IRF640FP
STMicroelectronics' IRF640FP is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A Max Pulsed Drain Current, 280mJ Avalanche Energy Rating, and 0.18 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 40W at 150 °C.
280 mJ
18 A
.18 ohm
40 W
72 A
STH15NB50FI
STH15NB50FI by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 58.4A IDM, 850mJ EAS, and 0.36 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 80W and can handle up to 150 °C.
10.5 A
80 W
SPB18P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Additional Features: AVALANCHE RATED; Package Shape: RECTANGULAR;
151 mJ
18.6 A
18.7 A
220
74.8 A
STB10N60M2
STB10N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 30A IDM, 110mJ EAS, and 0.6 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 85W and operates b/w -55 to 150 °C.
110 mJ
7.5 A
.6 ohm
.84 pF
85 W
30 A
FQA19N20L
Fairchild Semiconductor
FQA19N20L by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 100A and EAS of 250mJ, making it suitable for high-power operations. With a 0.14 ohm RDS(on), this MOSFET offers efficient performance in ENHANCEMENT MODE at up to 150°C.
250 mJ
23 A
25 A
.14 ohm
100 A
IPZ65R095C7
IPZ65R095C7 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 24A ID. Ideal for SWITCHING applications, it features a built-in diode, 100A IDM, and 0.095 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 128W and can withstand temperatures from -55 to 150 °C.
118 mJ
650 V
24 A
.095 ohm
TO-247
R-PSFM-T4
128 W
FDP4020P
FDP4020P by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 16A Drain Current, and 0.08 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 37.5W. The transistor operates at up to 175°C and has a package style of FLANGE MOUNT.
16 A
.08 ohm
37.5 W
R6002ENDTL
ROHM
ROHM R6002ENDTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 4A IDM, 6mJ EAS, and 3.4Ω max RDS(on). Its GULL WING terminals and ENHANCEMENT MODE operation make it suitable for surface mount designs requiring high drain current capabilities.
6 mJ
1.7 A
3.4 ohm
10
SQP90P06-07L_GE3
Vishay Intertechnology
Vishay Intertechnology's SQP90P06-07L_GE3 is a P-channel Power FET with 60V DS breakdown voltage and 120A max drain current. Ideal for applications requiring high power handling, such as industrial motor control systems or automotive power management. Features include single configuration with built-in diode and 0.0067 ohm max on-resistance.
320 mJ
120 A
.0067 ohm
480 A
FDZ5047N
Fairchild Semiconductor's FDZ5047N is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM and 0.0029 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package has a RECTANGULAR shape with BALL terminals, making it suitable for surface mount installations.
.0029 ohm
R-PBGA-B36
36
GRID ARRAY
2.8 W
75 A
BALL
BOTTOM
STP6NC60
STP6NC60 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 6A max drain current, and 125W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
6 A
STS11NF30L
STS11NF30L by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a max drain current of 11 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
11 A
.019 ohm
44 A
IRF7901D1
IRF7901D1 by International Rectifier is an N-CHANNEL FET for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 24A, and max operating temperature of 150°C. With a package style of small outline and surface mount capability, it offers efficient power management in various electronic devices.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
6.2 A
.038 ohm
MS-012AA
IRFR13N20DTRL
IRFR13N20DTRL by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 52A and EAS of 130mJ, operating in ENHANCEMENT MODE at up to 175°C. This PLASTIC/EPOXY transistor has a 0.235 ohm Drain-Source On Resistance and can handle up to 110W power dissipation.
130 mJ
13 A
.235 ohm
TO-252AA
240
110 W
52 A
Tin/Lead (Sn/Pb)
IRFR13N20DTR
IRFR13N20DTR by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A Max Pulsed Drain Current and 0.235 ohm Max Drain-Source On Resistance. With a package style of SMALL OUTLINE, it operates at up to 175°C and has a power dissipation of 110W.
NDT451ANJ23Z
Fairchild Semiconductor's NDT451ANJ23Z is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 25A Max Pulsed Drain Current, and 0.035 ohm Max Drain-Source Resistance. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 3W at 150°C.
.035 ohm
3 W
IRF7901D1TR
IRF7901D1TR by International Rectifier is an N-CHANNEL FET with 2 SERIES CONNECTED elements and a built-in diode. It operates in ENHANCEMENT MODE for SWITCHING applications, with a Max Pulsed Drain Current of 24A. This PLASTIC/EPOXY package has GULL WING terminals and can handle up to 150°C operating temperature.
IPA65R190C7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 57 mJ; Maximum Drain-Source On Resistance: .19 ohm; Package Body Material: PLASTIC/EPOXY;
57 mJ
.19 ohm
49 A
APT40SM120B
Microsemi
Microsemi's APT40SM120B is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 100A max pulsed drain current and 0.1 ohm max drain-source resistance. Suitable for enhancement mode operation in various power electronics systems.
2500 mJ
1200 V
41 A
SILICON CARBIDE
BSO215C
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PDSO-G8;
LOGIC LEVEL
26 mJ
N-CHANNEL AND P-CHANNEL
14.8 A
BSO612CV
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 3 A; JESD-30 Code: R-PDSO-G8;
47 mJ
.12 ohm
235
BSO613SPV
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; JESD-30 Code: R-PDSO-G8; Peak Reflow Temperature (C): 235;
3.44 A
13.8 A
STD5NM50T4
STD5NM50T4 by STMicroelectronics is an N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features a max IDM of 30A and EAS of 300mJ, operating in enhancement mode. With a package style of small outline and matte tin terminal finish, it offers high power dissipation up to 50W at a max temp of 150°C.
5 A
.8 ohm
50 W
STB55NF03LT4
STB55NF03LT4 by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a max drain current of 55 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOGIC LEVEL COMPATIBLE
.02 ohm
STB70NFS03LT4
STB70NFS03LT4 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 70 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
500 mJ
70 A
.0095 ohm
245
280 A
Matte Tin (Sn) - annealed
STB80NF03L-04T4
STB80NF03L-04T4 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 80A max drain current, and 0.0055 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 320A pulsed drain current. Package style is small outline with gull wing terminals.
2300 mJ
.0055 ohm
300 W
STD40NF03LT4
STD40NF03LT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 40 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
40 A
55 W
160 A
STP70NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Terminal Finish: Matte Tin (Sn); Terminal Position: SINGLE;
Matte Tin (Sn)
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