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NDT451ANJ23Z

Fairchild Semiconductor

NDT451ANJ23Z by Fairchild Semiconductor

Fairchild Semiconductor's NDT451ANJ23Z is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 25A Max Pulsed Drain Current, and 0.035 ohm Max Drain-Source Resistance. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 3W at 150°C.

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Overview

Experience the power of innovation with the NDT451ANJ23Z by Fairchild Semiconductor, a leading manufacturer in the industry. This Power Field Effect Transistor (FET) is designed for switching applications, offering enhanced performance and reliability. With its N-CHANNEL polarity, SINGLE configuration with built-in diode, and high-quality construction using metal-oxide semiconductor technology, this transistor ensures optimal efficiency and durability. Whether you're looking to optimize your electronic projects or enhance your systems, the NDT451ANJ23Z delivers unmatched value and benefits that meet and exceed your expectations. Choose Fairchild Semiconductor for cutting-edge technology that empowers your success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance and efficiency compared to P-channel FETs, making them a popular choice for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps with protection against reverse voltage and ensures safe operation of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can efficiently turn on and off high current loads.

Surface Mount: YES

The surface mount capability makes it easy to integrate this FET into compact electronic devices and circuit boards.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltages without experiencing breakdown or damage.

Maximum Pulsed Drain Current (IDM): 25 A

The high pulsed drain current rating of 25A allows this FET to handle sudden surges of current without issues.

Maximum Drain Current (Abs) (ID): 7.2 A

The maximum drain current rating of 7.2A ensures that the FET can safely handle the current requirements of the application.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3W, this FET can effectively dissipate heat during operation, preventing thermal damage.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the FET to be used in a wide range of environments and conditions.

Technical Specifications

Power Field Effect Transistors (FET) NDT451ANJ23Z attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

7.2 A

Maximum Drain Current (ID):

7.2 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

3 W

Maximum Pulsed Drain Current (IDM):

25 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDT451ANJ23Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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