Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STB80NF03L-04-1
STMicroelectronics
STB80NF03L-04-1 by STMicroelectronics is a N-channel Power FET with 30V DS breakdown voltage, 320A IDM, and 0.0055 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 300W and can handle up to 80A drain current.
2300 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
80 A
.0055 ohm
METAL-OXIDE SEMICONDUCTOR
TO-262AA
R-PSIP-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
N-CHANNEL
300 W
320 A
Not Qualified
FET General Purpose Power
NO
Matte Tin (Sn)
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STD7NS20T4
STD7NS20T4 by STMicroelectronics is an N-CHANNEL FET for SWITCHING applications. It features a 200V DS Breakdown Voltage, 28A Max Pulsed Drain Current, and 0.4 ohm Max Drain-Source On Resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 150 °C.
60 mJ
200 V
7 A
.4 ohm
TO-252AA
R-PSSO-G2
2
150 Cel
SMALL OUTLINE
260
45 W
28 A
YES
Matte Tin (Sn) - annealed
GULL WING
30
STB40NF10T4
STB40NF10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 200A IDM, and 0.028 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
150 mJ
100 V
40 A
50 A
.028 ohm
TO-263AB
245
150 W
200 A
STB70NF03LT4
STB70NF03LT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 70A Drain Current, and 0.0095 ohm On Resistance. Ideal for SWITCHING applications, it features a 280A Pulsed Drain Current and 175 °C Max Operating Temp in a PLASTIC/EPOXY package.
500 mJ
70 A
.0095 ohm
100 W
280 A
STB70NF3LLT4
STB70NF3LLT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 280A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications due to its 100W Pdiss, ENHANCEMENT MODE operation, and built-in DIODE. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount.
MATTE TIN
STD17NF03L-1
STD17NF03L-1 by STMicroelectronics is a N-channel Power FET with 30V DS Breakdown Voltage and 68A IDM. Ideal for switching applications, it features a built-in diode, 0.06 ohm RDS(on), and 20W Pdiss. Suitable for enhancement mode operation in various electronic devices.
200 mJ
17 A
.06 ohm
TO-251AA
20 W
68 A
STD40NF3LLT4
STD40NF3LLT4 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 160A Pulsed Drain Current, and 55W Power Dissipation in a RECTANGULAR package.
LOGIC LEVEL COMPATIBLE
850 mJ
.011 ohm
55 W
160 A
IRLML5203
International Rectifier
IRLML5203 by International Rectifier is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features 24A IDM and 0.098 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a PLASTIC/EPOXY body, GULL WING terminals, and built-in DIODE.
3 A
.098 ohm
R-PDSO-G3
e0
P-CHANNEL
1.25 W
24 A
Other Transistors
TIN LEAD
DUAL
NTMFS4935NT3G
Onsemi
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Qualification: Not Qualified; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;
93 A
NTMFS4936NT1G
NTMFS4936NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 235A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.0055 ohm RDS(on), and 96.8mJ EAS rating. Operating in ENHANCEMENT MODE, this MOSFET has a max power dissipation of 43W and can handle up to 11.6A ID current.
96.8 mJ
79 A
11.6 A
R-XDSO-F5
5
UNSPECIFIED
43 W
235 A
FLAT
NTMFS4937NT1G
NTMFS4937NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 210A IDM, and 0.007 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, 43W power dissipation, and operates in ENHANCEMENT MODE. Suitable for high-power electronics requiring efficient switching capabilities.
68.5 mJ
17.1 A
10.2 A
.007 ohm
210 A
NTMFS4937NT3G
NTMFS4937NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 210A IDM, and 0.007 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
TIN
NTMFS4939NT1G
NTMFS4939NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 159A IDM. Ideal for SWITCHING applications, it features 0.008 ohm RDS(ON) and 48mJ EAS rating.
48 mJ
53 A
9.3 A
.008 ohm
NOT SPECIFIED
30 W
159 A
NTMFS4939NT3G
NTMFS4939NT3G by Onsemi is an N-CHANNEL FET with a 30V DS Breakdown Voltage and 159A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.008 ohm RDS(on), and operates in ENHANCEMENT MODE.
Tin (Sn)
NTMFS4941NT1G
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 47 A;
47 A
NTMFS4943NT3G
NTMFS4943NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 125A IDM and 0.011 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. This RECTANGULAR package with DUAL terminals is designed for high-power efficiency in various electronic systems.
31 mJ
8.3 A
125 A
NTMFS4945NT1G
NTMFS4945NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 0.013 ohm RDS(ON). Ideal for SWITCHING applications, it has 104A IDM and 26.5mJ EAS ratings. This SINGLE FET in SMALL OUTLINE package features ENHANCEMENT MODE operation and DUAL terminal position with built-in DIODE.
26.5 mJ
7.4 A
.013 ohm
104 A
STB4N62K3
STB4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 15.2A IDM, and 70W Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C, featuring a built-in DIODE and GULL WING terminals.
620 V
3.8 A
1.95 ohm
70 W
15.2 A
STF4N62K3
STF4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 15.2A Max Pulsed Drain Current and 25W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
ISOLATED
TO-220AB
R-PSFM-T3
FLANGE MOUNT
25 W
STI4N62K3
STI4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS breakdown voltage, ideal for switching applications. It features 15.2A max pulsed drain current and 70W power dissipation, operating in enhancement mode at up to 150 °C.
STL12N65M5
STL12N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 7.2A Max Pulsed Drain Current and 150mJ Avalanche Energy Rating, operating in ENHANCEMENT MODE at up to 150 °C.
650 V
8.5 A
1.8 A
.43 ohm
S-PSSO-N4
4
SQUARE
7.2 A
NO LEAD
STL18N55M5
STL18N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 9.6A Pulsed Drain Current, 200mJ Avalanche Energy Rating, and 0.24 ohm On Resistance. Suitable for high-power circuits requiring efficient switching capabilities in a compact SQUARE package.
550 V
13 A
2.4 A
.24 ohm
90 W
9.6 A
STL60N3LLH5
STL60N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 68A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 60W.
120 mJ
60 A
R-PDSO-N5
60 W
STL75N3LLZH5
STL75N3LLZH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS breakdown voltage, 76A IDM, and 0.0078 ohm RDS(on). Ideal for SWITCHING applications due to its 60W power dissipation, ENHANCEMENT MODE operation, and DUAL terminal position.
75 A
19 A
.0078 ohm
76 A
STP260N6F6
STP260N6F6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Drain Current, 0.003 ohm On Resistance, and 300W Power Dissipation in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it has a max temperature of 175 °C and is suitable for high-power electronic systems.
60 V
120 A
.003 ohm
480 A
STP4N62K3
STP4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 15.2A Max Pulsed Drain Current and 70W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
STQ3N45K3-AP
STQ3N45K3-AP by STMicroelectronics is a N-CHANNEL FET with 450V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.4A Max Pulsed Drain Current and 3.8 ohm Max RDS(on), operating in ENHANCEMENT MODE at up to 150 °C.
450 V
.6 A
3.8 ohm
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
2.5 W
BOTTOM
STU3N45K3
STU3N45K3 by STMicroelectronics is a N-CHANNEL FET with 450V DS Breakdown Voltage, suitable for SWITCHING applications. It features 7.2A Max Pulsed Drain Current and 27W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
TO-251
27 W
SPD30N06S2-15
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE;
AVALANCHE RATED
240 mJ
55 V
30 A
.0147 ohm
TO-252
125 W
SPD30N06S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: TIN LEAD; Package Shape: RECTANGULAR;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.017 ohm
SPD30N06S2L-23
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; JESD-609 Code: e0; JESD-30 Code: R-PSSO-G2;
.03 ohm
80 W
SPD30N08S2-22
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 120 A; Maximum Drain-Source On Resistance: .0215 ohm;
75 V
.0215 ohm
SPD30N08S2L-21
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PSSO-G2;
.026 ohm
SPD04N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Drain Current (Abs) (ID): 4.5 A; Transistor Application: SWITCHING;
AVALANCHE RATED, HIGH VOLTAGE
130 mJ
600 V
4.5 A
.95 ohm
50 W
9 A
SPD07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 600 V;
230 mJ
7.3 A
.6 ohm
-55 Cel
83 W
14.6 A
SPD09P06PL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
70 mJ
9.7 A
.25 ohm
42 W
38.8 A
SPD30P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain-Source On Resistance: .075 ohm; Qualification: Not Qualified;
250 mJ
.075 ohm
SPU07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Terminal Position: SINGLE; Maximum Drain Current (ID): 7.3 A;
SPU09P06PL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
SPU30P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 60 V;
STP22NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
22 A
88 A
STP35NF10
STP35NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.035 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 100W.
300 mJ
35 A
.035 ohm
STP40NS15
STP40NS15 by STMicroelectronics is a N-CHANNEL FET with 150V DS Breakdown Voltage, 40A Max ID, and 0.052 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 160A IDM and 140W Pd.
150 V
.052 ohm
140 W
NVMFS5C604NLT3G
NVMFS5C604NLT3G by Onsemi is a N-CHANNEL FET with 287A ID, 200W power dissipation, and 175 °C max operating temp. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
287 A
200 W
NVMFS5C604NLWFT3G
NVMFS5C604NLWFT3G by Onsemi is a N-CHANNEL FET with 287A max drain current and 200W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for industrial use in demanding environments.
STL34N65M5
STL34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 510mJ EAS, and 0.12 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 150W at 150 °C.
510 mJ
22.5 A
.12 ohm
6.3 pF
90 A
STL9P2UH7
STL9P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage, 36A IDM, and 0.085 ohm RDS(on). It is used for SWITCHING applications in small outline packages with 5 terminals.
20 V
.085 ohm
188 pF
S-PDSO-F5
2.9 W
36 A
STP315N10F7
STP315N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 720A IDM, and 0.0027 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at -55 to +150 °C.
1000 mJ
180 A
.0027 ohm
720 A
AEC-Q101
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