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STB40NF10T4

STMicroelectronics

STB40NF10T4 by STMicroelectronics

STB40NF10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 200A IDM, and 0.028 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.

Median Price

$1.232

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,006 parts In-Stock

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7,006

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Digiode

USA . 2,649 parts In-Stock

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2,649

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Anansix

USA . 1,431 parts In-Stock

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1,431

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Sunrise Surplus Inc.

USA . 740 parts In-Stock

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740

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Electronics Depot

USA . 670 parts In-Stock

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670

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R&J Components

USA . 545 parts In-Stock

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545

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ACDS - Activité Composants Distribution Service

France . 459 parts In-Stock

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459

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Bristol Electronics

USA . 459 parts In-Stock

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$1.232

1k+ parts

$1.010

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459

-

$1.232

$1.010

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Dan-Mar Components

USA . 459 parts In-Stock

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459

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Distributors (Availability)

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.899

100+ parts

$0.818

1k+ parts

$0.737

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-

450

$0.899

$0.818

$0.737

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IDEA Electronic Components Group

UK . 1,100 parts In-Stock

1+ parts

$1.533

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-

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$1.379

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1,100

$1.533

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$1.379

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MKK Technologies

India . 810 parts In-Stock

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$2.882

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810

$2.882

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DigiPath Technology Company

USA . 810 parts In-Stock

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$2.882

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810

$2.882

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AZTECH Wire

Italy . 408 parts In-Stock

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$18.020

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408

$18.020

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Semicontronic

India . 337 parts In-Stock

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$22.050

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$21.499

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$21.388

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337

$22.050

$21.499

$21.388

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Kepictronics

USA . 19,000 parts In-Stock

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Perfect Parts

USA . 11,169 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Alle Elektronik GmbH

Germany . 3,831 parts In-Stock

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3,831

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Corphita

USA . 1,973 parts In-Stock

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1,973

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Parana Technologies

USA . 1,034 parts In-Stock

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$1.833

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1,034

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$1.833

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Overview

Unleash the power of innovation with the STB40NF10T4 by STMicroelectronics. As a leading manufacturer in the field of Power Field Effect Transistors, STMicroelectronics delivers exceptional quality and reliability. Ideal for switching applications, this N-CHANNEL transistor offers a seamless performance with a maximum drain current of 50A and a low on-resistance of 0.028 ohms. With a maximum power dissipation of 150W, this transistor is designed to meet all your power management needs. Experience the efficiency and durability of STMicroelectronics products today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the FET, ensuring longevity and reliability in various applications.

Minimum DS Breakdown Voltage: 100 V

Suitable for high-voltage applications, allowing the FET to handle significant power levels without breakdown.

Maximum Drain Current (ID): 50 A

Capable of handling high current loads, making it ideal for power switching applications that require robust performance.

Maximum Power Dissipation (Abs): 150 W

Efficiently dissipates heat generated during operation, ensuring stable performance and preventing overheating.

Surface Mount: YES

Facilitates easy and convenient integration into circuit boards, saving space and simplifying assembly processes.

Technical Specifications

Power Field Effect Transistors (FET) STB40NF10T4 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

150 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

40 A

Maximum Drain Current (ID):

50 A

Maximum Drain-Source On Resistance:

.028 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

200 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STB40NF10T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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