Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STD30NF03LT4
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Peak Reflow Temperature (C): 260; Qualification: Not Qualified;
LOW THRESHOLD
100 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
30 A
.035 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
40 W
120 A
Not Qualified
FET General Purpose Power
YES
Matte Tin (Sn) - annealed
GULL WING
SINGLE
30
SWITCHING
SILICON
STE180NE10
STE180NE10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 360A and EAS of 720mJ. Operating in ENHANCEMENT MODE, this transistor has a max ID of 180A and RDS(on) of 6 ohm, making it suitable for high-power tasks.
AVALANCHE RATED
720 mJ
ISOLATED
100 V
180 A
6 ohm
R-PUFM-X4
4
150 Cel
-55 Cel
FLANGE MOUNT
360 W
360 A
NO
NICKEL
UNSPECIFIED
UPPER
SPN02N60S5
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Case Connection: DRAIN; JESD-30 Code: R-PDSO-G4;
HIGH VOLTAGE
50 mJ
600 V
.4 A
3 ohm
R-PDSO-G4
e0
255
1.8 W
2.2 A
TIN LEAD
DUAL
SPN03N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .7 A;
.7 A
1.4 ohm
3
3 A
MATTE TIN
SPP07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Minimum DS Breakdown Voltage: 600 V; Avalanche Energy Rating (EAS): 230 mJ;
230 mJ
7.3 A
.6 ohm
TO-220AB
R-PSFM-T3
NOT SPECIFIED
83 W
14.6 A
THROUGH-HOLE
STP60NF03L
STP60NF03L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
650 mJ
60 A
.015 ohm
100 W
240 A
STP6NB90
STP6NB90 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 900V breakdown voltage, 5.8A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
250 mJ
900 V
5.8 A
2 ohm
135 W
23 A
STP80NF55-06FP
STP80NF55-06FP by STMicroelectronics is a N-channel FET with 55V DS breakdown voltage, 240A IDM, and 0.0065 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 175°C max temp. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
1300 mJ
55 V
.0065 ohm
50 W
STP80NF55L-06
STP80NF55L-06 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient power management in various electronic devices.
LOGIC LEVEL COMPATIBLE
80 A
.008 ohm
210 W
320 A
CSD17576Q5BT
Texas Instruments
CSD17576Q5BT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 400A IDM, and 0.0029 ohm Drain-Source On Resistance. With a temperature range of -55 to 150 °C, it's ideal for high-power switching circuits in various electronic devices.
115 mJ
.0029 ohm
196 pF
R-PDSO-N8
e4
8
400 A
NICKEL PALLADIUM GOLD
NO LEAD
NVMFS5C404NLT1G
Onsemi
NVMFS5C404NLT1G by Onsemi is a N-CHANNEL FET with 352A max drain current and 200W power dissipation. Ideal for high-power applications, it operates at up to 175°C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration.
352 A
200 W
NVMFS5C404NLT3G
NVMFS5C404NLT3G by Onsemi is a single N-channel Power FET with 352A max drain current and 200W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, making it ideal for high-power applications in automotive and industrial sectors.
NVMFS5C410NLT1G
NVMFS5C410NLT1G by Onsemi is a N-CHANNEL FET with 315A ID and 167W power dissipation. Ideal for high-power applications, it operates up to 175 °C with METAL-OXIDE SEMICONDUCTOR tech. Suitable for surface mount designs, it features matte tin finish and peak reflow temp of 260°C.
315 A
167 W
NVMFS5C410NLT3G
NVMFS5C410NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0013 ohm RDS(on). It is used in automotive applications due to AEC-Q101 standard compliance and 175 °C operating temperature.
706 mJ
40 V
.0013 ohm
R-PDSO-F5
5
900 A
AEC-Q101
FLAT
NVMFS5C410NLWFT1G
NVMFS5C410NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0012 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
330 A
.0012 ohm
116 pF
NVMFS5C442NLT1G
NVMFS5C442NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A ID, and 0.0037 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
265 mJ
130 A
.0037 ohm
37 pF
NVMFS5C442NLT3G
NVMFS5C442NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A ID, and 0.0037 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NVMFS5C442NLWFT1G
NVMFS5C442NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A Drain Current, and 0.0037 ohm On Resistance. Ideal for automotive applications due to AEC-Q101 standard compliance and high power dissipation of 83W in small outline package.
NVMFS5C442NLWFT3G
NVMFS5C442NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0037 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C646NLT1G
NVMFS5C646NLT1G by Onsemi is a N-CHANNEL FET with 93A max drain current and 79W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features surface mount configuration for easy installation in various electronic devices.
93 A
79 W
NVMFS5C646NLT3G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Finish: Matte Tin (Sn) - annealed; Peak Reflow Temperature (C): 260;
NVMFS5C646NLWFT1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): 30;
STB80NF55-06-1
STB80NF55-06-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient power management in various electronic circuits.
TO-262AA
R-PSIP-T3
IN-LINE
STB80NF55L-06T4
STB80NF55L-06T4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient performance in power management systems.
TO-263AB
STD10PF06T4
STD10PF06T4 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A IDM and 125mJ EAS, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package style and Matte Tin finish, it offers high performance in various power management systems.
125 mJ
60 V
10 A
.2 ohm
TO-252AA
P-CHANNEL
40 A
Other Transistors
Matte Tin (Sn)
STW60NE10
STW60NE10 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, breakdown voltage of 100 V, and power dissipation up to 180 W. Ideal for high-performance power management in various electronic devices.
500 mJ
.022 ohm
TO-247AC
180 W
STB3N62K3
STB3N62K3 from STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 620V breakdown voltage, 10.8A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
620 V
2.7 A
2.5 ohm
245
45 W
10.8 A
STP3N62K3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Terminal Position: SINGLE; Terminal Finish: MATTE TIN;
FQPF9N15
Fairchild Semiconductor
FQPF9N15 by Fairchild Semiconductor is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 27.6A Max Pulsed Drain Current, 80mJ Avalanche Energy Rating, and 0.4 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W at 175°C.
80 mJ
150 V
6.9 A
.4 ohm
44 W
27.6 A
IXFR24N50Q
IXYS Corporation
IXYS Corporation's IXFR24N50Q is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 96A max pulsed drain current, 0.23 ohm max on-resistance, and 150°C max operating temperature. The transistor has a single configuration with built-in diode in a plastic/epoxy package suitable for high-power operations.
1500 mJ
500 V
22 A
.23 ohm
250 W
96 A
SPB80N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
810 mJ
.0031 ohm
220
300 W
SPB80N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Elements: 1; Maximum Drain Current (ID): 80 A;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.0035 ohm
SPB80N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 80 A;
.0034 ohm
SPB80N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Additional Features: AVALANCHE RATED; Operating Mode: ENHANCEMENT MODE;
.0048 ohm
SPB80N06S2-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 215 W; Minimum DS Breakdown Voltage: 55 V; Operating Mode: ENHANCEMENT MODE;
450 mJ
215 W
SPB80N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (Abs) (ID): 80 A;
800 mJ
.0057 ohm
SPB80N06S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 210 W; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified;
.01 ohm
SPB80N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
75 V
.0071 ohm
SPB80N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AB; Minimum DS Breakdown Voltage: 75 V;
.0087 ohm
SPP80N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
SPP80N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
.0038 ohm
SPP80N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 80 A; Transistor Element Material: SILICON;
SPP80N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB;
.0051 ohm
SPP80N06S2-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; JESD-30 Code: R-PSFM-T3; Additional Features: AVALANCHE RATED;
SPP80N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
.006 ohm
SPP80N06S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Avalanche Energy Rating (EAS): 450 mJ; JESD-609 Code: e3;
SPP80N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Maximum Drain Current (ID): 80 A;
.0074 ohm
NOT APPLICABLE
SPP80N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON;
.009 ohm
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