Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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IPP80N03S4L03AKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Terminal Position: SINGLE; Package Style (Meter): FLANGE MOUNT;
ULTRA LOW RESISTANCE
260 mJ
SINGLE WITH BUILT-IN DIODE
30 V
80 A
.0027 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
320 A
NO
TIN
THROUGH-HOLE
SINGLE
SILICON
IPP80N04S303AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Pulsed Drain Current (IDM): 320 A; Terminal Form: THROUGH-HOLE;
526 mJ
40 V
.0035 ohm
IPP80N04S306AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 125 mJ; Moisture Sensitivity Level (MSL): 1;
125 mJ
.0057 ohm
IPP80N04S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 200 mJ; No. of Terminals: 3;
200 mJ
.0037 ohm
IPP80N04S404AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; No. of Terminals: 3;
100 mJ
.0046 ohm
IPP80N06S2H5AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 80 A; Maximum Pulsed Drain Current (IDM): 320 A; Minimum DS Breakdown Voltage: 55 V;
700 mJ
55 V
.0055 ohm
IPP80N06S2L09AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; No. of Terminals: 3; Maximum Drain-Source On Resistance: .0113 ohm;
LOGIC LEVEL COMPATIBLE
370 mJ
.0113 ohm
IPP80N06S2L11AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-220AB; No. of Elements: 1;
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
280 mJ
.0147 ohm
NOT SPECIFIED
IPP80P04P405AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .0052 ohm; Maximum Pulsed Drain Current (IDM): 320 A;
64 mJ
.0052 ohm
P-CHANNEL
AEC-Q101
IPP80P04P4L04AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
60 mJ
.0071 ohm
IPP80P04P4L06AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 320 A; Maximum Drain-Source On Resistance: .0067 ohm; No. of Terminals: 3;
31 mJ
.0067 ohm
SPB80N06S08ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (ID): 80 A; Case Connection: DRAIN;
DRAIN
.0077 ohm
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
YES
GULL WING
IPA60R600P6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 18 A; No. of Terminals: 3; Terminal Form: THROUGH-HOLE;
133 mJ
ISOLATED
600 V
.6 ohm
18 A
SWITCHING
BTS7904BATMA1
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0202 ohm; Transistor Element Material: SILICON; Terminal Position: SINGLE;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
40 A
.0202 ohm
TO-263
R-PSSO-G5
5
N-CHANNEL AND P-CHANNEL
160 A
BTS7904SAKSA1
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 200 mJ; No. of Terminals: 5; Operating Mode: ENHANCEMENT MODE;
.0205 ohm
R-PSFM-T5
IPB100N04S204ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 100 A; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
AVALANCHE RATED
810 mJ
100 A
.0033 ohm
400 A
IPB100N04S2L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Case Connection: DRAIN; Transistor Element Material: SILICON;
.003 ohm
IPB100N06S205ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 810 mJ; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 400 A;
.0047 ohm
IPB100N08S207ATMA1
IPB100N08S207ATMA1 by Infineon is a N-CHANNEL Power FET with 75V DS Breakdown Voltage and 0.0068 ohm Max RDS(on). It's used in applications requiring high pulsed drain current up to 400A, such as power supplies and motor control systems.
75 V
.0068 ohm
IPB100N08S2L07ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1; Case Connection: DRAIN;
.0087 ohm
IPB120N06S402ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .0024 ohm; Terminal Position: SINGLE;
560 mJ
60 V
120 A
.0024 ohm
480 A
IPB120N06S403ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; JEDEC-95 Code: TO-263AB; Terminal Form: GULL WING;
392 mJ
.0028 ohm
IPB120N06S4H1ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Form: GULL WING; JEDEC-95 Code: TO-263AB;
1060 mJ
.0021 ohm
IPB160N04S203ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0029 ohm; Minimum DS Breakdown Voltage: 40 V; Package Body Material: PLASTIC/EPOXY;
ULTRA-LOW RESISTANCE
.0029 ohm
R-PSSO-G6
6
640 A
IPB160N04S2L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 160 A; Minimum DS Breakdown Voltage: 40 V; Maximum Pulsed Drain Current (IDM): 640 A;
IPB180N03S4LH0ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN;
980 mJ
180 A
.00095 ohm
720 A
IPB180N04S401ATMA1
Infineon's IPB180N04S401ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 0.0013 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance, it features 720A IDM and 550mJ EAS.
550 mJ
.0013 ohm
IPB180N06S4H1ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Avalanche Energy Rating (EAS): 700 mJ; Transistor Element Material: SILICON;
.0017 ohm
IPB45N06S4L08ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 180 A; Package Body Material: PLASTIC/EPOXY;
97 mJ
45 A
.0079 ohm
IPB45P03P4L11ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
110 mJ
.0111 ohm
Tin (Sn)
IPB50N10S3L16ATMA1
IPB50N10S3L16ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 50A ID, and 0.0206 ohm RDS. It's used in power applications due to its 200A IDM and 330mJ EAS ratings, making it ideal for high-power systems requiring efficient switching capabilities.
330 mJ
100 V
50 A
.0206 ohm
245
200 A
MATTE TIN
IPB80N04S204ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 40 V;
.0034 ohm
IPB80N04S2H4ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 660 mJ; Additional Features: AVALANCHE RATED; No. of Terminals: 2;
660 mJ
IPB80N04S2L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 40 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
.0031 ohm
IPB80N04S3H4ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.0048 ohm
IPB80N06S205ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 320 A;
IPB80N06S208ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 320 A;
450 mJ
IPB80N06S209ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 80 A; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING;
.0088 ohm
IPB80N06S2L05ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
800 mJ
IPB80N06S2L06ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Additional Features: LOGIC LEVEL COMPATIBLE; Operating Mode: ENHANCEMENT MODE;
530 mJ
.0084 ohm
IPB80N06S405ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 152 mJ; JESD-30 Code: R-PSSO-G2; No. of Terminals: 2;
152 mJ
IPB80N06S407ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Case Connection: DRAIN; Avalanche Energy Rating (EAS): 71 mJ;
71 mJ
IPB80N06S4L05ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0048 ohm; JESD-30 Code: R-PSSO-G2; No. of Elements: 1;
IPB80N06S4L07ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN; No. of Elements: 1;
.0064 ohm
IPB80N08S207ATMA1
IPB80N08S207ATMA1 by Infineon Technologies is a N-CHANNEL FET with 75V DS Breakdown Voltage and 320A IDM. It is used in power applications due to its 0.0071 ohm Drain-Source On Resistance, making it suitable for high current loads. The device features a built-in diode and operates in Enhancement Mode, ideal for efficient power management systems.
IPB80N08S2L07ATMA1
IPB80N08S2L07ATMA1 by Infineon is a N-CHANNEL FET with 75V DS Breakdown Voltage, 320A IDM, and 0.009 ohm RDS(on). It's used in power applications due to its 300W Pdiss, -55 to 175°C operating temp range, and AEC-Q101 standard compliance.
.009 ohm
590 pF
175 Cel
-55 Cel
260
300 W
IPB80P03P405ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 320 A; Case Connection: DRAIN; Peak Reflow Temperature (C): NOT SPECIFIED;
410 mJ
IPB80P03P4L04ATMA1
Infineon's IPB80P03P4L04ATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 80A ID, and 0.007 ohm RDS(on). Ideal for power applications due to its 320A IDM rating and 410mJ EAS. Features GULL WING terminals in a SMALL OUTLINE package.
.007 ohm
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