Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
Add filters
All
Selected
IPB80P04P407ATMA1
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): 1;
31 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
80 A
.0077 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
P-CHANNEL
320 A
YES
Tin (Sn)
GULL WING
SINGLE
SILICON
IPB80P04P4L04ATMA1
IPB80P04P4L04ATMA1 by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 320A and a max drain-source on resistance of 0.0071 ohm. This transistor is suitable for applications requiring high power and low resistance.
LOGIC LEVEL COMPATIBLE
60 mJ
.0071 ohm
IPB80P04P4L06ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 320 A;
.0064 ohm
IPB90N04S402ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PSSO-G2; Terminal Finish: TIN;
475 mJ
90 A
.0021 ohm
N-CHANNEL
360 A
TIN
IPD26N06S2L35ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 55 V;
ULTRA LOW RESISTANCE
80 mJ
55 V
30 A
.047 ohm
TO-252
120 A
AEC-Q101
IPD50N10S3L16ATMA1
IPD50N10S3L16ATMA1 by Infineon Technologies is a power FET with a min DS breakdown voltage of 100V and max pulsed drain current of 200A. It is commonly used in applications requiring high power and efficiency, such as automotive systems and industrial equipment.
330 mJ
100 V
50 A
.0199 ohm
260
200 A
IPD50P04P413ATMA1
Infineon's IPD50P04P413ATMA1 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 20A IDM, and 0.0126 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
18 mJ
.0126 ohm
20 A
IPD70P04P409ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Avalanche Energy Rating (EAS): 24 mJ; Terminal Form: GULL WING;
24 mJ
73 A
.0089 ohm
292 A
IPD80N04S306ATMA1
Infineon's IPD80N04S306ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 0.0052 ohm RDS(on), and 320A IDM. Ideal for automotive applications due to AEC-Q101 compliance and 125mJ EAS rating.
125 mJ
.0052 ohm
IPD85P04P407ATMA1
IPD85P04P407ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 85A ID, and 0.0073 ohm RDS(ON). It's used in automotive applications due to AEC-Q101 standard compliance and high IDM of 340A.
30 mJ
85 A
.0073 ohm
340 A
IPD85P04P4L06ATMA1
IPD85P04P4L06ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 85A Max Drain Current, and 0.0064 ohm RDS(ON). It's used in automotive applications due to AEC-Q101 standard compliance and 340A IDM for high-power requirements.
IPD90P04P405ATMA1
IPD90P04P405ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 360A IDM, and 0.0047 ohm RDS(ON). It's used in power applications due to its 60mJ EAS rating and ENHANCEMENT MODE operation.
.0047 ohm
IPD90P04P4L04ATMA1
IPD90P04P4L04ATMA1 by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 360A and a max drain-source on resistance of 0.0043 ohm. This transistor is commonly used in applications requiring high power and low resistance.
.0043 ohm
IPG20N04S412ATMA1
Infineon's IPG20N04S412ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.0122 ohm RDS(on). Ideal for power applications requiring high current handling in a compact SMALL OUTLINE package.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.0122 ohm
R-PDSO-F8
8
FLAT
DUAL
IPG20N06S415ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 90 mJ;
90 mJ
60 V
.0155 ohm
IPG20N06S4L14ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F8; Minimum DS Breakdown Voltage: 60 V; Moisture Sensitivity Level (MSL): 1;
.0137 ohm
IPI120N04S401AKSA1
IPI120N04S401AKSA1 by Infineon is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 120A ID. Ideal for power management applications, it features a built-in diode, 0.0019 ohm RDS(on), and 480A IDM. Suitable for enhancement mode operation in various electronic systems.
750 mJ
.0019 ohm
TO-262AA
R-PSIP-T3
3
IN-LINE
480 A
NO
THROUGH-HOLE
IPI120N04S402AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 120 A; Terminal Finish: TIN; No. of Terminals: 3;
480 mJ
IPI120P04P4L03AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Terminal Position: SINGLE; Package Body Material: PLASTIC/EPOXY;
78 mJ
IPI22N03S4L15AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 22 A; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): IN-LINE;
20 mJ
30 V
22 A
.0149 ohm
88 A
IPI47N10S33AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 400 mJ; Maximum Drain-Source On Resistance: .033 ohm; No. of Terminals: 3;
AVALANCHE RATED
400 mJ
47 A
.033 ohm
188 A
IPI47N10SL26AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; No. of Terminals: 3; Package Style (Meter): IN-LINE;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.04 ohm
IPI70N04S307AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JEDEC-95 Code: TO-262AA; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
145 mJ
70 A
280 A
IPI70N04S406AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Minimum DS Breakdown Voltage: 40 V; Maximum Pulsed Drain Current (IDM): 280 A;
72 mJ
.0065 ohm
IPI70N10S3L12AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 175 Cel;
154 mJ
.0123 ohm
175 Cel
125 W
FET General Purpose Power
IPI70N10SL16AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Maximum Pulsed Drain Current (IDM): 280 A; No. of Elements: 1;
700 mJ
.025 ohm
IPI80N03S4L03AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 80 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
260 mJ
.0027 ohm
IPI80N04S306AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 320 A; Package Style (Meter): IN-LINE; No. of Terminals: 3;
.0057 ohm
IPI80N04S403AKSA1
IPI80N04S403AKSA1 by Infineon is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 320A IDM, and 0.0037 ohm RDS(on). It is used in power applications requiring high current handling capabilities.
200 mJ
.0037 ohm
IPI80N04S4L04AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSIP-T3;
100 mJ
IPI80N06S2L11AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 55 V; Terminal Form: THROUGH-HOLE; Package Style (Meter): IN-LINE;
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
280 mJ
.0147 ohm
IPI80P04P405AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; No. of Terminals: 3;
64 mJ
IPI80P04P4L04AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .0071 ohm;
IPI90N04S402AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; Minimum DS Breakdown Voltage: 40 V; Terminal Form: THROUGH-HOLE;
.0025 ohm
IPP100N04S303AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Elements: 1;
898 mJ
100 A
.0028 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
400 A
IPP100N04S4H2AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 100 A; No. of Terminals: 3; Terminal Form: THROUGH-HOLE;
IPP100N06S2L05AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 100 A;
810 mJ
.0059 ohm
IPP120N04S302AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .0023 ohm; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-220AB;
1880 mJ
.0023 ohm
IPP120N04S401AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
IPP120N04S402AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3;
IPP120P04P404AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE; Terminal Finish: TIN;
.0038 ohm
IPP120P04P4L03AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Moisture Sensitivity Level (MSL): 1; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
IPP22N03S4L15AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 22 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
IPP47N10S33AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 188 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
IPP47N10SL26AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPP70N10S3L12AKSA1
IPP70N10S3L12AKSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 280A IDM, and 0.0123 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its robust design and high power dissipation capability.
IPP70N10SL16AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Finish: TIN; Maximum Pulsed Drain Current (IDM): 280 A;
IPP77N06S212AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .012 ohm;
77 A
.012 ohm
308 A
© 2023 All rights reserved
