Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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SIHB23N60E-GE3
Vishay Intertechnology
SIHB23N60E-GE3 by Vishay Intertechnology is a N-channel Power FET with 600V DS breakdown voltage, 23A max drain current, and 0.158 ohm max on-resistance. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode.
353 mJ
SINGLE WITH BUILT-IN DIODE
600 V
23 A
.158 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
63 A
YES
GULL WING
SINGLE
SWITCHING
SILICON
SIHB33N60ET1-GE3
SIHB33N60ET1-GE3 by Vishay Intertechnology is a power FET with N-channel polarity. It has a min DS breakdown voltage of 600V and can handle a max pulsed drain current of 88A. This transistor is commonly used for switching applications due to its high performance and small outline package style.
793 mJ
33 A
.099 ohm
88 A
BFL4007-1E
Onsemi
BFL4007-1E by Onsemi is a N-CHANNEL Power FET with 8.7A ID and 40W power dissipation. Ideal for applications requiring high drain current capability, such as power supplies and motor control systems. Operating up to 150 °C, it features METAL-OXIDE SEMICONDUCTOR technology and TIN terminal finish.
8.7 A
e3
150 Cel
40 W
FET General Purpose Powers
NO
TIN
STW57N65M5-4
STMicroelectronics
STW57N65M5-4 by STMicroelectronics is a N-CHANNEL FET with 42A max drain current and 250W power dissipation. Ideal for high-power applications, it operates at up to 150°C.
42 A
250 W
2SK3820-DL-1E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 26 A;
26 A
50 W
BFL4036-1E
BFL4036-1E by Onsemi is a N-CHANNEL FET with 14A max drain current and 37W power dissipation. Ideal for applications requiring high-power switching in environments up to 150 °C, such as power supplies and motor control systems.
14 A
37 W
FET General Purpose Power
BFL4037-1E
BFL4037-1E by Onsemi is a N-CHANNEL Power FET with 11A ID and 40W power dissipation. It operates at up to 150 °C, making it suitable for high-power applications in various industries. The METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.
11 A
NVMFS4841NWFT1G
NVMFS4841NWFT1G by Onsemi is a single N-channel Power FET with 89A max drain current and 112W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
89 A
175 Cel
260
112 W
30
NVMFS5826NLWFT1G
NVMFS5826NLWFT1G by Onsemi is a N-CHANNEL FET with 26A max drain current and 39W power dissipation. Ideal for power management applications, it operates at up to 175 °C, making it suitable for high-temperature environments. With surface mount configuration and matte tin finish, it offers efficient performance in various electronic devices.
39 W
MATTE TIN
NVMFS5826NLWFT3G
NVMFS5826NLWFT3G by Onsemi is a single N-channel Power FET with 26A max drain current and 39W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 175 °C makes it suitable for demanding environments.
NVMFS5830NLWFT1G
NVMFS5830NLWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 185A Max ID, and 0.0036 ohm RDS(ON). It's used in power applications due to its 158W Power Dissipation, 1012A IDM, and 361mJ EAS rating. Ideal for automotive industry with AEC-Q101 standard compliance.
361 mJ
DRAIN
40 V
185 A
.0036 ohm
R-PDSO-F5
5
158 W
1012 A
AEC-Q101
Matte Tin (Sn) - annealed
FLAT
DUAL
NVMFS5830NLWFT3G
NVMFS5830NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max Drain Current, and 0.0036 ohm Max RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5832NLWFT1G
NVMFS5832NLWFT1G by Onsemi is a single N-channel Power FET with 120A max drain current and 127W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features metal-oxide semiconductor technology. Suitable for surface mount assembly with matte tin finish, it offers reliable performance in demanding environments.
120 A
127 W
NVMFS5834NLWFT1G
NVMFS5834NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
48 mJ
75 A
.0136 ohm
107 W
276 A
NVMFS5834NLWFT3G
NVMFS5834NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.
Tin (Sn)
NVMFS5844NLWFT1G
NVMFS5844NLWFT1G by Onsemi is a N-CHANNEL FET with 61A max drain current and 107W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features surface mount configuration for easy installation.
61 A
NVMFS5844NLWFT3G
NVMFS5844NLWFT3G by Onsemi is a single N-channel power FET with 61A max drain current and 107W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, ideal for high-power applications in surface-mount configurations.
NVMFS5885NLWFT1G
NVMFS5885NLWFT1G by Onsemi is a N-CHANNEL FET with 39A max drain current and 54W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration in various power systems.
39 A
54 W
NVMFS5885NLWFT3G
NVMFS5885NLWFT3G by Onsemi is a N-CHANNEL FET with 39A max drain current and 54W power dissipation. Ideal for power applications, it operates at up to 175 °C, making it suitable for high-temperature environments. With surface mount configuration, it offers efficient performance in various electronic devices.
NVTFS4823NWFTAG
NVTFS4823NWFTAG by Onsemi is a single N-channel Power FET with 30A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems and industrial controls.
30 A
21 W
NVTFS4823NWFTWG
NVTFS4823NWFTWG by Onsemi is a single N-channel Power FET with 30A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems or industrial equipment.
NVTFS4824NWFTAG
NVTFS4824NWFTAG by Onsemi is a single N-channel Power FET with 46A max drain current and 21W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and industrial control systems.
46 A
NVTFS4824NWFTWG
NVTFS4824NWFTWG by Onsemi is a single N-channel power FET with 46A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems and industrial controls.
NVTFS5124PLWFTWG
NVTFS5124PLWFTWG by Onsemi is a P-CHANNEL power FET with a max drain current of 6A and max power dissipation of 18W. It is suitable for applications requiring high power handling in surface mount configurations, such as automotive electronics or industrial control systems.
6 A
P-CHANNEL
18 W
Other Transistors
NVTFS5811NLWFTWG
NVTFS5811NLWFTWG by Onsemi is a N-CHANNEL FET with 40A max drain current and 21W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration into various electronic systems.
40 A
NVTFS5820NLWFTAG
NVTFS5820NLWFTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 247A IDM, and 0.0115 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications meeting AEC-Q101 standards.
60 V
.0115 ohm
S-PDSO-F5
SQUARE
247 A
NVTFS5820NLWFTWG
NVTFS5820NLWFTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 0.0115 ohm RDS(on), and 247A IDM. Ideal for automotive applications due to AEC-Q101 compliance, it features an N-CHANNEL configuration with built-in diode in a small outline package.
NVTFS5826NLWFTWG
NVTFS5826NLWFTWG by Onsemi is a single N-channel Power FET with 20A max drain current and 22W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, ideal for high-power applications in surface mount configurations.
20 A
22 W
R6004ENJTL
ROHM
ROHM R6004ENJTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 8A max pulsed drain current, 0.98 ohm max drain-source resistance, and 46mJ avalanche energy rating. Suitable for enhancement mode operation in surface mount configurations.
46 mJ
4 A
.98 ohm
e2
8 A
TIN COPPER
10
R6020ENZ1C9
ROHM R6020ENZ1C9 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 80A IDM, 0.13 ohm max RDS(on), and 636mJ EAS. Package style: FLANGE MOUNT, technology: MOSFET, material: SILICON.
636 mJ
.13 ohm
TO-247
R-PSFM-T3
3
FLANGE MOUNT
80 A
THROUGH-HOLE
RDD023N50TL
ROHM RDD023N50TL is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 8A max pulsed drain current and 5.5 ohm max drain-source resistance. The transistor operates in enhancement mode and has a built-in diode, suitable for surface mount configurations.
21 mJ
500 V
2 A
5.5 ohm
IPD60R600P6
Infineon Technologies
Infineon's IPD60R600P6 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 18A IDM, 0.6 ohm RDS(on), and 133mJ EAS rating. Its GULL WING terminals and ENHANCEMENT MODE operation make it suitable for surface mount designs.
133 mJ
7.3 A
.6 ohm
TO-252
18 A
SI5415AEDU-T1-GE3
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: PURE MATTE TIN;
PURE MATTE TIN
ECH8672-TL-H
ECH8672-TL-H by Onsemi is a P-CHANNEL FET with 3.5A max drain current and 1.5W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, such as power management systems in automotive or industrial settings.
3.5 A
e6
1.5 W
TIN BISMUTH
EMH2411R-TL-H
EMH2411R-TL-H by Onsemi is a N-CHANNEL FET with 5A max drain current and 1.4W power dissipation. Ideal for applications requiring high efficiency in power management systems, it operates at up to 150 °C with surface mount capability.
5 A
1.4 W
CSD15571Q2
Texas Instruments
CSD15571Q2 by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a Max Pulsed Drain Current of 52A, Min DS Breakdown Voltage of 20V, and Max Drain Current of 22A. With an Operating Temperature range from -55 to 150 °C, it offers high performance in a SMALL OUTLINE package suitable for various electronic devices.
AVALANCHE RATED
18 mJ
20 V
22 A
10 A
.0192 ohm
42 pF
S-PDSO-N6
e4
6
-55 Cel
2.5 W
52 A
NICKEL PALLADIUM GOLD
NO LEAD
SIR670DP-T1-GE3
Vishay Intertechnology's SIR670DP-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage and 200A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0048 ohm max RDS(on), and 31.2mJ EAS rating in a small outline package.
31.2 mJ
60 A
.0048 ohm
R-PDSO-C5
200 A
C BEND
NVMFD5489NLT1G
NVMFD5489NLT1G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W max power dissipation. Utilizes Metal-Oxide Semiconductor tech, operates up to 175 °C, ideal for high-power applications in surface mount designs.
12 A
23.4 W
NVMFD5489NLT3G
NVMFD5489NLT3G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features surface mount technology for easy installation in various electronic devices.
NVMFD5489NLWFT3G
NVMFD5489NLWFT3G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C, suitable for surface mount applications in various electronic devices.
STF10P6F6
STF10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.16 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.
80 mJ
7.2 A
.16 ohm
TO-251
R-PSIP-T3
IN-LINE
STU10P6F6
STU10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.116 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
.116 ohm
35 W
SIS488DN-T1-GE3
Vishay Intertechnology's SIS488DN-T1-GE3 is a N-channel Power FET with 40V DS breakdown voltage and 100A IDM. Ideal for switching applications, it features a built-in diode, 0.0055 ohm RDS(on), and 20mJ EAS rating. The small outline package with C bend terminals makes it suitable for surface mount designs.
20 mJ
.0055 ohm
S-PDSO-C5
100 A
STP9N60M2
STP9N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 22A IDM and 105mJ EAS, operating in enhancement mode. With 0.78 ohm RDS(on) and 60W power dissipation, it's suitable for high-power circuits requiring efficient performance.
105 mJ
5.5 A
.78 ohm
.68 pF
TO-220AB
60 W
NVD5414NT4G
NVD5414NT4G by Onsemi is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 75A IDM, and 0.037 ohm RDS(on). Suitable for automotive (AEC-Q101) and industrial use with 175 °C max operating temp.
86.4 mJ
24 A
.037 ohm
55 W
ATP301-TL-H
The Onsemi ATP301-TL-H is a P-CHANNEL FET with 100V DS breakdown voltage, 112A IDM, and 0.075 ohm RDS(on). Ideal for power applications requiring high drain current handling. Suitable for surface mount designs due to its small outline package style.
54 mJ
100 V
28 A
.075 ohm
70 W
112 A
BFL4004-1E
BFL4004-1E by Onsemi is a N-CHANNEL FET with 4.3A ID and 36W power dissipation. Ideal for high-power applications, it operates up to 150 °C with TIN finish terminals. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.
4.3 A
36 W
NTMFD4902NFT3G
NTMFD4902NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 60A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications, it features SERIES configuration with 2 elements and built-in diode in a SMALL OUTLINE package. Operating in ENHANCEMENT MODE, it offers high performance in power management systems.
28.8 mJ
DRAIN SOURCE
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
13.5 A
.01 ohm
R-PDSO-F8
8
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