Loading...

SIHB23N60E-GE3

Vishay Intertechnology

SIHB23N60E-GE3 by Vishay Intertechnology

SIHB23N60E-GE3 by Vishay Intertechnology is a N-channel Power FET with 600V DS breakdown voltage, 23A max drain current, and 0.158 ohm max on-resistance. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode.

Median Price

$4.860

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,433 parts In-Stock

1+ parts

$4.860

100+ parts

$2.300

1k+ parts

$2.050

10k+ parts

-

1,433

$4.860

$2.300

$2.050

-

DigiKey

USA . 589 parts In-Stock

1+ parts

$4.860

100+ parts

$2.293

1k+ parts

$1.769

10k+ parts

$1.764

589

$4.860

$2.293

$1.769

$1.764

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,935 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,935

-

-

-

-

Chip Stock

USA . 1,125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,125

-

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,099 parts In-Stock

1+ parts

$0.660

100+ parts

-

1k+ parts

-

10k+ parts

-

3,099

$0.660

-

-

-

Advanced Electronics

New Zealand . 75 parts In-Stock

1+ parts

$1.745

100+ parts

$1.588

1k+ parts

$1.431

10k+ parts

-

75

$1.745

$1.588

$1.431

-

Semicontronic

India . 427 parts In-Stock

1+ parts

$2.250

100+ parts

$2.194

1k+ parts

$2.182

10k+ parts

-

427

$2.250

$2.194

$2.182

-

Ampacity Inc.

Singapore . 209 parts In-Stock

1+ parts

$2.250

100+ parts

-

1k+ parts

-

10k+ parts

-

209

$2.250

-

-

-

Corohmni

South Africa . 105 parts In-Stock

1+ parts

$2.389

100+ parts

-

1k+ parts

-

10k+ parts

-

105

$2.389

-

-

-

AZTECH Wire

Italy . 851 parts In-Stock

1+ parts

$8.725

100+ parts

-

1k+ parts

-

10k+ parts

-

851

$8.725

-

-

-

Microchip USA

USA . 4,580 parts In-Stock

1+ parts

$25.545

100+ parts

-

1k+ parts

-

10k+ parts

-

4,580

$25.545

-

-

-

Continental Prestige Electronics

USA . 6,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,010

-

-

-

-

Argo Parts USA

USA . 4,936 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,936

-

-

-

-

iodParts Technologies Inc.

India . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Vishay Intertechnology's SIHB23N60E-GE3 Power Field Effect Transistor offers reliable and efficient performance for a variety of switching applications. With a high minimum DS breakdown voltage of 600V and a maximum pulsed drain current of 63A, this N-channel FET is designed for enhanced mode operation. Its built-in diode and low on-resistance of 0.158 ohm make it an ideal choice for power management in industrial and automotive systems. Trust Vishay's expertise in semiconductor technology to deliver quality components that meet your power switching needs. Elevate your designs with the SIHB23N60E-GE3 for superior performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs offer high efficiency and fast switching speeds, making them ideal for power switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making this FET convenient for compact designs.

Transistor Application: SWITCHING

Designed specifically for switching purposes, this FET ensures efficient power management in different systems.

Surface Mount: YES

With surface mount capabilities, this FET can be easily integrated into circuit boards, saving assembly time and costs.

Minimum DS Breakdown Voltage: 600 V

The high breakdown voltage allows for handling of high power levels, making this FET suitable for demanding applications.

Package Shape: RECTANGULAR

The rectangular shape offers easy mounting and optimal space utilization within electronic devices.

Terminal Form: GULL WING

The gull wing terminals provide secure connections and easy soldering, ensuring reliable performance.

Operating Mode: ENHANCEMENT MODE

This mode allows for precise control over the FET's conductivity, making it suitable for a wide range of applications.

Maximum Pulsed Drain Current (IDM): 63 A

The high pulsed current rating ensures reliable operation during peak load conditions, making it suitable for high-power applications.

Avalanche Energy Rating (EAS): 353 mJ

With a high avalanche energy rating, this FET can withstand sudden voltage spikes or surges, ensuring long-term reliability.

No. of Terminals: 2

The 2-terminal design simplifies circuit connections and reduces complexity, making installation easier and more efficient.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact designs, making it ideal for applications with size constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

This technology offers high efficiency and performance, making the FET suitable for power management applications.

Transistor Element Material: SILICON

Silicon-based transistors provide high performance and reliability, ensuring consistent operation in various environments.

Maximum Drain Current (ID): 23 A

The high drain current rating allows for handling of high power levels, making it suitable for demanding applications.

Maximum Drain-Source On Resistance: 0.158 ohm

The low on-resistance ensures efficient power transfer and minimal heat dissipation, improving overall efficiency.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and reduces the risk of errors, making it user-friendly for installation and maintenance.

Technical Specifications

Power Field Effect Transistors (FET) SIHB23N60E-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

353 mJ

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

23 A

Maximum Drain-Source On Resistance:

.158 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

63 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SIHB23N60E-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7