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IPU50R3K0CEBKMA1

Infineon Technologies

IPU50R3K0CEBKMA1 by Infineon Technologies

Infineon's IPU50R3K0CEBKMA1 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Featuring 4.1A IDM and 18mJ EAS, it operates in enhancement mode with 3ohm RDS(on). With a max power dissipation of 18W and operating temp up to 150°C, it offers reliable performance in various industrial settings.

Median Price

$0.130

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 24,289 parts In-Stock

1+ parts

-

100+ parts

$0.136

1k+ parts

$0.113

10k+ parts

$0.100

24,289

-

$0.136

$0.113

$0.100

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.125

15,000

-

-

-

$0.125

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 803 parts In-Stock

1+ parts

$0.105

100+ parts

-

1k+ parts

-

10k+ parts

-

803

$0.105

-

-

-

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

-

10k+ parts

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1,000

$0.139

-

-

-

Vyrian

USA . 5,808 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,808

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 19,209 parts In-Stock

1+ parts

$0.094

100+ parts

$0.092

1k+ parts

$0.091

10k+ parts

-

19,209

$0.094

$0.092

$0.091

-

Corphita

USA . 939 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

-

939

$0.100

-

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.136

100+ parts

-

1k+ parts

$0.130

10k+ parts

-

500

$0.136

-

$0.130

-

Continental Prestige Electronics

USA . 4,328 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

-

10k+ parts

$0.136

4,328

$0.139

-

-

$0.136

Argo Parts USA

USA . 458 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

-

10k+ parts

$0.134

458

$0.139

-

-

$0.134

Ampacity Inc.

Singapore . 20,058 parts In-Stock

1+ parts

$0.205

100+ parts

-

1k+ parts

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10k+ parts

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20,058

$0.205

-

-

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Aztec Data Supply Inc.

USA . 1,542 parts In-Stock

1+ parts

$0.320

100+ parts

-

1k+ parts

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10k+ parts

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1,542

$0.320

-

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Modulus Dynamics

Lithuania . 15,909 parts In-Stock

1+ parts

$1.020

100+ parts

$0.979

1k+ parts

$0.938

10k+ parts

-

15,909

$1.020

$0.979

$0.938

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Corohmni

South Africa . 219 parts In-Stock

1+ parts

$1.707

100+ parts

-

1k+ parts

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219

$1.707

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AZTECH Wire

Italy . 263 parts In-Stock

1+ parts

$18.470

100+ parts

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10k+ parts

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263

$18.470

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Perfect Parts

USA . 3,360 parts In-Stock

1+ parts

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100+ parts

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3,360

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Overview

Experience the power of innovation with the IPU50R3K0CEBKMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Power Field Effect Transistors that are designed for various switching applications. With a minimum DS breakdown voltage of 500V and a maximum power dissipation of 18W, this N-channel transistor offers reliability and efficiency like no other. Whether you're in automotive, industrial, or consumer electronics, this single configuration transistor with a built-in diode provides the perfect solution for your power management needs. Trust Infineon for cutting-edge technology that drives your success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and resistance to heat, making the product reliable in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL type allows for efficient switching and control, enhancing the overall performance of the product.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse currents, making the product more versatile and user-friendly.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product ensures fast and efficient operation in various electronic circuits.

Minimum DS Breakdown Voltage: 500 V

With a high breakdown voltage, this product can handle substantial power levels, ensuring reliable performance in demanding environments.

Package Shape: RECTANGULAR

The rectangular shape allows for convenient mounting and integration into circuit boards, making installation hassle-free.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure connection and easy soldering, ensuring proper installation and reliable electrical conductivity.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for precise control and efficient power usage, enhancing the overall performance of the product.

Maximum Pulsed Drain Current (IDM): 4.1 A

With a high pulsed drain current rating, this product can handle sudden surges in power, ensuring reliable operation in dynamic conditions.

Avalanche Energy Rating (EAS): 18 mJ

The high avalanche energy rating provides protection against voltage spikes and transient events, ensuring the longevity of the product.

Maximum Drain Current (Abs) (ID): 1.7 A

With a maximum drain current of 1.7 A, this product is capable of handling moderate power levels, making it suitable for a wide range of applications.

No. of Terminals: 3

Having 3 terminals allows for easy connection and integration into existing circuit designs, making the product versatile and compatible with various setups.

Maximum Power Dissipation (Abs): 18 W

The high power dissipation rating ensures that the product can handle heat efficiently, preventing overheating and ensuring long-term reliability.

Package Style (Meter): IN-LINE

The in-line package style allows for space-saving installation and compact designs, making the product ideal for applications with limited space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology offers high efficiency and fast switching speeds, enhancing the overall performance of the product.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this product can withstand high temperatures, making it suitable for industrial and automotive applications.

Transistor Element Material: SILICON

The silicon transistor element provides reliability and stability, ensuring consistent performance over an extended period of time.

Maximum Drain-Source On Resistance: 3 ohm

With a low drain-source on resistance, this product minimizes power loss and heat generation, improving overall efficiency and performance.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and ensures proper alignment, making the product user-friendly and easy to integrate into existing systems.

Technical Specifications

Power Field Effect Transistors (FET) IPU50R3K0CEBKMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

18 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

1.7 A

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

4.1 A

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPU50R3K0CEBKMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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