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STI6N80K5

STMicroelectronics

STI6N80K5 by STMicroelectronics

STI6N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 18A IDM, 85mJ EAS, and 1.6Ω RDS(ON). The transistor operates in ENHANCEMENT MODE with SILICON element material and DRAIN case connection.

Median Price

$1.008

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 45 parts In-Stock

1+ parts

$0.934

100+ parts

-

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-

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45

$0.934

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Verical

USA . 45 parts In-Stock

1+ parts

-

100+ parts

$1.083

1k+ parts

$1.083

10k+ parts

$1.083

45

-

$1.083

$1.083

$1.083

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,298 parts In-Stock

1+ parts

$0.887

100+ parts

-

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1,298

$0.887

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Vyrian

USA . 6,513 parts In-Stock

1+ parts

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6,513

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Anansix

USA . 1,783 parts In-Stock

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1,783

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,662 parts In-Stock

1+ parts

$0.551

100+ parts

-

1k+ parts

$0.496

10k+ parts

-

1,662

$0.551

-

$0.496

-

Corphita

USA . 3,700 parts In-Stock

1+ parts

$0.841

100+ parts

-

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3,700

$0.841

-

-

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MKK Technologies

India . 1,128 parts In-Stock

1+ parts

$1.036

100+ parts

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1,128

$1.036

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DigiPath Technology Company

USA . 1,128 parts In-Stock

1+ parts

$1.036

100+ parts

-

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1,128

$1.036

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Andel Nordic

Denmark . 549 parts In-Stock

1+ parts

$5.382

100+ parts

-

1k+ parts

$5.167

10k+ parts

$5.167

549

$5.382

-

$5.167

$5.167

AZTECH Wire

Italy . 296 parts In-Stock

1+ parts

$12.220

100+ parts

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296

$12.220

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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Alle Elektronik GmbH

Germany . 4,527 parts In-Stock

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4,527

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Kepictronics

USA . 1,900 parts In-Stock

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1,900

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Parana Technologies

USA . 762 parts In-Stock

1+ parts

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100+ parts

$0.659

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762

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$0.659

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Overview

Unlock the power of innovation with the STI6N80K5 by STMicroelectronics. Crafted with precision and expertise, this N-channel Power Field Effect Transistor offers unparalleled performance in switching applications. With a minimum DS Breakdown Voltage of 800V and maximum Drain Current of 4.5A, this transistor is designed to exceed expectations. Whether you're looking to enhance your electronic devices or boost efficiency, the STI6N80K5 delivers unmatched value and reliability. Elevate your projects with the trusted quality of STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent insulation and protection for the components inside, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs generally have better performance and lower on-resistance compared to P-Channel FETs, making them more efficient.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easier and more efficient circuit design, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it ideal for power control and management.

Minimum DS Breakdown Voltage: 800 V

High breakdown voltage provides reliable operation in high voltage applications, ensuring safety and stability.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting on circuit boards and efficient use of space.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring good electrical contact.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the FET, providing efficient switching performance.

Maximum Pulsed Drain Current (IDM): 18 A

High pulsed drain current rating ensures the FET can handle sudden spikes in current without damage.

Avalanche Energy Rating (EAS): 85 mJ

High avalanche energy rating indicates the FET can withstand potential voltage spikes, ensuring longevity and reliability.

No. of Terminals: 3

Three terminals provide all necessary connections for proper operation and control of the FET.

Package Style (Meter): IN-LINE

In-line package style allows for easy installation and connection in linear circuits.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides good performance, high efficiency, and low power consumption.

Transistor Element Material: SILICON

Silicon material offers good reliability, thermal stability, and overall performance for the FET.

Maximum Drain Current (ID): 4.5 A

High maximum drain current rating allows the FET to handle high current loads without overheating or damage.

Maximum Drain-Source On Resistance: 1.6 ohm

Low on-resistance ensures minimal power loss and heat dissipation in the FET, improving overall efficiency.

Terminal Position: SINGLE

Single terminal position simplifies the connection and control of the FET in a circuit.

Case Connection: DRAIN

Drain connection offers easy integration into a circuit and ensures proper functionality of the FET.

Technical Specifications

Power Field Effect Transistors (FET) STI6N80K5 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

85 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

1.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

18 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STI6N80K5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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