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STY34NB50

STMicroelectronics

STY34NB50 by STMicroelectronics

STY34NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 136A Max Pulsed Drain Current, 0.13 ohm Max RDS(on), and 1000mJ Avalanche Energy Rating. Suitable for high-power circuits requiring efficient switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,787 parts In-Stock

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Anansix

USA . 2,513 parts In-Stock

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2,513

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Digiode

USA . 2,143 parts In-Stock

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Global Solutions Electronics Company

USA . 228 parts In-Stock

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LWI Electronics Inc

India . 15 parts In-Stock

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15

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ECAB

Sweden . 3 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 1,798 parts In-Stock

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$0.522

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$0.469

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1,798

$0.522

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$0.469

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MKK Technologies

India . 2,104 parts In-Stock

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$0.981

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$0.981

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DigiPath Technology Company

USA . 2,104 parts In-Stock

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$0.981

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$0.981

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AZTECH Wire

Italy . 95 parts In-Stock

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$17.750

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95

$17.750

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A-Z Elektronik GmbH

Germany . 4,857 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,070 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,877 parts In-Stock

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Corphita

USA . 532 parts In-Stock

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Parana Technologies

USA . 121 parts In-Stock

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$0.624

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$0.624

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Overview

Discover the power and reliability of the STY34NB50 by STMicroelectronics, a top-tier manufacturer in the industry. This N-CHANNEL Power FET is designed for switching applications, offering a high DS breakdown voltage of 500V and a maximum drain current of 34A. With its built-in diode configuration and enhanced mode operation, this transistor provides exceptional performance and efficiency. Whether you're working on industrial equipment, automotive systems, or renewable energy projects, the STY34NB50 delivers the quality and value you need to succeed. Choose STMicroelectronics for superior technology that meets your demands.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good protection and durability for the FET, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer better performance and efficiency compared to P-channel FETs, making this product a good choice for various applications.

Minimum DS Breakdown Voltage: 500 V

This high breakdown voltage allows the FET to handle high voltage levels, making it suitable for high-power applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can efficiently control the flow of current, making it ideal for power management.

Maximum Power Dissipation (Abs): 450 W

With a high power dissipation rating, this FET can handle large amounts of power without overheating, ensuring reliable operation.

Maximum Operating Temperature: 150 °C

The FET can operate at high temperature levels without performance degradation, making it suitable for challenging environments.

Technical Specifications

Power Field Effect Transistors (FET) STY34NB50 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

1000 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

34 A

Maximum Drain Current (ID):

34 A

Maximum Drain-Source On Resistance:

.13 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

136 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STY34NB50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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