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2SJ649-AZ

Renesas Electronics

2SJ649-AZ by Renesas Electronics

The Renesas Electronics 2SJ649-AZ is a P-CHANNEL FET with max drain current of 20A and power dissipation of 25W. Ideal for applications requiring high power handling in a single configuration, such as power supplies or motor control systems. Operating up to 150°C, it offers reliability and performance under demanding conditions.

Median Price

$7.530

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 1,000 parts In-Stock

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$7.530

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$7.180

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1,000

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$7.530

$7.180

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VNN

France . 4,315 parts In-Stock

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4,315

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Vyrian

USA . 3,856 parts In-Stock

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3,856

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Chip Stock

USA . 2,800 parts In-Stock

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2,800

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 901 parts In-Stock

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$6.400

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901

$6.400

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AZTECH Wire

Italy . 264 parts In-Stock

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$11.880

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264

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Component Stockers USA

USA . 493 parts In-Stock

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$99.990

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493

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Continental Prestige Electronics

USA . 1,287 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Argo Parts USA

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Overview

Experience the power and reliability of Renesas Electronics with the 2SJ649-AZ Power Field Effect Transistor. As a trusted manufacturer in the industry, Renesas Electronics delivers top-quality products that exceed expectations. This P-CHANNEL FET is perfect for a wide range of applications, offering customers unmatched performance and efficiency. Trust in Renesas Electronics to provide cutting-edge technology that will take your projects to the next level. Choose the 2SJ649-AZ for superior results every time.

Feature Benefit Bullets

Polarity or Channel Type

P-CHANNEL FETs are commonly used in applications where low power consumption is important, making this product a good choice for energy-efficient designs.

Configuration

Single configuration FETs are often easier to design with and troubleshoot, making this product a user-friendly choice for engineers.

Maximum Drain Current (Abs) (ID)

With a high maximum drain current of 20 A, this FET is suitable for applications requiring high power handling capabilities.

Maximum Power Dissipation (Abs)

The high power dissipation rating of 25 W allows this FET to handle transient power spikes effectively, making it a reliable choice for high-performance applications.

Field Effect Transistor Technology

The metal-oxide semiconductor technology offers good reliability and switching performance, making this FET suitable for a wide range of applications.

Maximum Operating Temperature

With a high maximum operating temperature of 150°C, this FET can withstand high temperature environments, making it a robust choice for industrial applications.

Maximum Time At Peak Reflow Temperature (s)

The low maximum time at peak reflow temperature of 10 seconds minimizes the risk of damage during soldering, ensuring the reliability of the product.

Peak Reflow Temperature °C

The high peak reflow temperature of 260°C enables secure soldering connections, making this FET suitable for applications requiring robust solder joints.

Technical Specifications

Power Field Effect Transistors (FET) 2SJ649-AZ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

2SJ649-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Renesas Electronics

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