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2SJ651

Onsemi

2SJ651 by Onsemi

The Onsemi 2SJ651 is a P-CHANNEL FET with 60V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a 0.092 ohm Drain-Source On Resistance and 175mJ EAS rating. The transistor's PLASTIC/EPOXY body and ENHANCEMENT MODE operation make it suitable for various power control tasks.

Median Price

$1.587

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$1.716

100+ parts

$1.562

1k+ parts

$1.407

10k+ parts

-

100

$1.716

$1.562

$1.407

-

Rochester

USA . 4,278 parts In-Stock

1+ parts

-

100+ parts

$1.530

1k+ parts

$1.270

10k+ parts

$1.130

4,278

-

$1.530

$1.270

$1.130

Verical

USA . 4,058 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.587

10k+ parts

$1.413

4,058

-

-

$1.587

$1.413

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 404 parts In-Stock

1+ parts

$1.197

100+ parts

-

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404

$1.197

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Vyrian

USA . 444 parts In-Stock

1+ parts

$1.260

100+ parts

-

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444

$1.260

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DigiKey Marketplace

USA . 4,278 parts In-Stock

1+ parts

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4,278

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Distributors (Availability)

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Corphita

USA . 159 parts In-Stock

1+ parts

$1.134

100+ parts

-

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159

$1.134

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-

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Corohmni

South Africa . 334 parts In-Stock

1+ parts

$1.260

100+ parts

-

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334

$1.260

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.716

100+ parts

$1.562

1k+ parts

$1.407

10k+ parts

-

100

$1.716

$1.562

$1.407

-

Microchip USA

USA . 498 parts In-Stock

1+ parts

$7.865

100+ parts

-

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498

$7.865

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Problanco Electronics

Mexico . 7,868 parts In-Stock

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7,868

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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TANS Electronics

Latvia . 4,664 parts In-Stock

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4,664

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Continental Prestige Electronics

USA . 4,278 parts In-Stock

1+ parts

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100+ parts

$1.040

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4,278

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$1.040

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SupplyDigital Components

Austria . 2,674 parts In-Stock

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2,674

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Kulean Microsystems

USA . 1,449 parts In-Stock

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1,449

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Native Components

USA . 840 parts In-Stock

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840

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UHIMA Technologies

Türkiye . 654 parts In-Stock

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654

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Northwest PG Solutions

USA . 65 parts In-Stock

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65

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Overview

Enhance your electronic devices with the 2SJ651 Power Field Effect Transistor by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers high-quality components that are reliable and efficient. The 2SJ651 is perfect for switching applications, offering a maximum pulsed drain current of 80A and a minimum DS breakdown voltage of 60V. Its single configuration with built-in diode provides added convenience, while its low drain-source on resistance ensures optimal performance. Trust Onsemi to provide you with the best components for your projects. Elevate your designs with the 2SJ651 FET today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for long-term use in various applications.

Polarity or Channel Type: P-CHANNEL

Offers low on-resistance and high transconductance, resulting in efficient power management and reduced heat generation.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for reverse current protection, enhancing the reliability and safety of the circuit.

Transistor Application: SWITCHING

Designed for high-speed switching applications, making it ideal for use in power supplies, motor controls, and inverters.

Minimum DS Breakdown Voltage: 60 V

Offers a high breakdown voltage, ensuring reliable operation in high voltage circuits and providing protection against voltage spikes.

Package Shape: RECTANGULAR

Provides a compact and efficient design, allowing for easy installation and integration into electronic devices.

Terminal Form: THROUGH-HOLE

Enables easy soldering and secure connections, ensuring stable performance in various environments.

Operating Mode: ENHANCEMENT MODE

Allows for precise control over the transistor's conductivity, offering flexibility in adjusting the power output of the circuit.

Maximum Pulsed Drain Current (IDM): 80 A

Capable of handling high currents during short pulses, making it suitable for applications requiring power surges or spikes.

Avalanche Energy Rating (EAS): 175 mJ

Provides protection against voltage transients and energy spikes, ensuring the safety and longevity of the transistor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high switching speeds and low on-state resistance, enhancing the efficiency and performance of the transistor.

Transistor Element Material: SILICON

Provides reliable operation over a wide temperature range and ensures consistent performance in various operating conditions.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Delivers excellent conductivity and corrosion resistance, ensuring stable connections and long-term reliability.

Maximum Drain Current (ID): 20 A

Capable of handling high continuous currents, making it suitable for power management applications that require a reliable and efficient solution.

Maximum Drain-Source On Resistance: 0.092 ohm

Provides low on-state resistance, minimizing power losses and improving the overall efficiency of the circuit.

Terminal Position: SINGLE

Simplifies the circuit design and layout, making it easier to incorporate the transistor into existing systems.

Case Connection: ISOLATED

Ensures electrical isolation between the transistor and the mounting surface, reducing the risk of short circuits and improving safety in high-voltage applications.

Technical Specifications

Power Field Effect Transistors (FET) 2SJ651 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

175 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.092 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

80 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ651 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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