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STFV3N150

STMicroelectronics

STFV3N150 by STMicroelectronics

STFV3N150 from STMicroelectronics is an N-channel FET designed for switching applications, featuring a 1500V breakdown voltage and a max drain current of 2.5A. It operates in enhancement mode with a power dissipation of up to 30W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,913 parts In-Stock

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2,913

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Vyrian

USA . 2,235 parts In-Stock

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2,235

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Anansix

USA . 1,423 parts In-Stock

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1,423

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,451 parts In-Stock

1+ parts

$0.459

100+ parts

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$0.413

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1,451

$0.459

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$0.413

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MKK Technologies

India . 603 parts In-Stock

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$0.863

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603

$0.863

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DigiPath Technology Company

USA . 603 parts In-Stock

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$0.863

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603

$0.863

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AZTECH Wire

Italy . 352 parts In-Stock

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$15.840

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352

$15.840

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QUARKTWIN TECHNOLOGY LTD

USA . 5,950 parts In-Stock

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5,950

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Alle Elektronik GmbH

Germany . 3,151 parts In-Stock

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Corphita

USA . 2,897 parts In-Stock

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2,897

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Parana Technologies

USA . 1,508 parts In-Stock

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$0.549

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1,508

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$0.549

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Overview

Elevate your designs with the STFV3N150 from STMicroelectronics—a powerhouse in N-channel FET technology. Renowned for unmatched quality and reliability, STMicroelectronics ensures your applications benefit from superior performance and thermal management. Ideal for switching applications, this versatile transistor handles high voltages with ease, providing engineers like you a competitive edge in efficiency and durability. Empower your projects with proven innovation and steadfast support!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight, ensuring reliable performance and easy integration into various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower on-resistance and better switching capabilities, making them ideal for efficient switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances functionality by providing protection against reverse voltage conditions, simplifying circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET ensures high efficiency and fast response times.

Minimum DS Breakdown Voltage: 1500 V

With a high breakdown voltage, this transistor can safely operate in high-voltage environments, improving reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space usage on PCBs, facilitating compact designs.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical and electrical connections, making it suitable for a variety of applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode improves the efficiency and performance of switching operations, providing better control in circuits.

Maximum Pulsed Drain Current (IDM): 10 A

Handles higher pulsed currents, which is beneficial for applications requiring brief spikes of power without damage.

Avalanche Energy Rating (EAS): 450 mJ

A higher avalanche energy rating indicates robustness against transient conditions, enhancing reliability under unexpected electrical stress.

Maximum Drain Current (Abs) (ID): 2.5 A

Can accommodate moderate current levels, making it suitable for various switching applications without overheating.

No. of Terminals: 3

Having three terminals simplifies connections, making it easier to integrate into existing circuit designs.

Maximum Power Dissipation (Abs): 30 W

With a high power dissipation capability, this FET can handle significant power levels, providing safe operation at higher loads.

Package Style (Meter): FLANGE MOUNT

Flange mount provides added thermal performance and mechanical stability, especially beneficial in high-stress applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high input impedance and fast switching speeds, ideal for power management applications.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures reliable performance in demanding environments, extending product lifespan.

Transistor Element Material: SILICON

Silicon is a widely used material in semiconductor devices, offering a balance of performance and cost-effectiveness.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and corrosion resistance, providing reliable long-term electrical connections.

Maximum Drain Current (ID): 2.5 A

This specification emphasizes the transistor's capability to efficiently manage moderate currents, essential for diverse applications.

Maximum Drain-Source On Resistance: 9 ohm

Low on-resistance provides high efficiency during operation, reducing heat generation and improving overall system performance.

Terminal Position: SINGLE

Single terminal position allows for simplified connections in a compact form factor, making layout easier in PCB designs.

Case Connection: ISOLATED

Isolation ensures that the device operates safely in sensitive environments, preventing unwanted feedback into the circuit.

Technical Specifications

Power Field Effect Transistors (FET) STFV3N150 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

450 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

1500 V

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

9 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

10 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STFV3N150 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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