Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FQD5N60CTF by Fairchild Semiconductor is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 11.2A IDM, 210mJ EAS, and 49W Max Power Dissipation. Its PLASTIC/EPOXY package with GULL WING terminals makes it suitable for surface mount installations.
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The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications where weight and durability are important factors.
N-CHANNEL FETs typically have higher electron mobility and conductivity, making them efficient for switching applications and allowing for lower power consumption.
The built-in diode simplifies circuit design and protects the FET from reverse current flow, enhancing the overall reliability of the product.
Designed specifically for switching applications, this FET offers fast switching speeds and low on-state resistance for efficient performance in various electronic devices.
Surface mount technology allows for easy placement and soldering of the FET onto a PCB, saving space and enabling automated manufacturing processes.
The high breakdown voltage ensures reliable operation in high voltage applications, making this FET suitable for power distribution and control systems.
The gull wing terminal form provides a secure connection to the PCB, reducing the risk of solder joint failures and ensuring good thermal management.
Enhancement mode FETs require a positive voltage to turn on, allowing for precise control over the switching operation and improving overall efficiency.
The high pulsed drain current rating allows the FET to withstand short-term overload conditions, making it suitable for applications with peak current demands.
The high avalanche energy rating indicates the FET's ability to handle energy spikes and transient overloads, ensuring reliable operation in harsh environments.
The high drain current rating allows the FET to carry a significant load current, making it suitable for moderate to high power applications.
The high power dissipation rating indicates the FET's ability to handle heat generated during operation, ensuring long-term reliability and prevent thermal issues.
The small outline package style saves space on the PCB and allows for dense circuit layouts, making it suitable for compact electronic devices.
Metal-oxide semiconductor technology provides low gate capacitance and high switching speeds, making this FET ideal for high-frequency applications with minimal power loss.
The high maximum operating temperature rating allows the FET to operate reliably in elevated temperature environments, ensuring stable performance under varying conditions.
Silicon is a widely used semiconductor material known for its high thermal conductivity and electrical performance, making it suitable for high-power applications.
Matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and long-term durability of the FET.
The low on-resistance minimizes power loss and heat generation in the FET, improving overall efficiency and allowing for high current handling capability.
The single terminal position simplifies the connection of the FET to the PCB, reducing assembly complexity and making it easy to integrate into circuit designs.
The drain connection allows for convenient implementation of the FET in various circuit configurations, providing flexibility in design and enabling efficient power distribution.
Power Field Effect Transistors (FET) FQD5N60CTF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor
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FQD5N60CTF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Passivation Material 26/June/2007
In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.
BAV99
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
L7805CV
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Output Voltage-1: 5 V;
LL4148
Bkc Semiconductors
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358M
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM317AEMP/NOPB
Texas Instruments
LM317AEMP/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and a max output current of 1.5A. It operates in temperatures ranging from -40°C to 125°C, making it suitable for various applications requiring precise voltage regulation in a compact package.
Hy Electronic
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
OPA2277UA/2K5
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Eic Semiconductor
SMBJ18CA
Jiangsu Jiejie Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
Won-top Electronics
LD1117S33TR
STMicroelectronics
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
Yangzhou Yangjie Electronics
Taitron Components
ISO1050DUBR
ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.
International Semiconductor
FDB3632-F085
FDB3632-F085 by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 100V. It is an N-channel transistor with a max drain current of 12A and a max power dissipation of 310W. This transistor is commonly used for switching applications in various industries.
IPB200N25N3GATMA1
Infineon Technologies
Infineon's IPB200N25N3GATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 0.02 ohm max RDS(on), and 256A IDM. Ideal for switching applications, it operates in enhancement mode with a built-in diode. The transistor features GULL WING terminals, can handle up to 175°C, and has an EAS of 320mJ.
FDS8984
FDS8984 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 32mJ Avalanche Energy Rating. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS and BUILT-IN DIODE. This small outline transistor has a max operating temperature of 150°C and can handle up to 30A pulsed drain current.
SPW47N60C3
SPW47N60C3 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a Max Drain Current of 47A and 0.07 ohm On Resistance, suitable for high-power applications. Ideal for use in power supplies, motor control, and industrial equipment due to its high current handling capabilities.
CSD18543Q3A
CSD18543Q3A by Texas Instruments is a N-CHANNEL Power FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 156A IDM, and 0.0156 ohm Drain-Source On Resistance. With METAL-OXIDE SEMICONDUCTOR technology, it operates b/w -55 to 150 °C, making it ideal for high-power switching circuits.
IRFP460LC
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
ZXMP10A18KTC
Diodes Incorporated
ZXMP10A18KTC by Diodes Inc. is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 21.1A IDM, 0.15 ohm RDS(on), and operates in ENHANCEMENT MODE at up to 150°C. Suitable for surface mount with GULL WING terminals, it offers high performance in compact SMALL OUTLINE package style.
FDS8984_F085
FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
TN2510N8-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-30 Code: R-PSSO-F3; Maximum Feedback Capacitance (Crss): 25 pF;
IRFB4227PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
CSD16301Q2
CSD16301Q2 by Texas Instruments is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 2.3W. This SMALL OUTLINE transistor has a -55 to 150 °C operating temperature range and 0.034 ohm Drain-Source On Resistance.
AO4490L
Alpha & Omega Semiconductor
AO4490L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.8W and can handle up to 16A drain current.
BSC028N06NSATMA1
Infineon BSC028N06NSATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.0028 ohm RDS(on), and 23A ID. Ideal for SWITCHING applications due to its 400A IDM and 100mJ EAS ratings. Suitable for ENHANCEMENT MODE operation in various electronic devices.
FDB44N25TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 307 W; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN;
FDS4675
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Maximum Drain Current (ID): 11 A; Terminal Position: DUAL;
IRF1010NSTRLPBF
IRF1010NSTRLPBF by Infineon Technologies is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 290A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.011 ohm Drain-Source On Resistance and can handle up to 170W power dissipation.
IRLML6401TRPBF-1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; No. of Elements: 1;
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. Features include 240A pulsed drain current, 0.0098 ohm max on resistance, and 30mJ avalanche energy rating. Package style is small outline with 8 terminals in plastic/epoxy material.
IRF640
Comset Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
IRFZ44NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;
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FQD5P20TM
FQD5P20TM by Onsemi is a P-CHANNEL Power FET with 200V DS Breakdown Voltage and 14.8A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it offers 1.4 ohm RDS(on) and 45W Max Power Dissipation at up to 150°C.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
FQD5N20LTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Terminal Form: GULL WING; Maximum Pulsed Drain Current (IDM): 15.2 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260;
FQD5P10TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Peak Reflow Temperature (C): 260; Maximum Drain-Source On Resistance: 1.05 ohm;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
FQD5N60CTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 49 W; No. of Terminals: 2; Maximum Drain Current (Abs) (ID): 2.8 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 49 W; Terminal Finish: MATTE TIN; Avalanche Energy Rating (EAS): 210 mJ;
FQD5N60C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 2.5 ohm; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 11.2 A; Package Body Material: PLASTIC/EPOXY;
FQD5N15TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (ID): 4.3 A; Transistor Element Material: SILICON;
FQD5N50CTM-WS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 16 A; Package Style (Meter): SMALL OUTLINE;
FQD5P10
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;
FQD5N20L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Minimum DS Breakdown Voltage: 200 V; Maximum Operating Temperature: 150 Cel;
FQD5N50CTF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 300 mJ;
FQD5N50CTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; JEDEC-95 Code: TO-252AA; Package Style (Meter): SMALL OUTLINE;
FQD5N60CTM_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 600 V; Maximum Drain-Source On Resistance: 2.5 ohm; Transistor Application: SWITCHING;
FQD5N20TF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Maximum Drain Current (ID): 3.8 A; Package Style (Meter): SMALL OUTLINE;
FQD5N30TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
FQD5N40TF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; No. of Elements: 1; Case Connection: DRAIN;
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