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FQD5P10TM

Onsemi

FQD5P10TM by Onsemi

FQD5P10TM by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage and 14.4A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 1.05 ohm RDS(on), and operates in ENHANCEMENT MODE up to 150°C.

Median Price

$0.709

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 6 parts In-Stock

1+ parts

$0.709

100+ parts

-

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-

10k+ parts

$0.302

6

$0.709

-

-

$0.302

DigiKey

USA . 2,500 parts In-Stock

1+ parts

-

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$1.470

2,500

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$1.470

Chip1Stop

Japan . 573 parts In-Stock

1+ parts

-

100+ parts

$0.413

1k+ parts

$0.354

10k+ parts

$0.299

573

-

$0.413

$0.354

$0.299

Verical

USA . 105 parts In-Stock

1+ parts

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$0.709

105

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$0.709

Rochester

USA . 80 parts In-Stock

1+ parts

-

100+ parts

$0.409

1k+ parts

$0.339

10k+ parts

$0.303

80

-

$0.409

$0.339

$0.303

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 996 parts In-Stock

1+ parts

$0.333

100+ parts

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996

$0.333

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.759

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300

$0.759

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Chip Stock

USA . 35,979 parts In-Stock

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35,979

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Flip Electronics

USA . 2,500 parts In-Stock

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2,500

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EMSNET

USA . 2,500 parts In-Stock

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2,500

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ACDS - Activité Composants Distribution Service

France . 1,867 parts In-Stock

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1,867

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Bristol Electronics

USA . 1,867 parts In-Stock

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1,867

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Dan-Mar Components

USA . 1,867 parts In-Stock

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1,867

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Vyrian

USA . 170 parts In-Stock

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170

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Distributors (Availability)

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Ampacity Inc.

Singapore . 218 parts In-Stock

1+ parts

$0.298

100+ parts

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218

$0.298

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Corphita

USA . 1,059 parts In-Stock

1+ parts

$0.316

100+ parts

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1,059

$0.316

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Corohmni

South Africa . 249 parts In-Stock

1+ parts

$0.351

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249

$0.351

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Component Stockers USA

USA . 1,437 parts In-Stock

1+ parts

$0.360

100+ parts

$0.350

1k+ parts

$0.320

10k+ parts

-

1,437

$0.360

$0.350

$0.320

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Argo Parts USA

USA . 1,823 parts In-Stock

1+ parts

$0.759

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1,823

$0.759

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Netroflash

USA . 50 parts In-Stock

1+ parts

$0.759

100+ parts

$0.744

1k+ parts

-

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50

$0.759

$0.744

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Continental Prestige Electronics

USA . 128 parts In-Stock

1+ parts

$0.907

100+ parts

$0.671

1k+ parts

$0.507

10k+ parts

-

128

$0.907

$0.671

$0.507

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Microchip USA

USA . 381 parts In-Stock

1+ parts

$2.330

100+ parts

$2.330

1k+ parts

$2.330

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$2.320

381

$2.330

$2.330

$2.330

$2.320

Perfect Parts

USA . 45,167 parts In-Stock

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45,167

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Lixinc

USA . 19,539 parts In-Stock

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SupplyDigital Components

Austria . 4,526 parts In-Stock

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Problanco Electronics

Mexico . 3,732 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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Kulean Microsystems

USA . 2,607 parts In-Stock

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2,607

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iodParts Technologies Inc.

India . 1,867 parts In-Stock

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1,867

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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UHIMA Technologies

Türkiye . 849 parts In-Stock

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849

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TANS Electronics

Latvia . 693 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Supply Digital

USA . 254 parts In-Stock

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254

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Kepictronics

USA . 101 parts In-Stock

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101

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Overview

Unlock the power of innovation with the FQD5P10TM by Onsemi! This high-quality P-Channel Power Field Effect Transistor is designed for switching applications, offering enhanced performance and reliability. With a maximum power dissipation of 25W and a minimum DS breakdown voltage of 100V, this transistor is ideal for a wide range of electronic devices. Experience the benefits of Onsemi's cutting-edge technology and elevate your projects to new heights of efficiency and precision. Choose the FQD5P10TM for unparalleled quality and performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures the transistor is lightweight and durable, making it suitable for a wide range of applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low on-resistance and high current-carrying capability, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and protects the transistor from reverse polarity.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low power dissipation.

Surface Mount: YES

Being surface mountable saves space on the PCB and allows for automated assembly, increasing efficiency and reducing cost.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this FET can handle high voltages and is suitable for a variety of power applications.

Maximum Power Dissipation (Abs): 25 W

The high power dissipation rating allows for reliable operation under high load conditions, ensuring the longevity of the transistor.

Maximum Drain-Source On Resistance: 1.05 ohm

Low on-resistance results in reduced power losses and improved efficiency, making this FET ideal for high-performance applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this FET can withstand harsh environments and extreme conditions without compromising performance.

Technical Specifications

Power Field Effect Transistors (FET) FQD5P10TM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

55 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

3.6 A

Maximum Drain Current (ID):

3.6 A

Maximum Drain-Source On Resistance:

1.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

14.4 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQD5P10TM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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