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SQJ459EP-T1_GE3

Vishay Intertechnology

SQJ459EP-T1_GE3 by Vishay Intertechnology

The Vishay Intertechnology SQJ459EP-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 200A IDM. Ideal for power applications, it features a built-in diode, 0.018 ohm RDS(on), and 80mJ EAS rating. Suitable for enhancement mode operation in various electronic systems requiring high current handling capabilities.

Median Price

$0.781

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 4,762 parts In-Stock

1+ parts

$1.260

100+ parts

$0.714

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$0.464

10k+ parts

$0.439

4,762

$1.260

$0.714

$0.464

$0.439

Newark

USA . 2,975 parts In-Stock

1+ parts

$1.720

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$1.090

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2,975

$1.720

$1.090

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Mouser Electronics

USA . 46,325 parts In-Stock

1+ parts

$2.140

100+ parts

$0.925

1k+ parts

$0.673

10k+ parts

$0.611

46,325

$2.140

$0.925

$0.673

$0.611

DigiKey

USA . 771 parts In-Stock

1+ parts

$2.140

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$0.924

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$0.673

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771

$2.140

$0.924

$0.673

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Element14

Singapore . 2,723 parts In-Stock

1+ parts

$3.100

100+ parts

$1.350

1k+ parts

$0.882

10k+ parts

$0.865

2,723

$3.100

$1.350

$0.882

$0.865

EBV Elektronik

Germany . 210,000 parts In-Stock

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TTI Europe

Germany . 15,000 parts In-Stock

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$0.627

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$0.627

Future Electronics

Canada . 9,000 parts In-Stock

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$0.935

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$0.935

Arrow

USA . 6,000 parts In-Stock

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$0.535

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$0.535

Verical

USA . 6,000 parts In-Stock

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$0.535

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TTI

USA . 3,000 parts In-Stock

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$0.545

3,000

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$0.545

Avnet

USA . 3,000 parts In-Stock

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$0.522

3,000

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$0.522

Chip1Stop

Japan . 3,000 parts In-Stock

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$0.572

3,000

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$0.572

Distributors (In-Stock)

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Nova Conductors

Japan . 29 parts In-Stock

1+ parts

$0.819

100+ parts

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29

$0.819

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Ozdisan Elektronik

Türkiye . 57,112 parts In-Stock

1+ parts

$47.048

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57,112

$47.048

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Chip Stock

USA . 72,500 parts In-Stock

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Rutronik

Germany . 60,000 parts In-Stock

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$0.610

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$0.610

Vyrian

USA . 54,417 parts In-Stock

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NAC Semi

USA . 51,000 parts In-Stock

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$1.450

51,000

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$1.450

Cyclops Electronics Ltd

UK . 21,000 parts In-Stock

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NexGen Digital

USA . 9,000 parts In-Stock

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IBS Electronics

USA . 9,000 parts In-Stock

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$1.311

9,000

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$1.311

Sensible Micro Corp

USA . 490 parts In-Stock

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490

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Kiltronic GmbH

Germany . 1 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 18,267 parts In-Stock

1+ parts

$0.411

100+ parts

$0.401

1k+ parts

$0.399

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18,267

$0.411

$0.401

$0.399

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Ampacity Inc.

Singapore . 54,452 parts In-Stock

1+ parts

$0.442

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54,452

$0.442

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Advanced Electronics

New Zealand . 29 parts In-Stock

1+ parts

$0.484

100+ parts

$0.460

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$0.460

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29

$0.484

$0.460

$0.460

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Continental Prestige Electronics

USA . 6,011 parts In-Stock

1+ parts

$0.814

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$0.798

6,011

$0.814

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$0.798

Argo Parts USA

USA . 2,526 parts In-Stock

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$0.814

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2,526

$0.814

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.819

100+ parts

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$0.778

10k+ parts

$0.762

2,000

$0.819

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$0.778

$0.762

Corohmni

South Africa . 120 parts In-Stock

1+ parts

$0.998

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120

$0.998

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Aztec Data Supply Inc.

USA . 31,360 parts In-Stock

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$1.840

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31,360

$1.840

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Modulus Dynamics

Lithuania . 1,459 parts In-Stock

1+ parts

$1.912

100+ parts

$1.912

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$1.912

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1,459

$1.912

$1.912

$1.912

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Microchip USA

USA . 9,370 parts In-Stock

1+ parts

$4.024

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9,370

$4.024

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RC Electronics

USA . 69,173 parts In-Stock

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A-Z Elektronik GmbH

Germany . 51,000 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Robosynatics

Brazil . 14,408 parts In-Stock

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14,408

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Lucentia Tech

USA . 14,408 parts In-Stock

1+ parts

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$1.536

1k+ parts

$1.504

10k+ parts

$1.504

14,408

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$1.536

$1.504

$1.504

Perfect Parts

USA . 3,360 parts In-Stock

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3,360

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Technoshack Inc. (Excess)

Canada . 3,000 parts In-Stock

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Overview

Upgrade your power system with the SQJ459EP-T1_GE3 by Vishay Intertechnology. This P-Channel Power FET offers exceptional performance and reliability, thanks to Vishay's reputation for high-quality components. With a built-in diode and a maximum drain current of 52 A, this transistor is perfect for applications requiring enhanced power efficiency. Trust Vishay Intertechnology to deliver top-notch products that exceed expectations. Elevate your power system today with the SQJ459EP-T1_GE3!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the FET, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

The P-channel design allows for efficient current flow and low power consumption in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps protect the circuit from reverse current flow, enhancing the overall reliability of the FET.

Surface Mount: YES

The surface mount option makes it easy to integrate the FET onto circuit boards, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can handle higher voltages without risk of damage, ensuring stability in high-power applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on the circuit board, optimizing space utilization.

Terminal Form: GULL WING

The gull wing terminals provide secure connections, minimizing the risk of disconnection or malfunction.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation enables precise control over the FET's conductivity, allowing for efficient power management.

Maximum Pulsed Drain Current (IDM): 200 A

The high pulsed drain current rating makes this FET suitable for applications requiring short bursts of high current.

Avalanche Energy Rating (EAS): 80 mJ

The FET's high avalanche energy rating ensures reliable operation in high-energy environments.

No. of Terminals: 4

With four terminals, this FET offers versatile connectivity options for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The MOSFET technology offers high switching speeds and low power consumption, making this FET efficient in a variety of applications.

Transistor Element Material: SILICON

The silicon material provides excellent thermal stability and performance, ensuring long-term reliability of the FET.

Maximum Drain Current (ID): 52 A

With a high drain current rating, this FET can handle large currents, making it ideal for power-intensive applications.

Maximum Drain-Source On Resistance: 0.018 ohm

The low on-resistance minimizes power loss and heat generation, enhancing the overall efficiency of the FET.

Terminal Position: SINGLE

The single terminal position simplifies the wiring process and ensures proper orientation during assembly.

Case Connection: DRAIN

The drain connection allows for efficient heat dissipation, keeping the FET cool and ensuring optimal performance.

Technical Specifications

Power Field Effect Transistors (FET) SQJ459EP-T1_GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

80 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

52 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

200 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

SQJ459EP-T1_GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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