Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Vishay Intertechnology's SQJ407EP-T1_GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for power applications. Featuring 155A IDM and 0.0044 ohm RDS(on), it operates in Enhancement Mode with -55 to 175 °C temperature range. Suitable for automotive and industrial sectors due to AEC-Q101 compliance and high current handling capabilities.
Median Price
$1.115
Lifecycle Status
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18
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1k+
Farnell
1+ parts
$1.060
100+ parts
$0.591
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$0.457
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$0.411
Mouser Electronics
$2.170
$0.900
$0.691
$0.621
DigiKey
$0.937
$0.744
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Chip1Stop
$0.529
Arrow
$0.523
Verical
Element14
$1.170
$0.807
Future Electronics
$1.650
Nova Conductors
$0.833
Bristol Electronics
$1.500
$0.555
$0.390
Vyrian
Chip Stock
ComSIT Distribution GmbH
NAC Semi
$3.000
IBS Electronics
$2.764
Prism Electronics
Sensible Micro Corp
Speed Components Ltd
Semicontronic
$0.326
$0.318
$0.316
Ampacity Inc.
Bastille Electronics
$0.791
$0.752
$0.741
Argo Parts USA
Continental Prestige Electronics
$0.816
Advanced Electronics
$0.866
$0.823
Aztec Data Supply Inc.
$1.010
Corohmni
$1.310
Microchip USA
$4.092
RC Electronics
Authorized Procurement Solutions
PLastic/epoxy package provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.
P-channel FETs are known for high electron mobility and lower resistance, making them suitable for high efficiency power applications.
Built-in diode allows for better protection against reverse currents, enhancing the reliability and performance of the transistor.
Surface mount capability makes installation easier and allows for more compact designs in electronic circuits.
Breakdown voltage of 30V ensures safe operation within specified limits, providing protection against voltage spikes or fluctuations.
Rectangular package shape allows for easier mounting and placement on circuit boards, optimizing space utilization.
Gull wing terminal form facilitates easy soldering and connection, ensuring secure electrical contact.
Enhancement mode operation offers fast switching speeds and high efficiency in power management applications.
High pulsed drain current capability makes this FET suitable for applications requiring high power handling capacity.
High avalanche energy rating indicates robustness against voltage spikes and transient overloads, ensuring reliable operation in harsh conditions.
Four terminals provide necessary connections for power input, output, and gate control, enabling flexibility in circuit design.
Small outline package style allows for compact and space-saving designs, ideal for applications with limited board space.
Metal-oxide semiconductor technology offers high performance, low power consumption, and stable operation, making it a reliable choice for power FETs.
High operating temperature rating of 175°C ensures reliable performance in demanding environments with elevated temperatures.
Silicon material provides good thermal conductivity, high breakdown voltage, and stable characteristics, contributing to the reliability of the transistor.
Low minimum operating temperature of -55°C allows for operation in cold environments without compromising performance.
High drain current rating of 60A enables the FET to handle large current loads efficiently, making it suitable for high-power applications.
Low drain-source on resistance provides efficient power conversion and low power losses, enhancing overall performance.
Single terminal position simplifies circuit connections and reduces complexity in circuit layouts, improving ease of use and installation.
Drain case connection simplifies heat dissipation and thermal management, ensuring optimal operating conditions for the transistor.
High peak reflow temperature of 260°C allows for reliable soldering processes during manufacturing and assembly.
Compliance with AEC-Q101 standard ensures high quality, reliability, and durability, making this FET suitable for automotive and industrial applications.
Power Field Effect Transistors (FET) SQJ407EP-T1_GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Reference Standard:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Element Material:
SQJ407EP-T1_GE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
LM107H
Linear Technology
LM107H by Linear Technology is an Operational Amplifier with a max input offset voltage of 3000uV, common mode reject ratio of 96dB, and min voltage gain of 50000. It is used in military applications due to its MILITARY temperature grade and BIPOLAR technology for precise signal processing in harsh environments.
LM317LMX/NOPB
Texas Instruments
LM317LMX/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max input-output voltage differential of 40V. It operates in temperatures ranging from -40°C to 125°C and has a max output current of 0.1A, making it suitable for various applications requiring precise voltage regulation.
SBAV99LT1G
Onsemi
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
MBR0520LT1
Motorola
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
STM32H743IIT6
STMicroelectronics
STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).
LM358N
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
USB2514BI-AEZG
Microchip Technology
USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.
NDT2955
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AT90CAN128-16AUR
AT90CAN128-16AUR by Microchip: 16 MHz clock, 8-bit data RAM, and 131072 ROM words. Ideal for industrial applications with CAN, SPI, TWI connectivity and low power mode. Contains 4 timers, 8 ADC channels, and supports up to 10-bit analog to digital conversion.
CRCW080510R0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Harris Semiconductor
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148
Shandong Yiguang Electronic Joint Stock
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
FT232RL-TUBE
FTDI
FTDI's FT232RL-TUBE is a bus controller with 28 terminals, operating at 3.3-5.25V. It supports USB, VBUS, and UART interfaces with a data transfer rate of 60MBps. Ideal for industrial applications requiring RS232/RS422/RS485 compatibility in compact designs due to its small outline package style.
2N2222A
Micropac Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
AT90CAN128-16AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
RN41N-I/RM
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
IRFP250NPBF
Infineon Technologies
IRFP250NPBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A IDM, 315mJ EAS, and 0.075ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 214W and can withstand temperatures from -55 to 150 °C.
IRF640STRRPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSSO-G2;
BSS138
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
IRFR4620TRLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
FDMS86350ET80
The Onsemi FDMS86350ET80 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 693A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0024 ohm RDS(on), and operates in ENHANCEMENT MODE.
FDS8949_F085
Fairchild Semiconductor
FDS8949_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.029 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices requiring efficient power management in compact designs.
IRFZ44NLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Terminals: 3;
IRF7342TRPBF
IRF7342TRPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 27A Max IDM and 114mJ EAS, operating in ENHANCEMENT MODE. With GULL WING terminals and a SMALL OUTLINE package style, it offers 0.105 ohm RDS(on) for efficient performance.
IRLML0030TRPBF
Infineon's IRLML0030TRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.3A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 1.3W Power Dissipation, and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
IRFS4010TRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Operating Temperature: 175 Cel; Package Shape: RECTANGULAR;
IRF9358TRPBF
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 210 mJ;
IRLML6401PBF
IRLML6401PBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 33mJ EAS. With ENHANCEMENT MODE operation, it has a -55 to 150 °C temperature range and 0.05 ohm RDS(on). Ideal for compact designs with its SMALL OUTLINE package style.
IRFR3410TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1;
IRF7103TRPBF-1
Power Field-Effect Transistors;
IRF9540NSTRLPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; No. of Terminals: 2; Terminal Form: GULL WING;
PMV40UN2R
PMV40UN2R by NXP Semiconductors is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 16A IDM, and 0.044 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor operates in an ENHANCEMENT MODE with a max temperature of 150 °C.
CSD19534Q5A
CSD19534Q5A by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 137A IDM, and 0.0176 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching circuits in various electronic devices.
IRFR120NTRPBF
IRFR120NTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 38A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.21 ohm On Resistance, and operates in ENHANCEMENT MODE.
FDC5612-F095
FDC5612-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.3A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems and motor control circuits.
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SQJ402EP-T1_GE3
Vishay Intertechnology's SQJ402EP-T1_GE3 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 32A ID. Ideal for applications requiring high current handling, such as power supplies or motor control systems. Features include 48mJ EAS rating, -55 to 175 °C operating temp range, and 0.011 ohm Drain-Source On Resistance.
SQJ431EP-T1_GE3
Vishay Intertechnology's SQJ431EP-T1_GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, 40A IDM, and 0.221 ohm RDS(ON). Ideal for power applications requiring high drain current and low on-resistance in a small outline package.
SQJ459EP-T1_GE3
The Vishay Intertechnology SQJ459EP-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 200A IDM. Ideal for power applications, it features a built-in diode, 0.018 ohm RDS(on), and 80mJ EAS rating. Suitable for enhancement mode operation in various electronic systems requiring high current handling capabilities.
SQJ431AEP-T1_GE3
Vishay Intertechnology's SQJ431AEP-T1_GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, 37A IDM, and 0.315 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
SQJ457EP-T1_GE3
Vishay Intertechnology's SQJ457EP-T1_GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.025 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
SQJ479EP-T1_GE3
Vishay Intertechnology's SQJ479EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 100A IDM, and 0.033 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
SQJ469EP-T1_GE3
Vishay Intertechnology's SQJ469EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 128A IDM, and 0.025 ohm RDS(ON). Ideal for power applications requiring high drain current capability in compact designs. Operating in enhancement mode, it offers efficient performance up to 175°C.
SQJ409EP-T1_GE3
Vishay Intertechnology's SQJ409EP-T1_GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 150A IDM, and 0.007 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
SQJ461EP-T1_GE3
Vishay Intertechnology's SQJ461EP-T1_GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for power applications. Featuring 85A IDM and 0.015 ohm RDS(on), it operates in Enhancement Mode at up to 175°C. With AEC-Q101 compliance, this MOSFET is suitable for automotive and industrial electronics.
SQJ454EP-T1_GE3
Vishay Intertechnology's SQJ454EP-T1_GE3 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 30A IDM. Ideal for applications requiring high power dissipation up to 68W, such as automotive systems due to AEC-Q101 standard compliance.
SQJ479EP-T1_BE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; No. of Elements: 1; Terminal Form: GULL WING;
SQJ481EP-T1_GE3
Vishay Intertechnology's SQJ481EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 60A IDM, and 0.08 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
SQJ488EP-T1_GE3
Vishay Intertechnology's SQJ488EP-T1_GE3 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 170A IDM, and 0.021 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
SQJ459EP-T2_BE3
Vishay Intertechnology's SQJ459EP-T2_BE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 200A IDM, and 0.018 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Operates in enhancement mode with fast turn-on/off times and can withstand up to 80mJ of avalanche energy.
SQJ476EP-T1_GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 23 A; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
SQJ418EP-T1_GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Minimum Operating Temperature: -55 Cel; Terminal Form: GULL WING;
SQJ463EP-T1_GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SQJ416EP-T1_GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: GULL WING;
SQJ415EP-T1_GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
SQJ407EP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Form: GULL WING; Reference Standard: AEC-Q101;
Supply Digital Components
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