Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
FQD5N60CTM by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a built-in diode for SWITCHING applications, offering 11.2A IDM and 2.8A ID. With an EAS of 210mJ and RDS(on) of 2.5 ohm, it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power switching circuits.
Median Price
$1.054
Lifecycle Status
Suppliers In-Stock
19
In-Stock Inventory
1k+
Rochester
1+ parts
$0.620
100+ parts
$0.610
1k+ parts
$0.600
10k+ parts
-
Adafruit Industries
$0.942
$0.867
$0.812
Arrow
$0.665
$0.495
Chip1Stop
$1.176
$0.647
$0.510
Mouser Electronics
$1.560
$0.793
DigiKey
$1.920
$0.822
$0.594
Verical
Digiode
$0.503
Component Electronics Inc.
$0.770
$0.580
$0.500
Maritex
$0.898
$0.480
$0.340
Chip Stock
Vyrian
LIBRA Elektronik GmbH
Ack Elektronik San.Tic.Ltd.Sti
ComSIT Distribution GmbH
Bristol Electronics
Nova Conductors
Speed Components Ltd
Flip Electronics
Ampacity Inc.
$0.365
Corohmni
$0.425
Corphita
$0.476
Advanced Electronics
Aztec Data Supply Inc.
$1.380
Perfect Parts
Metaverse IC Inc.
QUARKTWIN TECHNOLOGY LTD
Microchip USA
Problanco Electronics
TANS Electronics
Authorized Procurement Solutions
Kulean Microsystems
Infinite Electronics LLP (Excess)
Kepictronics
Supply Digital
iodParts Technologies Inc.
SupplyDigital Components
Continental Prestige Electronics
UHIMA Technologies
Bastille Electronics
Argo Parts USA
Plastic/epoxy material offers durability and heat resistance, making the transistor suitable for a wide range of applications.
N-Channel type allows for efficient switching and control of current flow in the desired direction.
Built-in diode simplifies circuit design and ensures better protection against reverse current flow.
Designed specifically for switching applications, ensuring reliable performance in controlling electrical circuits.
High breakdown voltage allows for operation in high voltage applications, providing safety and reliability.
High pulsed drain current capability enables the transistor to handle temporary current spikes without failure.
With high power dissipation rating, the transistor can handle large amounts of power without overheating.
Operates efficiently at high temperatures, ensuring stable performance in various operating conditions.
Low on-resistance minimizes power loss and improves efficiency in switching applications.
Power Field Effect Transistors (FET) FQD5N60CTM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
FQD5N60CTM Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Description Chg 01/Apr/2016 Passivation Material 26/June/2007
PCN Assembly/Origin - Multi Dev 29/Sep/2022
PCN Packaging - Mult Devices 24/Oct/2017
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148
Taitron Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358MX
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
2N2222A
Surge Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
SS14
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Plessey Semiconductors Discrete Components Div
Other Transistors;
CRCW04020000Z0EDHP
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.
BAV99
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW080510R0FKEA
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
LM358M
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148WT
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1552200253
Molex
WIRE AND CABLE;
MS3V-T1R32.768KHZ+/-20PPM12.5PF
Golledge Electronics
MS3V-T1R32.768KHZ+/-20PPM12.5PF by Golledge Electronics is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 12.5 pF load capacitance. It is ideal for applications requiring precise timing in temperature-sensitive environments due to its -40 to 85 °C operating range.
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Terry Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;
MBR0520LT1
Onsemi
MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.
Frontier Electronics
Silicon Transistor
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
FDMS86263P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 70 A;
BSC600N25NS3GATMA1
Infineon Technologies
BSC600N25NS3GATMA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 100A IDM, and 0.06 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor operates b/w -55 to 150 °C and has a max power dissipation of 125W in a SMALL OUTLINE package.
SI7850DP-T1-E3
SI7850DP-T1-E3 by Vishay Intertechnology is an N-channel power field effect transistor (FET) with a min DS breakdown voltage of 60V. It is designed for switching applications and has a max pulsed drain current of 40A. This surface mount transistor operates in enhancement mode and has a max operating temperature of 150°C.
IRF540SPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 230 mJ; Maximum Drain-Source On Resistance: .077 ohm;
IRFZ44NS
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Terminal Position: SINGLE;
SUM110P06-08L-E3
Vishay Semiconductors
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTD5865NLT4G
NTD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 52W and can withstand temperatures from -55 to 150 °C.
NDT456P
NDT456P by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 7.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it offers 0.03 ohm On Resistance and can handle up to 20A Pulsed Drain Current.
IRF640NPBF
Infineon's IRF640NPBF is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A Max Pulsed Drain Current and 247mJ Avalanche Energy Rating. Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can withstand temperatures from -55 to 175°C.
IPD90P04P4L04ATMA1
IPD90P04P4L04ATMA1 by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 360A and a max drain-source on resistance of 0.0043 ohm. This transistor is commonly used in applications requiring high power and low resistance.
FQP27P06_SW82127
FQP27P06_SW82127 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 108A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 120W, this transistor has a -55 to 175 °C operating temperature range.
IRFR5410TRPBF
IRFR5410TRPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, 52A IDM, and 0.205 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE. Features include 194mJ EAS, 66W Pdiss, and -55 to 150°C operating temp range.
FQB22P10TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Elements: 1; Terminal Finish: MATTE TIN;
SI7415DN-T1-GE3
SI7415DN-T1-GE3 by Vishay Intertechnology is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3.6A and max power dissipation of 3.8W.
IRFP4468PBF
IRFP4468PBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a max IDM of 1120A and EAS of 740mJ, ideal for SWITCHING applications. With 0.0026 ohm RDS(on) and 520W Pdiss, it operates in ENHANCEMENT MODE at up to 175°C.
FDB3632
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 310 W; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30;
SQ2361ES-T1_GE3
The Vishay Intertechnology SQ2361ES-T1_GE3 is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 11A and an avalanche energy rating of 7.8mJ. This transistor is suitable for applications requiring high power and efficient switching capabilities.
IRFR9024PBF
Vishay Intertechnology's IRFR9024PBF is a P-CHANNEL FET with 60V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.28 ohm On Resistance. Suitable for high-power circuits, it has a max power dissipation of 42W and can withstand temperatures from -55 to 150°C.
IRF7401TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Pulsed Drain Current (IDM): 35 A;
STN1NK80Z
STMicroelectronics
STN1NK80Z by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features 5A IDM, 16 ohm RDS(on), and 50mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
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FDD5N60NZTM
FDD5N60NZTM by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 16A and EAS of 216mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package style and GULL WING terminals, it offers high power dissipation up to 83W at 150°C.
FQD5P20TM
FQD5P20TM by Onsemi is a P-CHANNEL Power FET with 200V DS Breakdown Voltage and 14.8A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it offers 1.4 ohm RDS(on) and 45W Max Power Dissipation at up to 150°C.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
FQD5N20LTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Terminal Form: GULL WING; Maximum Pulsed Drain Current (IDM): 15.2 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260;
FQD5P10TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Peak Reflow Temperature (C): 260; Maximum Drain-Source On Resistance: 1.05 ohm;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
FQD5N60CTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 49 W; Terminal Finish: MATTE TIN; Avalanche Energy Rating (EAS): 210 mJ;
FQD5N60C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 2.5 ohm; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 11.2 A; Package Body Material: PLASTIC/EPOXY;
FQD5N60CTF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 49 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
FQD5N15TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (ID): 4.3 A; Transistor Element Material: SILICON;
FQD5N50CTM-WS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 16 A; Package Style (Meter): SMALL OUTLINE;
FQD5P10
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;
FQD5N50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
FQD5N50CTF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 300 mJ;
FQD5N60CTM_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 600 V; Maximum Drain-Source On Resistance: 2.5 ohm; Transistor Application: SWITCHING;
FQD5N20LTF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 200 V;
FQD5N20TF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Maximum Drain Current (ID): 3.8 A; Package Style (Meter): SMALL OUTLINE;
FQD5N20TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Maximum Drain Current (Abs) (ID): 3.8 A; Operating Mode: ENHANCEMENT MODE;
FQD5N50CTM_WS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
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