Loading...

STD6NM60N

STMicroelectronics

STD6NM60N by STMicroelectronics

STD6NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,981 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,981

-

-

-

-

Digiode

USA . 1,956 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,956

-

-

-

-

Anansix

USA . 559 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

559

-

-

-

-

Bristol Electronics

USA . 135 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

135

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,048 parts In-Stock

1+ parts

$0.999

100+ parts

-

1k+ parts

$0.899

10k+ parts

-

1,048

$0.999

-

$0.899

-

MKK Technologies

India . 1,018 parts In-Stock

1+ parts

$1.879

100+ parts

-

1k+ parts

-

10k+ parts

-

1,018

$1.879

-

-

-

DigiPath Technology Company

USA . 1,018 parts In-Stock

1+ parts

$1.879

100+ parts

-

1k+ parts

-

10k+ parts

-

1,018

$1.879

-

-

-

AZTECH Wire

Italy . 311 parts In-Stock

1+ parts

$16.430

100+ parts

-

1k+ parts

-

10k+ parts

-

311

$16.430

-

-

-

Component Stockers USA

USA . 467 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

467

$99.990

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 24,373 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,373

-

-

-

-

Kepictronics

USA . 13,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,700

-

-

-

-

Alle Elektronik GmbH

Germany . 4,338 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,338

-

-

-

-

Corphita

USA . 3,939 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,939

-

-

-

-

Parana Technologies

USA . 601 parts In-Stock

1+ parts

-

100+ parts

$1.195

1k+ parts

-

10k+ parts

-

601

-

$1.195

-

-

Overview

Elevate your designs with the STD6NM60N from STMicroelectronics—a trusted leader in semiconductor innovation. This N-channel power FET offers exceptional performance in switching applications, designed to enhance efficiency and reliability while ensuring superior thermal management. Its compact surface-mount package simplifies integration, making it ideal for a variety of electronic devices. Experience the perfect blend of quality and performance that meets your project demands effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures lightweight and durable construction, enhancing the reliability of the FET.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their lower on-resistance and higher efficiency, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy integration in circuits, providing protection against reverse polarity and enhancing performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET ensures fast operation and high efficiency in power control circuits.

Surface Mount: YES

Surface mount capabilities facilitate compact designs and automated assembly, improving production efficiency.

Minimum DS Breakdown Voltage: 600 V

A high breakdown voltage improves the safety and reliability of the transistor, making it suitable for high voltage applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCBs, allowing for more efficient layouts in electronic designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent solderability and mechanical stability, ensuring strong connections in electronic circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows the FET to minimize power loss in the 'off' state, maximizing energy efficiency.

Maximum Pulsed Drain Current (IDM): 18.4 A

A high pulsed drain current rating allows for handling of current spikes efficiently, ideal for demanding applications.

Avalanche Energy Rating (EAS): 65 mJ

A robust avalanche energy rating indicates the FET can withstand transient conditions, ensuring durability in dynamic environments.

Maximum Drain Current (Abs) (ID): 4.6 A

This maximum drain current rating ensures reliable operation in moderate current applications.

No. of Terminals: 2

The 2-terminal design simplifies circuit integration, reducing complexity and potential points of failure.

Maximum Power Dissipation (Abs): 45 W

A high power dissipation capability ensures the device can handle significant workloads without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact solution, freeing up space on the PCB for other components.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and faster switching speeds, enhancing overall performance.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures reliability in harsh environments, expanding application possibilities.

Transistor Element Material: SILICON

Silicon is a well-established material for FETs, providing excellent performance and stability in electronic applications.

Terminal Finish: MATTE TIN

Matte tin finish helps prevent oxidation, improving shelf life and ensuring reliable long-term connections.

Maximum Drain Current (ID): 4.6 A

Reiterated rating emphasizes the FET's capability for continuous operation under specified conditions.

Maximum Drain-Source On Resistance: 0.92 ohm

Low on-resistance translates to lower power loss and heat generation during operation, increasing efficiency.

Terminal Position: SINGLE

Single terminal position allows for straightforward PCB routing, simplifying layout design.

Technical Specifications

Power Field Effect Transistors (FET) STD6NM60N attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

65 mJ

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

4.6 A

Maximum Drain Current (ID):

4.6 A

Maximum Drain-Source On Resistance:

.92 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

18.4 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD6NM60N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20