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STD6NK50ZT4

STMicroelectronics

STD6NK50ZT4 by STMicroelectronics

STD6NK50ZT4 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 22.4A IDM and 1.2ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 90W and can withstand temperatures up to 150°C.

Median Price

$0.692

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2 parts In-Stock

1+ parts

$0.073

100+ parts

-

1k+ parts

-

10k+ parts

-

2

$0.073

-

-

-

Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$0.655

100+ parts

$0.596

1k+ parts

$0.537

10k+ parts

-

2,500

$0.655

$0.596

$0.537

-

Chip1Stop

Japan . 2 parts In-Stock

1+ parts

$0.728

100+ parts

-

1k+ parts

-

10k+ parts

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2

$0.728

-

-

-

DigiKey

USA . 2,645 parts In-Stock

1+ parts

$2.250

100+ parts

$0.982

1k+ parts

$0.757

10k+ parts

$0.618

2,645

$2.250

$0.982

$0.757

$0.618

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

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2,500

-

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 948 parts In-Stock

1+ parts

$0.258

100+ parts

-

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-

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948

$0.258

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.679

100+ parts

-

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10

$0.679

-

-

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Cyclops Electronics Ltd

UK . 10,000 parts In-Stock

1+ parts

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10,000

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Pegasus Components GmbH

Germany . 5,000 parts In-Stock

1+ parts

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5,000

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ComSIT Distribution GmbH

Germany . 5,000 parts In-Stock

1+ parts

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5,000

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ACDS - Activité Composants Distribution Service

France . 4,949 parts In-Stock

1+ parts

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4,949

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Holdelec - ElecDif-Pro

France . 4,949 parts In-Stock

1+ parts

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4,949

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Anansix

USA . 1,624 parts In-Stock

1+ parts

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1,624

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Vyrian

USA . 1,162 parts In-Stock

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1,162

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,184 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

10k+ parts

-

1,184

$0.062

-

-

-

Corphita

USA . 2,163 parts In-Stock

1+ parts

$0.245

100+ parts

-

1k+ parts

-

10k+ parts

-

2,163

$0.245

-

-

-

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.655

100+ parts

$0.596

1k+ parts

$0.537

10k+ parts

-

2,500

$0.655

$0.596

$0.537

-

Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

$0.679

100+ parts

$0.645

1k+ parts

$0.613

10k+ parts

$0.604

500

$0.679

$0.645

$0.613

$0.604

Continental Prestige Electronics

USA . 2,516 parts In-Stock

1+ parts

$0.679

100+ parts

-

1k+ parts

-

10k+ parts

$0.665

2,516

$0.679

-

-

$0.665

Argo Parts USA

USA . 386 parts In-Stock

1+ parts

$0.679

100+ parts

-

1k+ parts

-

10k+ parts

$0.659

386

$0.679

-

-

$0.659

IDEA Electronic Components Group

UK . 1,863 parts In-Stock

1+ parts

$1.394

100+ parts

-

1k+ parts

$1.254

10k+ parts

-

1,863

$1.394

-

$1.254

-

Aztec Data Supply Inc.

USA . 168 parts In-Stock

1+ parts

$1.823

100+ parts

-

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168

$1.823

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Corohmni

South Africa . 85 parts In-Stock

1+ parts

$1.866

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-

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85

$1.866

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MKK Technologies

India . 2,118 parts In-Stock

1+ parts

$2.621

100+ parts

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2,118

$2.621

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DigiPath Technology Company

USA . 2,118 parts In-Stock

1+ parts

$2.621

100+ parts

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2,118

$2.621

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Microchip USA

USA . 6,612 parts In-Stock

1+ parts

$4.976

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6,612

$4.976

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Perfect Parts

USA . 31,114 parts In-Stock

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31,114

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Infinite Electronics LLP (Excess)

. 25,008 parts In-Stock

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25,008

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Kepictronics

USA . 12,500 parts In-Stock

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12,500

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Benley Electronics

USA . 11,566 parts In-Stock

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11,566

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A-Z Elektronik GmbH

Germany . 7,328 parts In-Stock

1+ parts

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7,328

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Lixinc

USA . 2,224 parts In-Stock

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2,224

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Parana Technologies

USA . 2,196 parts In-Stock

1+ parts

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100+ parts

$1.666

1k+ parts

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2,196

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$1.666

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Alle Elektronik GmbH

Germany . 1,063 parts In-Stock

1+ parts

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100+ parts

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1,063

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Overview

Discover the power and efficiency of the STD6NK50ZT4 by STMicroelectronics. This N-CHANNEL Power Field Effect Transistor is a game-changer in the switching applications, offering reliable performance and durability. With a maximum drain current of 5.6 A and a breakdown voltage of 500 V, this transistor ensures seamless operation even in high-power conditions. Its small outline package and matte tin terminal finish make it easy to integrate into various electronic devices. Trust STMicroelectronics for superior quality and innovative solutions that elevate your projects to new heights. Upgrade to the STD6NK50ZT4 and experience unmatched performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Ideal for use in switch applications, where N-channel FETs are commonly used for efficient power switching.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Allows for easy and compact PCB assembly, saving space and making it suitable for modern electronic devices.

Minimum DS Breakdown Voltage: 500 V

Offers high voltage capability for efficient power handling in different applications.

Package Shape: RECTANGULAR

Provides a standardized form factor for easy integration into various electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering onto the PCB, ensuring a reliable connection in the circuit.

Operating Mode: ENHANCEMENT MODE

Offers fast switching speeds and low ON-state resistance, making it efficient for power control applications.

Maximum Pulsed Drain Current (IDM): 22.4 A

Handles high transient currents, ensuring reliable performance under peak load conditions.

Avalanche Energy Rating (EAS): 180 mJ

Ability to withstand high-energy transient events, ensuring device reliability in harsh operating conditions.

Maximum Drain Current (Abs) (ID): 5.6 A

Capable of handling moderate continuous currents for various power applications.

No. of Terminals: 2

Simplifies circuit connections and reduces complexity in designing electronic systems.

Maximum Power Dissipation (Abs): 90 W

Allows for efficient heat dissipation, ensuring reliable operation under high-power conditions.

Package Style (Meter): SMALL OUTLINE

Compact size makes it suitable for space-constrained applications without compromising performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and low power consumption for energy-sensitive applications.

Maximum Operating Temperature: 150 °C

Can operate reliably at elevated temperatures, suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Provides high performance and reliability, making it a durable choice for various applications.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures a strong solder joint for reliable connections in a circuit.

Maximum Drain-Source On Resistance: 1.2 ohm

Low ON resistance minimizes power loss and improves efficiency in power switching applications.

Terminal Position: SINGLE

Simplifies PCB layout and ensures correct orientation during assembly.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for safe and efficient soldering during assembly processes.

Peak Reflow Temperature °C: 260

Offers a high temperature tolerance during the soldering process, ensuring proper bonding of the component to the PCB.

Technical Specifications

Power Field Effect Transistors (FET) STD6NK50ZT4 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

180 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

5.6 A

Maximum Drain Current (ID):

5.6 A

Maximum Drain-Source On Resistance:

1.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

22.4 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD6NK50ZT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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