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STK822

STMicroelectronics

STK822 by STMicroelectronics

STK822 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 152 A, a breakdown voltage of 25 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Vyrian

USA . 8,994 parts In-Stock

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R&J Components

USA . 2,659 parts In-Stock

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Bristol Electronics

USA . 2,606 parts In-Stock

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Digiode

USA . 2,253 parts In-Stock

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Anansix

USA . 1,997 parts In-Stock

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Zilex Electronics Inc.

Canada . 20 parts In-Stock

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IDEA Electronic Components Group

UK . 986 parts In-Stock

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$0.460

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$0.414

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986

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$0.414

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MKK Technologies

India . 1,649 parts In-Stock

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$0.865

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$0.865

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DigiPath Technology Company

USA . 1,649 parts In-Stock

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AZTECH Wire

Italy . 406 parts In-Stock

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$10.240

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Perfect Parts

USA . 6,037 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,440 parts In-Stock

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Corphita

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Parana Technologies

USA . 525 parts In-Stock

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$0.550

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Overview

Elevate your designs with the STK822 from STMicroelectronics, a powerhouse N-channel FET that combines cutting-edge technology with unmatched reliability. Ideal for switching applications, this compact surface mount device offers exceptional performance with high current handling and low on-resistance. Trust in STMicroelectronics' legacy of quality and innovation to enhance efficiency in your power management solutions, ensuring your projects stand out with superior durability and value.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically provide better performance with lower on-resistance, making them suitable for high-efficiency applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for complete integration in circuits, improving design simplicity and reliability.

Transistor Application: SWITCHING

Designed for switching applications, this FET can efficiently control power and drive loads with minimal losses.

Surface Mount: YES

Surface mount technology facilitates compact design and easy assembly in modern electronic devices.

Minimum DS Breakdown Voltage: 25 V

A breakdown voltage of 25V ensures robustness in various operational environments, protecting against voltage spikes.

Package Shape: RECTANGULAR

Rectangular package design enables effective heat dissipation and optimizes the layout on the PCB.

Terminal Form: NO LEAD

No lead design enhances solder compatibility and reduces space on the PCB, accommodating tighter layouts.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for better performance in low-power applications by drawing minimal current when off.

Maximum Pulsed Drain Current (IDM): 152 A

The ability to handle 152 A of pulsed drain current makes this FET ideal for high-power applications and transient conditions.

Avalanche Energy Rating (EAS): 500 mJ

A high avalanche energy rating ensures that this FET can withstand high energy during fault conditions without failure.

Maximum Drain Current (Abs) (ID): 38 A

With a maximum drain current of 38 A, this FET can handle a significant load, suitable for demanding applications.

No. of Terminals: 4

The four-terminal configuration allows for versatile connections in circuit designs, enhancing flexibility and functionality.

Maximum Power Dissipation (Abs): 5.2 W

A high power dissipation rating (5.2 W) helps in managing heat effectively, critical for reliability in high-load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package allows for efficient space usage on circuit boards, which is critical for modern compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides high input impedance and low power consumption, making it ideal for digital control applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows this FET to perform reliably in high-temperature environments.

Transistor Element Material: SILICON

Silicon is a well-established material for FETs, providing good electrical performance and thermal stability.

Maximum Drain Current (ID): 38 A

This specification mirrors the capability of handling rigorous load conditions, making it suitable for large current applications.

Maximum Drain-Source On Resistance: 0.003 ohm

Extremely low on-resistance ensures minimal power loss during operation, contributing to overall efficiency in the circuit.

Terminal Position: DUAL

Dual terminal positions enhance layout flexibility, aiding efficient routing on printed circuit boards.

Case Connection: SOURCE

Source connection design simplifies circuit integration and enhances performance stability.

Technical Specifications

Power Field Effect Transistors (FET) STK822 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

500 mJ

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

38 A

Maximum Drain Current (ID):

38 A

Maximum Drain-Source On Resistance:

.003 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XDSO-N4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

152 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STK822 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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