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STK820

STMicroelectronics

STK820 by STMicroelectronics

STK820 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 84 A, a breakdown voltage of 25 V, and operates at up to 150 °C. Ideal for compact power management in electronics.

Median Price

$1.181

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8,263 parts In-Stock

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$1.181

8,263

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Distributors (In-Stock)

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Vyrian

USA . 1,799 parts In-Stock

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$1.181

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1,799

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Bristol Electronics

USA . 11,774 parts In-Stock

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Lakeland Logistics Inc

USA . 9,000 parts In-Stock

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R&J Components

USA . 3,000 parts In-Stock

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Digiode

USA . 2,137 parts In-Stock

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Anansix

USA . 1,231 parts In-Stock

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Zilex Electronics Inc.

Canada . 20 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,569 parts In-Stock

1+ parts

$0.900

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$0.810

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1,569

$0.900

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$0.810

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MKK Technologies

India . 1,794 parts In-Stock

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$1.692

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DigiPath Technology Company

USA . 1,794 parts In-Stock

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$1.692

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$2.124

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$1.933

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$1.742

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$1.933

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Microchip USA

USA . 297 parts In-Stock

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$8.292

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297

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Component Stockers USA

USA . 557 parts In-Stock

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$99.990

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557

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Perfect Parts

USA . 9,255 parts In-Stock

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Alle Elektronik GmbH

Germany . 8,263 parts In-Stock

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Corphita

USA . 1,868 parts In-Stock

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Parana Technologies

USA . 329 parts In-Stock

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$1.076

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Overview

Elevate your designs with the STK820 from STMicroelectronics, a trusted leader in semiconductor innovation. This N-channel power FET combines superior efficiency and reliability for switching applications, ensuring optimal performance even under demanding conditions. With its compact size and built-in diode, it seamlessly fits into various electronic systems, delivering exceptional value and durability that engineers can count on to power their next breakthrough.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

The N-channel configuration allows for higher efficiency and better switching performance, making this transistor ideal for various power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The inclusion of a built-in diode enhances reliability by providing flyback protection, especially useful in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET ensures quick response times, making it suitable for high-frequency environments.

Surface Mount: YES

Surface mount technology facilitates easy integration into compact circuits, optimizing space and improving electronic assembly efficiency.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25 V, this transistor can handle a broad range of voltage applications, enhancing versatility.

Package Shape: RECTANGULAR

The rectangular package shape is designed for efficient heat dissipation and effective PCB layout, providing robust physical stability.

Terminal Form: NO LEAD

No lead design reduces the footprint, contributing to a more compact electronic design while maintaining high performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for lower power requirements, making it energy-efficient during activation and enhancing battery life in portable applications.

Maximum Pulsed Drain Current (IDM): 84 A

A high pulsed drain current rating of 84 A supports peak performance in high-current switching applications, ensuring reliability under load.

Avalanche Energy Rating (EAS): 600 mJ

With an avalanche energy rating of 600 mJ, this FET is resilient against unexpected voltage spikes, adding another layer of durability.

Maximum Drain Current (Abs) (ID): 21 A

The ability to handle up to 21 A continuously ensures stable performance in demanding conditions, making it suitable for power-intensive operations.

No. of Terminals: 4

Having four terminals allows for more flexible circuit designs and symmetrical layouts, enhancing connectivity options.

Maximum Power Dissipation (Abs): 5.2 W

A maximum power dissipation capacity of 5.2 W makes this FET suitable for applications requiring controlled thermal management.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces circuit board space and weight, making it ideal for portable devices and compact electronics.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOSFET technology allows for higher input impedance and reduced power loss, which is crucial for efficient circuit design.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows for use in high-temperature environments, expanding its application range in harsh conditions.

Transistor Element Material: SILICON

Made from silicon, this component offers excellent performance, reliability, and versatility, being the most common material for FETs.

Terminal Finish: MATTE TIN

Matte tin terminal finish improves solderability and corrosion resistance, ensuring durable connections in various operational conditions.

Maximum Drain Current (ID): 21 A

Reaffirming a continuous drain current rating of 21 A, this feature ensures effective heat dispersal and efficiency during operation.

Maximum Drain-Source On Resistance: 0.008 ohm

With a low on-resistance of 0.008 ohm, this FET minimizes power loss and enhances overall efficiency during operation.

Terminal Position: DUAL

A dual terminal position allows for better layout flexibility on PCBs, facilitating easier integration into complex designs.

Case Connection: SOURCE

Source connection at the case simplifies circuit design and enables efficient signal processing, crucial for high-frequency applications.

Technical Specifications

Power Field Effect Transistors (FET) STK820 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

600 mJ

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

21 A

Maximum Drain Current (ID):

21 A

Maximum Drain-Source On Resistance:

.008 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XDSO-N4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

84 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STK820 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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