Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STF7NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
Median Price
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Lifecycle Status
Suppliers In-Stock
7
In-Stock Inventory
1k+
Vyrian
1+ parts
100+ parts
1k+ parts
10k+ parts
Anansix
Lakeland Logistics Inc
Bristol Electronics
Zilex Electronics Inc.
Digiode
ComSIT Distribution GmbH
IDEA Electronic Components Group
$0.485
$0.436
MKK Technologies
$0.912
DigiPath Technology Company
AZTECH Wire
$3.860
$3.710
$3.630
$3.560
Metaverse IC Inc.
QUARKTWIN TECHNOLOGY LTD
Kepictronics
Corphita
Authorized Procurement Solutions
Alle Elektronik GmbH
A-Z Elektronik GmbH
Perfect Parts
Parana Technologies
$0.580
The use of plastic/epoxy material ensures lightweight design and excellent thermal stability.
N-channel transistors generally offer higher efficiency and are preferred for switching applications due to lower on-resistance.
A built-in diode provides additional protection against reverse voltage, improving reliability in switching applications.
Designed specifically for switching, this FET is ideal for various applications including power management and control.
A high breakdown voltage indicates the ability to handle significant voltage levels, making it suitable for high-voltage applications.
Rectangular packaging optimizes layout and space efficiency on circuit boards, allowing for compact designs.
Through-hole terminal form ensures strong mechanical connections and is preferable for high power applications.
Enhancement mode functionality allows for better control and reduced leakage current in off states.
A high pulsed drain current capability allows this FET to handle short bursts of high power efficiently.
This rating indicates good performance under avalanche conditions, enhancing overall reliability in transient situations.
This specification indicates that the FET can handle a robust current, making it suitable for various applications without risk of damage.
The three-terminal design allows for easy integration into circuits, providing a simplified connection and layout.
A high power dissipation capability allows for effective heat management, ensuring stable performance during operation.
Flange mount design provides a secure attachment to heatsinks, contributing to better thermal management and device longevity.
MOS technology offers high input impedance and low power consumption, making it effective for modern electronic circuits.
A high operating temperature tolerance enhances reliability and expands the range of applications in harsh environments.
Silicon as a base material provides excellent electrical properties, contributing to overall efficiency and performance.
This rating provides confidence in the FET's capability to conduct significant currents, suitable for many power applications.
Low on-resistance ensures efficient power delivery and minimal energy losses in operating conditions.
Single terminal positioning simplifies circuit design, making installation and repairs straightforward.
Isolation of the case connection enhances safety and prevents malfunction due to unintended ground loops.
Power Field Effect Transistors (FET) STF7NM50N attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
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JESD-30 Code:
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Operating Mode:
Maximum Operating Temperature:
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Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
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STF7NM50N Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
M39029/58-360
Amphenol
CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;
MBRS130LT3G
Onsemi
MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.
SS495ASP
Micro Switch
The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.
LM7805CT/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Max): 125 Cel; Maximum Output Voltage-1: 5.25 V;
FT232RQ-REEL
FTDI
FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.
2N7002
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
1N4148
Transys Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
Formosa Microsemi
SMBJ18CA
Semitron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
MICRODIODE ELECTRONICS SHENZHEN CO LTD
Kingwell Technonlogy
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM358N
Yangzhou Yangjie Electronics
Calogic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
SI7611DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7611DN-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 40V DS breakdown voltage, 20A pulsed drain current, and 0.025 ohm max drain-source resistance. Ideal for high-power applications requiring efficient switching with a max power dissipation of 39W in a small outline package.
IRLML2502GTRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 33 A;
IRF7103TRPBF
Infineon Technologies
IRF7103TRPBF by Infineon Technologies is a N-CHANNEL Power FET with 50V DS Breakdown Voltage and 3A Drain Current. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring a 0.13 ohm On Resistance. This small outline transistor has 2 elements with built-in diode, operating up to 150°C.
FDMS86263P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 70 A;
ZXMP10A18GTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
FDB2532
FDB2532 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 79A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 400mJ and can handle up to 310W power dissipation.
NDT452AP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
IRLML6402
IRLML6402 by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM, 11mJ EAS, and 0.065 ohm RDS(ON). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
FQB22P10TM
FQB22P10TM by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, 88A IDM, and 0.125 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE in a RECTANGULAR package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has an EAS of 710 mJ and can handle up to 125W power dissipation at 175°C.
NX3008NBKW,115
NXP Semiconductors
NX3008NBKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.35A and power dissipation of 0.31W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C such as power management systems.
IRFZ44NLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Terminals: 3;
IRF9640STRLPBF
Vishay Intertechnology's IRF9640STRLPBF is a P-CHANNEL FET with 200V DS breakdown voltage and 44A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 0.5 ohm on-resistance and 125W power dissipation.
FDC5614P
FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
STD35P6LLF6
STMicroelectronics
STD35P6LLF6 by STMicroelectronics is a P-CHANNEL FET with 60V DS breakdown voltage, 140A IDM, and 0.036 ohm RDS(on). It is used for switching applications in enhancement mode with a max power dissipation of 70W.
FQP3P50
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; No. of Terminals: 3; Transistor Application: SWITCHING;
AUIRF3205ZSTRL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Drain Current (ID): 75 A; Operating Mode: ENHANCEMENT MODE;
IRF9530NPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; Maximum Drain-Source On Resistance: .2 ohm; Maximum Pulsed Drain Current (IDM): 56 A;
BSC160N15NS5ATMA1
BSC160N15NS5ATMA1 by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 224A and 0.016 ohm Drain-Source On Resistance. The transistor's METAL-OXIDE SEMICONDUCTOR technology and SILICON material make it reliable for high-power operations.
NTD3055-094T4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
IRFP4568PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 517 W; Terminal Finish: MATTE TIN OVER NICKEL; Peak Reflow Temperature (C): 250;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
STF7N60M2
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STF7LN80K5
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
STF7N105K5
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Drain Current (ID): 4 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STF7N52DK3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 150 Cel;
STF7N52K3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
STF7N60DM2
STF7N65M2
STF7N65M6
STF7N80K5
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Drain Current (ID): 6 A; JESD-609 Code: e3;
STF7N90K5
STF7N95K3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 220 mJ;
STF7NK30Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
STF7NK85Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Qualification: Not Qualified; JEDEC-95 Code: TO-220AB;
STF7NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 119 mJ;
STF7NM80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Avalanche Energy Rating (EAS): 240 mJ; JESD-30 Code: R-PSFM-T3;
Supply Digital Components
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