Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STW12NM60N
STMicroelectronics
STW12NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 10A max drain current. It offers a low on-resistance of 0.41Ω and operates at up to 150 °C. This versatile FET is packaged in a flange mount design for easy integration.
200 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
600 V
10 A
.41 ohm
METAL-OXIDE SEMICONDUCTOR
TO-247
R-PSFM-T3
e3/e1
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
90 W
40 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN/TIN SILVER COPPER
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
PD85035-E
PD85035-E by STMicroelectronics is an N-channel FET designed for amplification applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates at up to 165 °C. Ideal for compact power management in surface mount designs.
HIGH RELIABILITY
SOURCE
40 V
8 A
R-PDSO-G2
e3
2
165 Cel
SMALL OUTLINE
95 W
YES
MATTE TIN
GULL WING
DUAL
AMPLIFIER
PD85035S-E
PD85035S-E by STMicroelectronics is an N-channel FET designed for amplification applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates at up to 165 °C. Ideal for compact power management in surface mount designs.
R-PDSO-F2
FLAT
PD85035STR-E
PD85035STR-E by STMicroelectronics is an N-channel FET designed for amplification applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates at up to 165 °C. This compact surface mount transistor ensures efficient power management in electronic circuits.
PD85035TR-E
PD85035TR-E by STMicroelectronics is an N-channel FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates at up to 165 °C. This surface-mount transistor ensures efficient power management in compact designs.
STD100N3LF3
STD100N3LF3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
500 mJ
30 V
80 A
.0055 ohm
R-PSSO-G2
175 Cel
260
110 W
320 A
STF17NF25
STF17NF25 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
100 mJ
ISOLATED
250 V
17 A
.165 ohm
TO-220AB
25 W
68 A
STI17NF25
STI17NF25 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
TO-262AA
R-PSIP-T3
IN-LINE
245
40
STB300NH02L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 120 A; Maximum Pulsed Drain Current (IDM): 480 A;
1600 mJ
24 V
120 A
.0018 ohm
300 W
480 A
STP300NH02L
STP300NH02L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 24 V, and power dissipation up to 300 W. Ideal for high-efficiency power management in various electronic devices.
.0022 ohm
VNB35N0713TR
VNB35N0713TR from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max power dissipation of 125 W, a breakdown voltage of 60 V, and an on-resistance of just 0.035 Ω. Ideal for compact electronic devices, it ensures reliable performance in surface mount configurations.
COMPLEX
60 V
.035 ohm
TO-263
125 W
30
1350 ns
800 ns
STP160N75F3
STP160N75F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 75 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.
75 V
.0045 ohm
330 W
Matte Tin (Sn)
STP30NM30N
STP30NM30N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, breakdown voltage of 300 V, and power dissipation up to 160 W. Ideal for high-efficiency circuits in various electronic devices.
900 mJ
300 V
30 A
.09 ohm
160 W
TIN
STP5NK65ZFP
STP5NK65ZFP from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 18A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE RATED
170 mJ
650 V
4.5 A
1.8 ohm
18 A
STS2DPF80
STS2DPF80 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features an 80V breakdown voltage, max drain current of 2A, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
80 V
2 A
.25 ohm
R-PDSO-G8
8
P-CHANNEL
2.5 W
Other Transistors
STV160NF02LAT4
STV160NF02LAT4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 160 A, low on-resistance of 0.0037 Ω, and operates at a breakdown voltage of 20 V. Ideal for high-performance power management in compact designs.
330 mJ
20 V
160 A
.0037 ohm
R-PDSO-G10
10
640 A
STV160NF03LAT4
STV160NF03LAT4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 160 A, low on-resistance of 0.004 Ω, and a breakdown voltage of 30 V. Ideal for power management in compact electronic devices.
.004 ohm
STV300NH02L
STV300NH02L by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 280 A, a breakdown voltage of 24 V, and operates at temperatures from -55 °C to 175°C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
2296 mJ
280 A
.001 ohm
R-XDSO-G10
-55 Cel
UNSPECIFIED
250
1120 A
STW160N75F3
STW160N75F3 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 75 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.
TO-247AB
STB185N55F3
STB185N55F3 by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 55V DS Breakdown Voltage, 120A Drain Current, and 0.0035 ohm On Resistance. With 480A Pulsed Drain Current, it operates in ENHANCEMENT MODE with 175°C Max Temp.
ULTRA-LOW RESISTANCE
1000 mJ
55 V
.0035 ohm
STB85NS04Z
STB85NS04Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 33 V, and low on-resistance of 0.015 Ω. Ideal for high-performance power management in various electronic devices.
550 mJ
33 V
60 A
.015 ohm
STP13NK50Z
STP13NK50Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 11A max drain current, and 140W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
240 mJ
500 V
11 A
.48 ohm
140 W
44 A
STB16NM50N
STB16NM50N from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
470 mJ
15 A
.26 ohm
TO-263AB
STF16NM50N
STF16NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 15A. It operates in enhancement mode with a low on-resistance of 0.26Ω. Ideal for high-power circuits, it ensures efficient performance up to 150 °C.
30 W
STI16NM50N
STI16NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STP16NF25
STP16NF25 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 13 A and a breakdown voltage of 250 V. It operates in enhancement mode with a power dissipation of up to 90 W. This versatile transistor is suitable for various electronic circuits.
13 A
.235 ohm
52 A
STP16NM50N
STP16NM50N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW16NM50N
STW16NM50N by STMicroelectronics is an N-channel FET ideal for switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Its robust design ensures reliability in high-power circuits.
STB23NM60N
STB23NM60N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 19A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
700 mJ
19 A
.18 ohm
150 W
76 A
STD60N3LH5
STD60N3LH5 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 48A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 192A Pulsed Drain Current, and 0.0114 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 60W and can withstand temperatures up to 175°C.
160 mJ
48 A
.0114 ohm
TO-252
60 W
192 A
Matte Tin (Sn) - annealed
STF23NM60N
STF23NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
35 W
STI23NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSIP-T3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STP23NM60N
STP23NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and a max drain current of 19A. It offers a low on-resistance of 0.18Ω and operates at up to 150 °C. This robust FET is suitable for high-power circuits.
STU60N3LH5
STU60N3LH5 by STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 48 A, a breakdown voltage of 30 V, and operates at temperatures from -55 °C to 175°C. Its compact design ensures efficient power management in various electronic devices.
TO-251
STW23NM60N
STW23NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STB200N4F3
STB200N4F3 from STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
862 mJ
STB230NH03L
STB230NH03L by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, breakdown voltage of 30 V, and power dissipation up to 300 W. Ideal for compact designs with its surface mount configuration.
1150 mJ
.003 ohm
1000 A
STB50NF25
STB50NF25 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 45 A, a breakdown voltage of 250 V, and operates at temperatures from -55 °C to 150°C. Ideal for power management in compact designs.
45 A
.069 ohm
180 A
STB15NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 14 A;
300 mJ
14 A
.299 ohm
56 A
STF11NM65N
STF11NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 650V breakdown voltage and 12A max drain current. It operates in enhancement mode with a low on-resistance of 0.38Ω. Ideal for high-efficiency power management solutions.
12 A
.38 ohm
STF15NM60N
STF15NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STI15NM60N
STI15NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STP11NM65N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
STP15NM60N
STP15NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 14A max drain current, and 125W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STP180N55F3
STP180N55F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 55 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.
.0038 ohm
STW15NM60N
STW15NM60N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 14A max drain current. It offers a low on-resistance of 0.299Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
STB11NM60N-1
STB11NM60N-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 90W power dissipation. This versatile component operates efficiently in high-temperature environments up to 150 °C.
.45 ohm
STP200N4F3
STP200N4F3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
.0044 ohm
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