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STMicroelectronics Power Field Effect Transistors (FET) 1,058

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STHU32N65DM6AG by STMicroelectronics

STHU32N65DM6AG

STMicroelectronics

STHU32N65DM6AG by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a 650V breakdown voltage, 120A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for high-power circuits, it ensures efficient performance in compact designs.

778 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

37 A

.097 ohm

METAL-OXIDE SEMICONDUCTOR

.3 pF

R-PSSO-G7

e4

1

1

7

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

320 W

120 A

AEC-Q101

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

SINGLE

SWITCHING

SILICON

SGT120R65AL by STMicroelectronics

SGT120R65AL

STMicroelectronics

SGT120R65AL by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage and 36A IDM. It is used for SWITCHING applications, operating in ENHANCEMENT MODE with a max power dissipation of 192W. This transistor features GALLIUM NITRIDE material and can handle up to 15A drain current.

BULK: 3000

DRAIN

SINGLE

650 V

15 A

.12 ohm

HIGH ELECTRON MOBILITY

.9 pF

R-PDSO-F8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

192 W

36 A

YES

FLAT

DUAL

SWITCHING

GALLIUM NITRIDE