Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STH140N6F7-6
STMicroelectronics
STH140N6F7-6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for power management in compact designs.
BULK: 1000
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
80 A
.0032 ohm
METAL-OXIDE SEMICONDUCTOR
193 pF
R-PSSO-G6
1
6
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
158 W
320 A
YES
GULL WING
SINGLE
SWITCHING
SILICON
STFU15NM65N
STFU15NM65N by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 48A IDM, and 0.38 ohm max RDS(on). Ideal for switching applications in enhancement mode operation. Package body material PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.
187 mJ
ISOLATED
650 V
12 A
.38 ohm
TO-220AB
R-PSFM-T3
e3
3
FLANGE MOUNT
48 A
NO
MATTE TIN
THROUGH-HOLE
STB34N50DM2AG
STB34N50DM2AG by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a 500V breakdown voltage, 26A max drain current, and operates efficiently up to 150 °C. Ideal for power management in automotive and industrial systems.
700 mJ
500 V
26 A
.12 ohm
TO-263AB
R-PSSO-G2
2
150 Cel
-55 Cel
245
104 A
AEC-Q101
STL20NF06LAG
STL20NF06LAG by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and operates at temperatures from -55 °C to 175 °C. Ideal for power management in compact designs.
210 mJ
20 A
.05 ohm
R-PDSO-F5
5
75 W
FLAT
DUAL
STL58N3LLH5
STL58N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 64 A, a breakdown voltage of 30 V, and operates in enhancement mode. Ideal for automotive and industrial uses, it ensures reliable performance under extreme temperatures.
150 mJ
30 V
64 A
.0112 ohm
62.5 W
224 A
VNV35N07-E
VNV35N07-E by STMicroelectronics is a robust N-channel FET designed for high-efficiency applications. It features a max drain current of 35 A, breakdown voltage of 60 V, and low on-resistance of 0.035 Ω. Ideal for power management in automotive and industrial systems.
COMPLEX
35 A
.035 ohm
R-PDSO-G10
10
125 W
1350 ns
800 ns
STL20DNF06LAG
STL20DNF06LAG by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and low on-resistance of 0.05 Ω. Ideal for automotive and power management systems, it ensures reliable performance in compact designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-PDSO-F6
STF9N80K5
STF9N80K5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain-source voltage of 800V, a pulsed drain current of 28A, and operates from -55 °C to 150 °C. Ideal for power management in various electronic circuits.
800 V
7 A
.9 ohm
.65 pF
25 W
28 A
STF26N60M2
STF26N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 0.165 ohm RDS(on), and 250mJ EAS. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
250 mJ
600 V
.165 ohm
STD19N3LLH6AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Minimum Operating Temperature: -55 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
130 mJ
10 A
TO-252
30 W
40 A
STH290N4F6-2AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
40 V
180 A
.0017 ohm
720 A
STH290N4F6-6AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Minimum Operating Temperature: -55 Cel;
300 W
STL120N4LF6AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 96 W; Maximum Feedback Capacitance (Crss): 373 pF; Maximum Drain Current (ID): 55 A;
BULK: 3000
200 mJ
55 A
.0045 ohm
373 pF
R-PDSO-F8
8
96 W
220 A
STP27N60M2-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Avalanche Energy Rating (EAS): 260 mJ; No. of Terminals: 3;
260 mJ
.163 ohm
1 pF
170 W
STW27N60M2-EP
STW27N60M2-EP by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 260mJ EAS, and 0.163 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 170W and can withstand up to 150°C.
TO-247
STW33N60DM2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Drain Current (ID): 24 A; Maximum Drain-Source On Resistance: .13 ohm;
570 mJ
24 A
.13 ohm
190 W
96 A
STFI14N80K5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Transistor Application: SWITCHING; Maximum Operating Temperature: 150 Cel;
270 mJ
.445 ohm
.8 pF
TO-281
R-PSIP-T3
IN-LINE
STH272N6F7-6AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 333 W; Maximum Drain-Source On Resistance: .0015 ohm; JESD-30 Code: R-PSSO-G6;
1900 mJ
.0015 ohm
333 W
STS9P3LLH6
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 9 A;
9 A
.0225 ohm
R-PDSO-G8
P-CHANNEL
2.7 W
36 A
STH410N4F7-6AG
STH410N4F7-6AG by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 200 A, a breakdown voltage of 40 V, and operates at temperatures up to 175 °C. Ideal for power management in automotive and industrial systems.
200 A
.0011 ohm
390 pF
260
365 W
800 A
SCT10N120
SCT10N120 by STMicroelectronics is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage and 24A IDM. It is used for SWITCHING applications, featuring SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can handle up to 12A drain current.
1200 V
.69 ohm
9 pF
200 Cel
150 W
SILICON CARBIDE
STD180N4F6
STD180N4F6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
.0028 ohm
130 W
STP9N80K5
STP9N80K5 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain-source voltage of 800V and a pulsed drain current of 28A. It operates in enhancement mode with a power dissipation of up to 110W. This versatile transistor is suitable for high-temperature environments, ranging from -55 °C to 150 °C.
110 W
STW9N80K5
STW9N80K5 from STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain-source voltage of 800V and a pulsed drain current of 28A. It operates in enhancement mode with a power dissipation of up to 110W. Ideal for high-voltage circuits, it ensures reliable performance in demanding environments.
STU5N95K5
STU5N95K5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 950V breakdown voltage, 14A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE ENERGY RATED
70 mJ
950 V
3.5 A
2.5 ohm
TO-251AA
70 W
14 A
57 ns
28 ns
STD100N10LF7AG
STD100N10LF7AG from STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 100 V, and operates in an enhancement mode at temperatures up to 175 °C. Ideal for power management in automotive and industrial systems.
100 V
.011 ohm
STD134N4F7AG
STD134N4F7AG by STMicroelectronics is a high-performance N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates efficiently at temperatures up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
BULK: 2500
325 mJ
.0035 ohm
60 pF
134 W
STWA20N95DK5
STWA20N95DK5 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 950V breakdown voltage and 72A max pulsed drain current. It operates in enhancement mode with a power dissipation of up to 250W. This robust transistor ensures reliable performance in demanding environments.
520 mJ
18 A
.33 ohm
5 pF
250 W
72 A
STD80N6F7
STD80N6F7 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 40 A, a breakdown voltage of 60 V, and operates at temperatures from -55 °C to 175 °C. Ideal for power management in compact designs.
60 mJ
.008 ohm
50 pF
100 W
160 A
STL225N6F7AG
STL225N6F7AG by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 480A IDM, and 0.0014 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 188W power dissipation, -55 to 175 °C operating temp range, and DUAL terminal position.
120 A
.0014 ohm
188 W
480 A
STP80NF55-08AG
STP80NF55-08AG by STMicroelectronics is a N-channel power FET with 55V DS breakdown voltage and 80A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 300W, this MOSFET has a package style of flange mount and can withstand temperatures up to 175°C.
1000 mJ
55 V
SCTW90N65G2V
SCTW90N65G2V by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 220A Max Pulsed Drain Current and 390W Max Power Dissipation. Operating in ENHANCEMENT MODE, it has a temperature range of -55 to 200°C.
110 A
390 W
STP36N60M6
STP36N60M6 by STMicroelectronics is a Power FET with 600V DS Breakdown Voltage, 102A IDM, and 0.099 ohm RDS(on). It's an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. The package is RECTANGULAR with THROUGH-HOLE terminals, suitable for FLANGE MOUNT installation.
750 mJ
30 A
.099 ohm
102 A
STH47N60DM6-2AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Reference Standard: AEC-Q101; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.08 ohm
2 pF
137 A
STI47N60DM6AG
STI47N60DM6AG from STMicroelectronics is a robust N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 36A max drain current. It offers high power dissipation of 250W and operates efficiently in -55 °C to 150 °C. Ideal for demanding power management tasks.
STL38DN6F7AG
STL38DN6F7AG by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 10 A, a breakdown voltage of 60 V, and operates at temperatures up to 175 °C. Ideal for power management in compact electronic devices.
50 mJ
.027 ohm
7.9 pF
57.7 W
STI18N60M2
STI18N60M2 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 600V breakdown voltage, 13A max drain current, and built-in diode. Ideal for power management in various electronic circuits, it ensures efficient performance.
135 mJ
13 A
.28 ohm
52 A
STL285N4F7AG
STL285N4F7AG by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
280 mJ
35 pF
STWA40N60M2
STWA40N60M2 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 136A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for high-power circuits with robust performance.
500 mJ
34 A
.088 ohm
2.4 pF
136 A
SCTW40N120G2VAG
SCTW40N120G2VAG by STMicroelectronics is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. It has a max IDM of 100A and 0.105 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 290W.
33 A
.105 ohm
15 pF
290 W
100 A
STL9N65M2
STL9N65M2 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 12A pulsed drain current, and operates in enhancement mode. Ideal for high-power circuits, it supports surface mount configurations.
95 mJ
4.5 A
1 ohm
S-XQCC-N12
12
UNSPECIFIED
SQUARE
CHIP CARRIER
46 W
NO LEAD
QUAD
STP20N60M2-EP
STP20N60M2-EP by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 52A max pulsed drain current, and operates from -55 °C to 150 °C. Ideal for power management in various electronic devices.
138 mJ
.278 ohm
SCTWA35N65G2V-4
SCTWA35N65G2V-4 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 0.067 ohm RDS(on), and 240W Pdiss, operating in ENHANCEMENT MODE at -55 to 200°C. The transistor has a RECTANGULAR package with THROUGH-HOLE terminals and METAL-OXIDE SEMICONDUCTOR technology.
45 A
.067 ohm
30 pF
R-PSFM-T4
4
240 W
90 A
SCTWA90N65G2V-4
SCTWA90N65G2V-4 by STMicroelectronics is a N-channel power FET with 650V DS breakdown voltage and 220A max pulsed drain current. It is used for switching applications, operating in enhancement mode with a max power dissipation of 565W. The transistor features a silicon carbide element material and metal-oxide semiconductor technology, suitable for high-power requirements in various industries.
119 A
.024 ohm
49 pF
565 W
STFH12N105K5
STFH12N105K5 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a 1050V breakdown voltage, 15A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Its compact design ensures efficient performance in various electronic circuits.
850 mJ
1050 V
8 A
.6 pF
29 W
15 A
Matte Tin (Sn)
STK130N4LF7AG
STK130N4LF7AG by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 40 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance power management in compact designs.
.006 ohm
33 pF
R-PSSO-G4
105 W
400 A
SCTH50N120-7
SCTH50N120-7 by STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 1200V breakdown voltage and 65A max drain current. It operates in enhancement mode with a low on-resistance of 0.069Ω. Ideal for high-efficiency power management in compact designs.
65 A
.069 ohm
R-PSSO-G7
7
270 W
130 A
STWA75N65DM6
STWA75N65DM6 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 75A max drain current, and 480W power dissipation. Ideal for high-efficiency power management in various electronic devices.
75 A
.036 ohm
3 pF
480 W
280 A
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