Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STB40N20
STMicroelectronics
STB40N20 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 40 A, breakdown voltage of 200 V, and power dissipation up to 160 W. Ideal for high-performance power management in compact designs.
230 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
200 V
40 A
.045 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
160 W
160 A
Not Qualified
FET General Purpose Power
YES
Matte Tin (Sn)
GULL WING
SINGLE
SWITCHING
SILICON
STB60NF10T4
STB60NF10T4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, breakdown voltage of 100 V, and power dissipation up to 300 W. Ideal for high-performance power management in compact designs.
485 mJ
100 V
80 A
.023 ohm
TO-263AB
175 Cel
245
300 W
320 A
Matte Tin (Sn) - annealed
30
STF40N20
STF40N20 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 40 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Its compact design ensures efficient performance in power management systems.
ISOLATED
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
40 W
NO
MATTE TIN
THROUGH-HOLE
STF9NK80Z
STF9NK80Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain-source voltage of 800V, a pulsed drain current of 30A, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE RATED
350 mJ
800 V
7.5 A
1.2 ohm
35 W
30 A
TIN
STL100NH3LL
STL100NH3LL by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 100A IDM, and 0.005 ohm RDS(on). Suitable for surface mount with built-in diode, it operates in enhancement mode up to 150°C.
150 mJ
30 V
100 A
25 A
.005 ohm
R-XDSO-N5
5
UNSPECIFIED
80 W
NO LEAD
DUAL
STP270N04
STP270N04 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0029 Ω).
1000 mJ
40 V
120 A
.0029 ohm
330 W
480 A
STP95N04
STP95N04 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0065 Ω).
400 mJ
.0065 ohm
110 W
STP9NK80Z
STP9NK80Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 7.5 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 150 W. This robust transistor is suitable for high-voltage circuits.
150 W
STS3DPF60L
STS3DPF60L by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a 60V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
LOW THRESHOLD
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
60 V
3 A
.16 ohm
R-PDSO-G8
e4
8
P-CHANNEL
2 W
12 A
Other Transistors
NICKEL PALLADIUM GOLD
STS4C3F60L
STS4C3F60L by STMicroelectronics is a versatile N/P-channel FET designed for efficient switching applications. It features a 60V breakdown voltage, max drain current of 4A, and operates at up to 150 °C. Ideal for compact power management in electronics.
4 A
.065 ohm
N-CHANNEL AND P-CHANNEL
16 A
STP120NH03L
STP120NH03L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
700 mJ
60 A
.0105 ohm
115 W
240 A
40
STD2NK70Z-1
STD2NK70Z-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 700V breakdown voltage, 6.4A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
110 mJ
700 V
1.6 A
7 ohm
TO-251
R-PSIP-T3
IN-LINE
260
45 W
6.4 A
STD2NK70ZT4
STD2NK70ZT4 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 700V breakdown voltage, 6.4A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
TO-252AA
STP5NK90Z
STP5NK90Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 900V breakdown voltage and a max drain current of 4.5A. It operates in enhancement mode with a power dissipation of up to 125W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
900 V
4.5 A
2.5 ohm
125 W
18 A
STB5NK52ZD-1
STB5NK52ZD-1 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 520V breakdown voltage, 17.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
170 mJ
520 V
4.4 A
1.5 ohm
TO-262AA
NOT SPECIFIED
70 W
17.6 A
STD5NK52ZD-1
STD5NK52ZD-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.4 A, a breakdown voltage of 520 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
TO-251AA
STD5NK52ZD
STD5NK52ZD by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.4 A, a breakdown voltage of 520 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STB75N20
STB75N20 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 75 A, breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for high-efficiency power management in compact designs.
205 mJ
75 A
.034 ohm
190 W
300 A
STB8NM60D
STB8NM60D by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 32A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
200 mJ
600 V
8 A
1 ohm
100 W
32 A
STD4NK50ZD-1
STD4NK50ZD-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
120 mJ
500 V
2.7 ohm
STD4NK50ZD
STD4NK50ZD by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 12A pulsed drain current, and operates at up to 150 °C. Ideal for compact designs with its surface mount configuration.
TO-252
STF4NK50ZD
STF4NK50ZD by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and a max drain current of 3A. It operates in enhancement mode with a power dissipation of up to 20W. This versatile transistor is suitable for various electronic circuits.
20 W
STFV4N150
STFV4N150 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 1500V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for high-voltage power management in various electronic devices.
1500 V
STP4NK50ZD
STP4NK50ZD by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 12A pulsed drain current. It operates in enhancement mode with a max power dissipation of 45W. This versatile transistor is suitable for high-temperature environments up to 150 °C.
STP75N20
STP75N20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 300A IDM, and 0.034 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 190W and operates at temperatures up to 150°C.
STP8NM60D
STP8NM60D by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 8A max drain current. It offers a low on-resistance of 1Ω and operates at up to 150 °C. This versatile FET is suitable for various power management tasks.
STW120NF10
STW120NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has 440A IDM and 550mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.0105 ohm Drain-Source On Resistance and can handle up to 312W power dissipation.
550 mJ
110 A
TO-247
312 W
440 A
STW12NK95Z
STW12NK95Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 950V breakdown voltage, 40A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
500 mJ
950 V
10 A
.9 ohm
TO-247AC
230 W
STW75N20
STW75N20 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 75 A and a breakdown voltage of 200 V. It has a low on-resistance of 0.034 Ω and operates up to 150 °C. This robust transistor is suitable for high-power circuits.
STP30N20
STP30N20 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
140 mJ
.075 ohm
STW30N20
STW30N20 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 200 V, and low on-resistance of 0.075 Ω. Ideal for power management in various electronic devices.
STD36NH02L
STD36NH02L by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for compact power management in electronic devices.
24 V
.026 ohm
STD90N02L-1
STD90N02L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.006 Ω).
360 mJ
25 V
.006 ohm
STD90N02L
STD90N02L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
STK850
STK850 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 120 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
1400 mJ
SOURCE
.0035 ohm
R-XDSO-N4
4
5.2 W
STL60NH3LL
STL60NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
60 W
64 A
STK800
STK800 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
20 A
.0098 ohm
STB76NF75
STB76NF75 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 320A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175°C max temp. The transistor has a built-in diode, GULL WING terminals, and can handle up to 80A drain current.
75 V
.011 ohm
STB76NF80
STB76NF80 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features an 80V breakdown voltage, 320A pulsed drain current, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
80 V
STD70NS04ZL
STD70NS04ZL by STMicroelectronics is a N-CHANNEL Power FET with 33V DS Breakdown Voltage and 280A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0125 ohm RDS(on), and operates in ENHANCEMENT MODE. This surface mount transistor has a max power dissipation of 110W and can handle up to 70A ID.
650 mJ
33 V
70 A
.0125 ohm
280 A
STI76NF75
STI76NF75 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 75 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.011 Ω).
STL23NM60ND
STL23NM60ND by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 78A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
19.5 A
.18 ohm
S-XDSO-N4
SQUARE
78 A
STL60N32N3LL
STL60N32N3LL by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs with its no-lead surface mount package.
SERIES, 2 ELEMENTS
.12 ohm
R-PDSO-N4
50 W
48 A
STS15N4LLF5
STS15N4LLF5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 15 A, a breakdown voltage of 40 V, and low on-resistance of 0.0083 Ω. Ideal for compact power management in electronics.
1090 mJ
15 A
.0083 ohm
3 W
63.6 A
STS1DN45K3
STS1DN45K3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 450V breakdown voltage, 2A max pulsed drain current, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
SEPARATE, 2 ELEMENTS
450 V
.5 A
3.8 ohm
1.7 W
2 A
STB13NM60N
STB13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 44A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.36 ohm RDS(on) and 90W Pdiss. Suitable for surface mount, it has a max operating temperature of 150°C.
11 A
.36 ohm
90 W
44 A
STB95N3LLH6
STB95N3LLH6 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
.007 ohm
STD120N4F6
STD120N4F6 by STMicroelectronics is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 320A IDM, and 0.004 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 110W and can withstand temperatures up to 175°C.
394 mJ
.004 ohm
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