Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
STH360N4F6-2
STMicroelectronics
STH360N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates at up to 175 °C. Suitable for surface mount configurations, this MOSFET offers robust performance in demanding environments.
SINGLE
180 A
METAL-OXIDE SEMICONDUCTOR
1
175 Cel
N-CHANNEL
300 W
FET General Purpose Powers
YES
STI400N4F6
STI400N4F6 by STMicroelectronics is a N-CHANNEL Power FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C.
120 A
NOT SPECIFIED
NO
STP400N4F6
STMicroelectronics' STP400N4F6 is a N-CHANNEL FET with 120A max drain current and 300W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C, utilizing metal-oxide semiconductor technology for efficient performance.
STP80N6F6
STMicroelectronics' STP80N6F6 is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for demanding environments requiring efficient power management.
110 A
150 W
STP80N70F6
STMicroelectronics' STP80N70F6 is a N-CHANNEL Power FET with 96A ID and 110W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single-channel configurations.
96 A
110 W
STW23N85K5
STW23N85K5 by STMicroelectronics is a N-CHANNEL FET with 19A max drain current and 250W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C, featuring metal-oxide semiconductor technology and matte tin terminal finish.
19 A
e3
150 Cel
250 W
FET General Purpose Power
Matte Tin (Sn)
STE60N105DK5
STE60N105DK5 by STMicroelectronics is a N-CHANNEL FET with 44A ID and 625W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.
44 A
625 W
STH320N4F6-2
STH320N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 200A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
200 A
STL11N4LLF5
STL11N4LLF5 by STMicroelectronics is a N-CHANNEL FET with 40V DS breakdown voltage, 44A IDM, and 0.012 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 11A ID and 50W power dissipation. The transistor features a built-in diode, small outline package style, and can withstand temperatures up to 150 °C.
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
11 A
.012 ohm
S-PDSO-N8
8
ENHANCEMENT MODE
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
50 W
NO LEAD
DUAL
SWITCHING
SILICON
STW3N170
STW3N170 by STMicroelectronics is a N-CHANNEL FET with 2.3A max drain current and 160W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for various industrial and automotive uses.
2.3 A
160 W
STW57N65M5-4
STW57N65M5-4 by STMicroelectronics is a N-CHANNEL FET with 42A max drain current and 250W power dissipation. Ideal for high-power applications, it operates at up to 150°C.
42 A
STF10P6F6
STF10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.16 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.
80 mJ
60 V
7.2 A
.16 ohm
TO-251
R-PSIP-T3
3
RECTANGULAR
IN-LINE
P-CHANNEL
40 A
THROUGH-HOLE
STU10P6F6
STU10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.116 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
10 A
.116 ohm
35 W
STP9N60M2
STP9N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 22A IDM and 105mJ EAS, operating in enhancement mode. With 0.78 ohm RDS(on) and 60W power dissipation, it's suitable for high-power circuits requiring efficient performance.
105 mJ
600 V
5.5 A
.78 ohm
.68 pF
TO-220AB
R-PSFM-T3
-55 Cel
FLANGE MOUNT
60 W
22 A
STB18NM60ND
STB18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 52A IDM, and 0.29 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 130W power dissipation.
187 mJ
13 A
.29 ohm
TO-263AB
R-PSSO-G2
2
130 W
52 A
GULL WING
STF18NM60ND
STF18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 187mJ EAS, and 0.29 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 30W and can handle up to 150 °C.
ISOLATED
30 W
STF6N80K5
STF6N80K5 by STMicroelectronics is a N-CHANNEL FET with 4.5A max drain current and 25W power dissipation. Ideal for applications requiring high power efficiency in a single configuration, such as power supplies or motor control systems operating up to 150 °C.
4.5 A
25 W
STI33N60M2
STI33N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 104A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 190W, -50 to 150 °C operating temperature range, and 0.125 ohm Drain-Source On Resistance.
450 mJ
26 A
.125 ohm
2.5 pF
-50 Cel
190 W
104 A
STI6N80K5
STI6N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 18A IDM, 85mJ EAS, and 1.6Ω RDS(ON). The transistor operates in ENHANCEMENT MODE with SILICON element material and DRAIN case connection.
85 mJ
800 V
1.6 ohm
18 A
STL105NS3LLH7
STL105NS3LLH7 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 420A IDM, 0.0055 ohm RDS(on), and 62.5W Power Dissipation in a SMALL OUTLINE package suitable for ENHANCEMENT MODE operation at -55 to 150 °C.
BULK: 3000
30 V
105 A
.0055 ohm
42 pF
R-PDSO-F5
5
62.5 W
420 A
FLAT
STL110NS3LLH7
STL110NS3LLH7 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 480A IDM, 0.005 ohm RDS(on), and -55 °C Min Operating Temp. Its SINGLE configuration with BUILT-IN DIODE and DUAL Terminal Position make it suitable for various power management needs.
.005 ohm
480 A
STP13NM60ND
STP13NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 44A IDM, 162mJ EAS, and 0.38ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and SILICON element material.
162 mJ
.38 ohm
STP18NM60ND
STP18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 187mJ EAS, and 0.29 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 130W at 150 °C.
STP6N80K5
STP6N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, 18A IDM, and 1.6Ω RDS(on). It is used for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE in a RECTANGULAR package.
STU10N60M2
STU10N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 30A max pulsed drain current and 0.6 ohm max drain-source on resistance. Operating in enhancement mode, it has a power dissipation of 85W and can withstand temperatures from -55 to 150 °C.
110 mJ
7.5 A
.6 ohm
85 W
30 A
STW18NM60ND
STW18NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.29 ohm Drain-Source On Resistance, and 150 °C Max Operating Temp.
TO-247
STB28N60M2
STB28N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 88A IDM, and 0.15 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 170W.
350 mJ
.15 ohm
170 W
88 A
STDLED524
STDLED524 by STMicroelectronics is a N-CHANNEL Power FET with 525V DS Breakdown Voltage and 14A Pulsed Drain Current. Ideal for applications requiring high power dissipation, such as in industrial automation systems or LED lighting solutions.
525 V
4 A
2.6 ohm
TO-252
45 W
14 A
STF25N10F7
STF25N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 76A IDM, and 0.035 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
100 V
.035 ohm
19 pF
76 A
STFILED524
STFILED524 by STMicroelectronics is a N-CHANNEL Power FET with 525V DS Breakdown Voltage. It features 14A IDM, 110mJ EAS, and 20W Max Power Dissipation. Ideal for applications requiring high voltage tolerance and efficient power management in various electronic circuits.
TO-281
20 W
STH140N6F7-2
STH140N6F7-2 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage, 320A IDM, and 0.0032 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and can handle up to 175 °C operating temperature.
BULK: 1000
80 A
.0032 ohm
193 pF
158 W
320 A
STL23NS3LLH7
STL23NS3LLH7 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 368A IDM, and 0.005 ohm RDS(on). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. RECTANGULAR package style with DUAL terminals and built-in DIODE.
92 A
368 A
STL4P2UH7
STL4P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage, 16A IDM, and 0.18 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, operating at up to 150 °C.
20 V
.18 ohm
S-PDSO-F6
6
16 A
STP25N10F7
STP25N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage, 25A ID, and 0.035 ohm RDS(on). It's used for switching applications in enhancement mode with 100A IDM. Operating temp ranges from -55 to 175 °C.
25 A
100 A
STP90N6F6
STMicroelectronics' STP90N6F6 is a N-CHANNEL FET with 90A ID and 136W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors. Its metal-oxide semiconductor technology ensures efficient performance in single configurations.
90 A
136 W
STPLED524
STPLED524 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 14A IDM, and 110mJ EAS. It is used in power applications requiring high voltage tolerance and current handling capabilities.
STT3P2UH7
STT3P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage, 12A IDM, and 0.18 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor features GULL WING terminals, operates at -55 °C to support various electronic devices.
3 A
R-PDSO-G6
12 A
STU6N60M2
STU6N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 18A IDM and 86mJ EAS, operating in enhancement mode. With a max power dissipation of 60W and -55 to 150 °C operating temperature range, it offers reliable performance in various industrial settings.
86 mJ
1.2 ohm
.7 pF
MATTE TIN
STULED524
STULED524 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 14A IDM, and 110mJ EAS. Ideal for power applications requiring high voltage tolerance and current handling in industrial settings.
STW28N60M2
STW28N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 88A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 170W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
STW40N60M2
STW40N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 136A IDM, 0.088 ohm RDS(on), and 500mJ EAS rating. The transistor operates in ENHANCEMENT MODE with SINGLE configuration and BUILT-IN DIODE, suitable for high-power switching circuits.
500 mJ
34 A
.088 ohm
136 A
STB26NM60ND
STB26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 84A max pulsed drain current and 0.175 ohm max drain-source resistance. Operating in enhancement mode, it has a 190W power dissipation rating and can withstand up to 150°C temperature.
100 mJ
21 A
.175 ohm
84 A
STF26NM60ND
STF26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 84A IDM, 100mJ EAS, and 0.175 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 35W at 150°C.
STP140N8F7
STMicroelectronics' STP140N8F7 is a N-CHANNEL Power FET with 90A max drain current and 200W max power dissipation. Utilizes Metal-Oxide Semiconductor tech, operates up to 175 °C. Ideal for high-power applications requiring efficient switching capabilities.
200 W
STP15N95K5
STP15N95K5 by STMicroelectronics is a N-CHANNEL FET with 950V DS Breakdown Voltage, ideal for SWITCHING applications. It features 48A IDM and 124mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 170W and -55 to 150 °C operating temperature range, it offers high performance in various industrial settings.
124 mJ
950 V
.5 ohm
1 pF
48 A
STP26NM60ND
STP26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 84A max pulsed drain current and 0.175 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 190W and can handle up to 150 °C temperature.
STW26NM60ND
STW26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 84A max pulsed drain current, 100mJ avalanche energy rating, and 0.175 ohm max on-resistance. Operating in enhancement mode, it has a max power dissipation of 190W and can handle up to 150°C operating temperature.
STI34N65M5
STI34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 112A max pulsed drain current and 0.11 ohm max drain-source resistance. This MOSFET operates in enhancement mode at up to 150 °C, making it suitable for high-power tasks.
510 mJ
650 V
28 A
.11 ohm
TO-262AA
112 A
© 2023 All rights reserved
