Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
STY34NB50
STMicroelectronics
STY34NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 136A Max Pulsed Drain Current, 0.13 ohm Max RDS(on), and 1000mJ Avalanche Energy Rating. Suitable for high-power circuits requiring efficient switching capabilities.
AVALANCHE RATED
1000 mJ
SINGLE WITH BUILT-IN DIODE
500 V
34 A
.13 ohm
METAL-OXIDE SEMICONDUCTOR
TO-247
R-PSIP-T3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
NOT SPECIFIED
N-CHANNEL
450 W
136 A
Not Qualified
FET General Purpose Power
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STP5NB60
STP5NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 20A IDM, and 2 ohm RDS(on). It's used for switching applications in enhancement mode with a max power dissipation of 100W.
300 mJ
600 V
5 A
2 ohm
TO-220AB
R-PSFM-T3
e3
FLANGE MOUNT
100 W
20 A
MATTE TIN
STW38NB20
STW38NB20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 152A IDM, and 0.065 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 180W Pdiss and 150 °C Max Temp.
550 mJ
ISOLATED
200 V
38 A
.065 ohm
TO-247AC
180 W
152 A
STW13NB60
STW13NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 700mJ EAS, and 0.54 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 190W at 150 °C.
700 mJ
13 A
.54 ohm
190 W
52 A
STB60NE06L-16T4
STB60NE06L-16T4 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 240A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
LOW THRESHOLD
400 mJ
DRAIN
60 V
60 A
.016 ohm
TO-263AB
R-PSSO-G2
2
175 Cel
SMALL OUTLINE
150 W
240 A
YES
GULL WING
STP60NE06L-16
STP60NE06L-16 by STMicroelectronics is a N-channel FET with 60V DS breakdown voltage, 240A IDM, and 0.016 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175 °C.
STP19NB20
STMicroelectronics STP19NB20 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. It features 76A max pulsed drain current and 0.18 ohm max drain-source resistance. With a package style of flange mount, it operates in enhancement mode at up to 150 °C.
580 mJ
19 A
.18 ohm
125 W
76 A
STP4NB50
STP4NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 15.2A max pulsed drain current and 220mJ avalanche energy rating. The transistor operates in enhancement mode, with a max power dissipation of 80W at 150 °C.
220 mJ
3.8 A
2.8 ohm
e0
80 W
15.2 A
TIN LEAD
STP50NE08
STP50NE08 by STMicroelectronics is a N-CHANNEL FET with 80V DS Breakdown Voltage, 200A IDM, and 0.024 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C temperature range.
80 V
50 A
.024 ohm
200 A
TIN
STP50NE10
STP50NE10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 300mJ EAS, and 0.027 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power circuits.
100 V
.027 ohm
STP5NB40
STP5NB40 by STMicroelectronics is a N-CHANNEL FET with 400V DS Breakdown Voltage and 19A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 80W and operates in ENHANCEMENT MODE at up to 150 °C.
200 mJ
400 V
4.7 A
1.8 ohm
VNV35N07
VNV35N07 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.035 ohm Max RDS. It operates in Enhancement Mode, has 10 terminals, and can handle up to 125W power dissipation. Ideal for applications requiring high power handling in compact spaces like automotive electronics.
COMPLEX
.035 ohm
R-PDSO-G10
10
250
DUAL
30
1350 ns
800 ns
VNP35N07FI
VNP35N07FI by STMicroelectronics is an N-channel Power FET with a 60V DS breakdown voltage and 0.035 ohm max RDS(on). It operates in enhancement mode with 800ns turn-on time and 1350ns turn-off time. Ideal for power management applications requiring high efficiency and performance.
40 W
VNB35N07
VNB35N07 by STMicroelectronics is an N-channel Power FET with 60V DS breakdown voltage, 0.035 ohm RDS(on), and 125W power dissipation. Ideal for enhancement mode operation in applications requiring high efficiency and fast switching such as power supplies and motor control systems.
TO-263
STP60NE06-16
STP60NE06-16 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage and 240A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.016 ohm max RDS(on). Operating in enhancement mode, this MOSFET has a max power dissipation of 150W at 175°C.
350 mJ
STW50NB20
STW50NB20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 50A Drain Current, and 0.055 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with 280W Power Dissipation and 150 °C Operating Temperature.
.055 ohm
280 W
STD5N20T4
STD5N20T4 by STMicroelectronics is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.8 ohm RDS(on), and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 50W and can handle up to 5A drain current.
130 mJ
.8 ohm
TO-252AA
50 W
STB155N3LH6
STB155N3LH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.004 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W.
ULTRA-LOW RESISTANCE
525 mJ
30 V
80 A
.004 ohm
TO-252
245
110 W
320 A
Matte Tin (Sn) - annealed
STP20NE06L
STP20NE06L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 100mJ EAS, and 0.085 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 70W at 175 °C.
100 mJ
.085 ohm
70 W
STP4NB80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
230 mJ
800 V
4 A
3.3 ohm
16 A
STW80NE06-10
STW80NE06-10 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage, 320A IDM, and 0.01 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it has an EAS of 350mJ and can handle up to 180W power dissipation.
.01 ohm
STP80NE06-10
STP80NE06-10 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage and 80A max drain current. Ideal for switching applications, it features a built-in diode, 320A pulsed drain current, and 0.01 ohm max on-resistance. Suitable for enhancement mode operation in various power electronics systems.
250 mJ
STD30NE06LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 60 V;
30 A
.03 ohm
55 W
120 A
STD30NE06L
STD30NE06L by STMicroelectronics is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has a max ID of 30A and 0.03 ohm Drain-Source On Resistance, suitable for SWITCHING applications. This SINGLE transistor in PLASTIC/EPOXY package features an ENHANCEMENT MODE and built-in DIODE, making it ideal for high-current operations.
IRF630FP
The STMicroelectronics IRF630FP is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 25W, this transistor has a 0.4 ohm Drain-Source On Resistance and can handle up to 9A drain current.
160 mJ
9 A
.4 ohm
25 W
36 A
VNB20N07
VNB20N07 by STMicroelectronics is an N-channel Power FET with 83W power dissipation. It operates in enhancement mode with 0.07 ohm on-resistance, making it suitable for high-power applications. The transistor features a fast turn-on time of 580ns and turn-off time of 1100ns, ideal for efficient switching operations.
.07 ohm
83 W
1100 ns
580 ns
STP45NE06
STP45NE06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 180A IDM, 150mJ EAS, and 0.028 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with max temp of 175 °C, making it suitable for high-power circuits.
150 mJ
45 A
.028 ohm
180 A
STP4NB100
STP4NB100 by STMicroelectronics is a N-CHANNEL FET with 1000V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15.2A IDM, 360mJ EAS, and 125W Max Power Dissipation. Suitable for high-power ENHANCEMENT MODE operations in various electronic systems.
360 mJ
1000 V
4.4 ohm
STW8NB100
STW8NB100 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 1000V breakdown voltage, 29.2A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
8 A
7.3 A
1.45 ohm
29.2 A
STW11NB80
STW11NB80 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 11 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 190 W. Ideal for high-voltage circuits, it ensures reliable performance in demanding environments.
500 mJ
11 A
44 A
STW20NB50
STW20NB50 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 20A max drain current. It offers a low on-resistance of 0.25Ω and can handle up to 250W power dissipation. This versatile transistor operates efficiently in high-temperature environments up to 150 °C.
.25 ohm
75 pF
250 W
57 ns
STN2NE10L
STN2NE10L by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 7.2A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and 20mJ EAS rating. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount with DUAL terminal position.
20 mJ
2 A
1.8 A
.45 ohm
R-PDSO-G4
4
2.5 W
7.2 A
STP7NB60
STP7NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage and 28.8A pulsed drain current, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode at max 150 °C temperature. With 1.2 ohm RDS(on) and 125W power dissipation, it offers reliable performance in various power electronics designs.
1.2 ohm
21 pF
28.8 A
39 ns
STP80NE03L-06
STP80NE03L-06 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.009 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
600 mJ
.009 ohm
700 pF
405 ns
STP3NB100
STP3NB100 by STMicroelectronics is a N-CHANNEL FET with 1000V DS breakdown voltage, 12A IDM, and 244mJ EAS. Ideal for switching applications due to its single configuration with built-in diode and 6Ω RDS(on). Operating in enhancement mode, it can handle up to 100W power dissipation at a max temp of 150 °C.
244 mJ
3 A
6 ohm
12 A
STB50NE10T4
STB50NE10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 200A IDM, and 0.027 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
STB80NE03L-06T4
STB80NE03L-06T4 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 80A max drain current, and 0.008 ohm RDS(on). Ideal for switching applications, it features a built-in diode and operates in enhancement mode. Package: PLASTIC/EPOXY, GULL WING terminals, and small outline style.
.008 ohm
STE26NA90
STE26NA90 by STMicroelectronics is a N-CHANNEL Power FET with 900V DS Breakdown Voltage and 26A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 104A Pulsed Drain Current, and operates in ENHANCEMENT MODE.
3000 mJ
900 V
26 A
.3 ohm
R-XUFM-X4
UNSPECIFIED
104 A
UL RECOGNIZED
UPPER
STN1N20
STN1N20 by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 200V DS Breakdown Voltage, 4A IDM, and 10mJ EAS. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 2.9W in a SMALL OUTLINE package suitable for surface mount assembly.
10 mJ
1 A
1.5 ohm
2.9 W
STP12PF06
STP12PF06 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 48A IDM, 200mJ EAS, and 0.2 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W at 175°C.
.2 ohm
P-CHANNEL
60 W
48 A
Other Transistors
STN2NE10
STN2NE10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 8A IDM, 20mJ EAS, and 0.4 ohm RDS(on). With a max operating temperature of 150 °C, it's suitable for various power management tasks in electronic devices.
STS3DNE60L
STS3DNE60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 12A IDM and 0.1 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for high-power circuits.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.1 ohm
R-PDSO-G8
e4
8
2 W
NICKEL PALLADIUM GOLD
STS12NF30L
STS12NF30L by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, 48A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in diode and operates at up to 150 °C.
.011 ohm
260
Nickel/Palladium/Gold (Ni/Pd/Au)
STW15NB50
STW15NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for SWITCHING applications. It features 58.4A max pulsed drain current and 850mJ avalanche energy rating. Operating in enhancement mode, it has a max power dissipation of 190W and can handle up to 150 °C operating temperature.
850 mJ
14.6 A
.36 ohm
58.4 A
IRF640FP
STMicroelectronics' IRF640FP is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A Max Pulsed Drain Current, 280mJ Avalanche Energy Rating, and 0.18 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 40W at 150 °C.
280 mJ
18 A
72 A
STH15NB50FI
STH15NB50FI by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 58.4A IDM, 850mJ EAS, and 0.36 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 80W and can handle up to 150 °C.
10.5 A
STB10N60M2
STB10N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 30A IDM, 110mJ EAS, and 0.6 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 85W and operates b/w -55 to 150 °C.
110 mJ
7.5 A
.6 ohm
.84 pF
-55 Cel
85 W
STP6NC60
STP6NC60 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 6A max drain current, and 125W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
320 mJ
6 A
24 A
© 2023 All rights reserved
