Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
STB11NM60-1
STMicroelectronics
STB11NM60-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 44A IDM, and 0.45 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. The transistor has a max power dissipation of 110W and can withstand temperatures up to 150 °C.
350 mJ
SINGLE WITH BUILT-IN DIODE
600 V
11 A
.45 ohm
METAL-OXIDE SEMICONDUCTOR
TO-262AA
R-PSIP-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
N-CHANNEL
110 W
44 A
Not Qualified
FET General Purpose Power
NO
Matte Tin (Sn)
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STB20NM50-1
STB20NM50-1 by STMicroelectronics is a N-channel FET with 500V DS breakdown voltage, 80A IDM, and 0.25 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 110W power dissipation and 150 °C max temperature.
650 mJ
500 V
20 A
.25 ohm
80 A
TIN
STB45NF06
STB45NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 38A Drain Current, and 0.028 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, with 152A Pulsed Drain Current capability.
260 mJ
60 V
38 A
.028 ohm
TO-263AB
R-PSSO-G2
2
175 Cel
SMALL OUTLINE
80 W
152 A
YES
MATTE TIN
GULL WING
STB80NF55-08T4
STB80NF55-08T4 by STMicroelectronics is a N-channel FET with 55V DS breakdown voltage, 80A max drain current, and 0.008 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. Suitable for surface mount assembly, it has a max power dissipation of 300W and can withstand temperatures up to 175 °C.
1000 mJ
DRAIN
55 V
.008 ohm
245
300 W
320 A
Matte Tin (Sn) - annealed
30
STB80PF55T4
STB80PF55T4 by STMicroelectronics is a P-CHANNEL FET with 55V DS Breakdown Voltage, 80A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications due to its 320A Pulsed Drain Current and 1.4mJ Avalanche Energy Rating in a small outline package.
1.4 mJ
.018 ohm
P-CHANNEL
Other Transistors
STB85NF3LLT4
STB85NF3LLT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 85A Drain Current, and 0.0095 ohm On Resistance. Ideal for SWITCHING applications due to its 340A Pulsed Drain Current capability. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
30 V
85 A
.0095 ohm
340 A
STD4NS25T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR;
120 mJ
250 V
4 A
1.1 ohm
TO-252
50 W
16 A
STD60NF3LLT4
STD60NF3LLT4 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 60A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 240A Pulsed Drain Current, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 100W and can withstand temperatures up to 175 °C.
700 mJ
60 A
.0105 ohm
TO-252AA
260
100 W
240 A
STE110NS20FD
STE110NS20FD by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 200V DS Breakdown Voltage, 440A IDM, and 0.024 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 500W and can handle up to 150 °C temperature.
AVALANCHE RATED
750 mJ
ISOLATED
200 V
110 A
.024 ohm
R-XUFM-X4
4
UNSPECIFIED
FLANGE MOUNT
500 W
440 A
NICKEL
UPPER
STE48NM50
STE48NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 192A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications due to its 450W Pdiss, EAS of 810mJ, and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
810 mJ
48 A
.1 ohm
R-PUFM-X4
NOT SPECIFIED
450 W
192 A
STE70NM50
STE70NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 70A Drain Current. Ideal for SWITCHING applications, it features a max Pulsed Drain Current of 280A and an Avalanche Energy Rating of 1400mJ. Operating in ENHANCEMENT MODE, this transistor has a 0.05 ohm On Resistance and can handle up to 460W power dissipation.
1400 mJ
70 A
.05 ohm
460 W
280 A
STP16NS25
STP16NS25 by STMicroelectronics is a N-CHANNEL FET with 250V DS breakdown voltage, ideal for SWITCHING applications. It features 64A max pulsed drain current and 0.28 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 140W and can handle up to 150 °C temperature.
600 mJ
.28 ohm
TO-220AB
R-PSFM-T3
140 W
64 A
STP20NM50FP
STP20NM50FP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 650mJ EAS, and 0.25 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 35W at 150 °C.
35 W
STP8NM60
STP8NM60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 32A IDM, and 1 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 100W.
200 mJ
8 A
1 ohm
32 A
STP8NS25FP
STP8NS25FP by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 32A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with ISOLATED case connection.
30 W
STP8NS25
STP8NS25 by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 32A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 80W at max temp of 150 °C.
STP90NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
90 A
.0065 ohm
150 W
360 A
STSJ25NF3LL
STMicroelectronics' STSJ25NF3LL is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 100A IDM and 0.013 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
12 A
.013 ohm
R-PDSO-G8
e4
8
70 W
100 A
NICKEL PALLADIUM GOLD
DUAL
STW20NM50
STW20NM50 by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 650mJ EAS, and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 214W at 150 °C.
TO-247
214 W
STY100NS20FD
STY100NS20FD by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 400A IDM, and 0.024 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
400 A
STB70NF03L-1
STB70NF03L-1 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 280A IDM, and 0.0095 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175 °C.
500 mJ
STS5DNF20V
STS5DNF20V by STMicroelectronics is an N-CHANNEL FET with 20V DS Breakdown Voltage and 5A Drain Current. Ideal for SWITCHING applications, it features a dual-element configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
5 A
.045 ohm
2 W
Nickel/Palladium/Gold (Ni/Pd/Au)
STT3PF30L
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
LOW THRESHOLD
2.4 A
.2 ohm
R-PDSO-G6
6
1.6 W
10 A
STF150N10F7
STF150N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 260A IDM, and 0.0042 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175 °C.
495 mJ
100 V
65 A
.0042 ohm
67 pF
-55 Cel
260 A
STF80N10F7
STF80N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 40A Drain Current, and 0.01 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with 160A Pulsed Drain Current. Operating range from -55 to 175 °C.
ULTRA LOW-ON RESISTANCE
40 A
.01 ohm
160 A
STFW38N65M5
STFW38N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A IDM, 660mJ EAS, and 0.095 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with SILICON element material and METAL-OXIDE SEMICONDUCTOR technology.
ULTRA LOW RESISTANCE
660 mJ
650 V
30 A
.095 ohm
120 A
STH245N75F3-6
STH245N75F3-6 by STMicroelectronics is a N-channel Power FET with 75V DS breakdown voltage, 720A IDM, and 0.003 ohm RDS(on). It is used for switching applications in automotive industry due to AEC-Q101 standard compliance.
75 V
180 A
.003 ohm
R-PSSO-G6
720 A
AEC-Q101
STH80N10F7-2
STH80N10F7-2 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 320A IDM, and 0.0095 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE at -55 to 175 °C, with 110W Pdiss and GULL WING terminals.
STP80N10F7
STP80N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A ID, and 0.01 ohm RDS. It is used for SWITCHING applications in ENHANCEMENT MODE with 320A IDM. Operating temp range: -55 to 175 °C.
STB12NM50ND
STB12NM50ND by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. Features include 500V DS Breakdown Voltage, 44A Pulsed Drain Current, and 0.38 ohm On Resistance. Suitable for high-power switching circuits in various electronic devices.
.38 ohm
STD12NM50ND
STD12NM50ND by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features a 500V DS Breakdown Voltage, 44A Pulsed Drain Current, and 0.38 ohm On Resistance. With a max power dissipation of 100W and operating temperature of 150 °C, it is ideal for high-power switching circuits.
STD3NK60ZD
STD3NK60ZD by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 9.6A Pulsed Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE, operating in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
150 mJ
3.6 ohm
45 W
9.6 A
STD40N2LH5
STD40N2LH5 by STMicroelectronics is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0155 ohm RDS(on), and 35W Pdiss in a PLASTIC/EPOXY package.
110 mJ
25 V
.0155 ohm
STF6N52K3
STF6N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max Pulsed Drain Current, 110mJ Avalanche Energy Rating, and 1.2ohm Max Drain-Source On Resistance. This METAL-OXIDE SEMICONDUCTOR transistor operates at up to 150 °C and has a power dissipation of 25W in a FLANGE MOUNT package.
ULTRA-LOW RESISTANCE
525 V
1.2 ohm
25 W
STP180N10F3
STP180N10F3 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has 120A Drain Current, 0.0048 ohm On Resistance, and 315W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a SINGLE configuration with BUILT-IN DIODE and operates at up to 175 °C.
.0048 ohm
315 W
480 A
STP130NH02L
STP130NH02L by STMicroelectronics is a N-CHANNEL FET with 24V DS Breakdown Voltage, 360A IDM, and 0.0044 ohm RDS(on). Ideal for SWITCHING applications due to its 175°C Max Operating Temp and 150W Power Dissipation. It features SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package.
900 mJ
24 V
.0044 ohm
STW22NM60N
STW22NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 16A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
300 mJ
.22 ohm
125 W
STB36NM60N
STB36NM60N by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 25A max drain current, and 250W power dissipation. Ideal for high-performance power management in compact designs.
345 mJ
25 A
29 A
.105 ohm
250 W
116 A
STD75N3LLH6
STD75N3LLH6 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 75A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 60W. Ideal for high-power switching circuits requiring efficient performance.
75 A
60 W
300 A
STL9N3LLH5
STL9N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
9 A
.022 ohm
S-XDSO-N5
5
SQUARE
36 A
NO LEAD
STU75N3LLH6
STU75N3LLH6 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
.0084 ohm
TO-251
STL80N4LLF3
STL80N4LLF3 by STMicroelectronics is an N-channel FET designed for high-efficiency applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
40 V
.007 ohm
R-PDSO-N8
STS15N4LLF3
STS15N4LLF3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE up to 150°C.
2000 mJ
15 A
2.7 W
STB20NM60D
STB20NM60D by STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 20A max drain current, and 192W power dissipation. Ideal for power management in various electronic devices.
.29 ohm
192 W
STD50N03L-1
STD50N03L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 40 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
230 mJ
.019 ohm
TO-251AB
STD50N03L
STD50N03L by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 40 A and a breakdown voltage of 30 V. It offers low on-resistance at 0.019 Ω and operates up to 175 °C. This compact FET is suitable for high-efficiency power management.
STW30NF20
STW30NF20 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
140 mJ
.075 ohm
STW40NF20
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; No. of Elements: 1; Maximum Drain-Source On Resistance: .045 ohm;
160 W
© 2023 All rights reserved
