Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
STF31N65M5
STMicroelectronics
STF31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A ID and 30W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.
SINGLE
22 A
METAL-OXIDE SEMICONDUCTOR
1
150 Cel
NOT SPECIFIED
N-CHANNEL
30 W
FET General Purpose Powers
NO
STF34N65M5
STF34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 112A IDM, and 0.11 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE at up to 150 °C.
510 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
650 V
28 A
.11 ohm
6.3 pF
TO-220AB
R-PSFM-T3
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
35 W
112 A
THROUGH-HOLE
SWITCHING
SILICON
STFI260N6F6
STFI260N6F6 by STMicroelectronics is a N-CHANNEL FET with 80A ID and 41.7W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors.
80 A
175 Cel
41.7 W
STI18N65M5
STI18N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 210mJ EAS, and 0.22 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W at 150 °C.
210 mJ
DRAIN
15 A
.22 ohm
TO-262AA
R-PSIP-T3
IN-LINE
110 W
60 A
STI57N65M5
STI57N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 168A IDM, and 0.063 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 960mJ EAS rating.
960 mJ
42 A
.063 ohm
168 A
STP10P6F6
STP10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 40A IDM, 80mJ EAS, and 0.116 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and can handle up to 30W power dissipation.
80 mJ
60 V
10 A
.116 ohm
P-CHANNEL
40 A
STP11N65M5
STP11N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 36A IDM, and 0.48 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 85W. The transistor has a temp range of -55 to 150 °C and comes in a rectangular package with through-hole terminals.
130 mJ
9 A
.48 ohm
-55 Cel
85 W
36 A
STP36N55M5
STP36N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, ideal for SWITCHING applications. It features 33A Drain Current, 0.08 ohm On Resistance, and 190W Power Dissipation in a RECTANGULAR package. Operating at up to 150°C, it offers reliable performance in various industrial settings.
550 V
33 A
.08 ohm
190 W
132 A
FET General Purpose Power
STP38N65M5
STP38N65M5 by STMicroelectronics is a Power FET with 650V DS Breakdown Voltage, 120A IDM, and 0.095 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
660 mJ
30 A
.095 ohm
120 A
STW20N65M5
STW20N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 72A IDM, and 0.19 ohm RDS. It's used for SWITCHING applications due to its 130W power dissipation, 150°C max temp, and METAL-OXIDE SEMICONDUCTOR technology.
270 mJ
18 A
.19 ohm
TO-247
130 W
72 A
STW31N65M5
STW31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A max drain current and 150W power dissipation. Ideal for high-power applications, it operates at up to 150°C, utilizing metal-oxide semiconductor technology for efficient performance.
150 W
STW34N65M5
STW34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 112A IDM and 0.11 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in various power electronics designs.
STW36N55M5
STW36N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, 33A Drain Current, and 0.08 ohm On Resistance. Ideal for SWITCHING applications due to its 132A Pulsed Drain Current capability. Operating in ENHANCEMENT MODE, it has a max power dissipation of 190W at 150 °C.
STF12NK80Z
STF12NK80Z by STMicroelectronics is a N-CHANNEL FET with 10.5A max drain current and 40W power dissipation. Ideal for high-power applications, it operates at up to 150 °C, featuring METAL-OXIDE SEMICONDUCTOR tech and matte tin finish for robust performance.
10.5 A
e3
40 W
MATTE TIN
STY139N65M5
STY139N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 130A max drain current and 0.017 ohm on-resistance. Operating in enhancement mode, this MOSFET has a max pulsed drain current of 520A and an avalanche energy rating of 2400mJ.
2400 mJ
130 A
.017 ohm
520 A
STB32NM50N
STB32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 190W max power dissipation. The transistor features a built-in diode, GULL WING terminals, and can withstand up to 150 °C operating temperature.
340 mJ
500 V
.13 ohm
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
245
88 A
YES
Matte Tin (Sn) - annealed
GULL WING
30
STF25N80K5
STF25N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, 78A IDM, and 0.26 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 40W Pd max. Suitable for high-power systems requiring efficient power management.
200 mJ
800 V
19.5 A
.26 ohm
78 A
STF32NM50N
STF32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. The transistor has a single configuration with built-in diode and comes in a PLASTIC/EPOXY package.
STH260N6F6-6
STH260N6F6-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
180 A
300 W
STH400N4F6-2
STH400N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring robust performance.
STH400N4F6-6
STH400N4F6-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors. This single configuration transistor is surface mountable, utilizing metal-oxide semiconductor technology.
STI360N4F6
STI360N4F6 by STMicroelectronics is a N-CHANNEL FET with 120A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors.
STP32NM50N
STP32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 88A IDM, 340mJ EAS, and 0.13 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 190W at 150 °C.
Matte Tin (Sn)
STP360N4F6
STP360N4F6 by STMicroelectronics is a N-CHANNEL FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates at up to 175°C temperature, featuring metal-oxide semiconductor technology.
STP7N80K5
STP7N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM, 88mJ EAS, and 110W Max Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150 °C, making it suitable for high-power electronic systems.
88 mJ
6 A
1.2 ohm
24 A
STW25N80K5
STW25N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 78A Max Pulsed Drain Current, 200mJ Avalanche Energy Rating, and 0.26 ohm Max Drain-Source On Resistance. Suitable for high-power circuits requiring efficient switching capabilities.
250 W
STW32NM50N
STW32NM50N by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150°C temperature.
STW60NM50N
STW60NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 272A IDM, 551mJ EAS, and 0.043 ohm RDS(on). Operating in ENHANCEMENT MODE at up to 150 °C, it has a SILICON element and FLANGE MOUNT package style.
551 mJ
68 A
.043 ohm
272 A
STW78N65M5
STW78N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 276A pulsed drain current, 2000mJ avalanche energy rating, and 0.032ohm max on resistance. The transistor operates in enhancement mode with a max power dissipation of 450W at 150°C, making it suitable for high-power applications.
2000 mJ
69 A
.032 ohm
450 W
276 A
AEC-Q101
STD30NF04LT
STD30NF04LT by STMicroelectronics is a N-CHANNEL FET with 30A max drain current and 50W max power dissipation. Ideal for power applications, it operates at up to 175 °C and features surface mount configuration for easy installation.
260
50 W
STH110N10F7-2
STH110N10F7-2 by STMicroelectronics is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring efficient power management in surface-mount configurations.
110 A
STH110N10F7-6
STH110N10F7-6 by STMicroelectronics is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount designs, this MOSFET offers efficient power management in various electronic systems.
STH270N8F7-2
STH270N8F7-2 by STMicroelectronics is a N-channel Power FET with 80V DS breakdown voltage, 180A max drain current, and 0.0021 ohm RDS(on). It is used for switching applications in enhancement mode with 720A pulsed drain current.
ULTRA LOW RESISTANCE
1160 mJ
80 V
.0021 ohm
315 W
720 A
STL20DN10F7
STL20DN10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for SWITCHING applications. It features 20A max drain current, 0.067 ohm RDS(on), and operates in the -55 to 150 °C temperature range. Suitable for high-power switching circuits requiring efficient performance.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
100 V
20 A
12.3 A
.067 ohm
R-PDSO-F6
6
62.5 W
FLAT
DUAL
STL51N3LLH5
STL51N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 51A max drain current and 62.5W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
51 A
STP110N55F6
STMicroelectronics' STP110N55F6 is a single N-channel Power FET with 110A max drain current and 150W power dissipation. Utilizes metal-oxide semiconductor tech, operates up to 175 °C. Ideal for high-power applications requiring efficient switching capabilities.
STD80N6F6
STD80N6F6 by STMicroelectronics is a N-CHANNEL FET with 80A max drain current and 120W max power dissipation. Utilizes metal-oxide semiconductor technology, suitable for high-power applications in surface mount configurations. Operating temperature up to 175°C makes it ideal for industrial use.
120 W
STL40N75LF3
STL40N75LF3 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 160A IDM, and 0.022 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with DUAL terminals.
75 V
.022 ohm
R-PDSO-F5
5
62 W
160 A
STP9NM40N
STP9NM40N by STMicroelectronics is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22.4A IDM, 140mJ EAS, and 0.79 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W and can handle up to 150 °C temperature.
BULK: 2500
140 mJ
400 V
5.6 A
.79 ohm
2.3 pF
60 W
22.4 A
STW36NM60ND
STW36NM60ND by STMicroelectronics is a N-CHANNEL FET with 29A max drain current and 190W power dissipation. Ideal for high-power applications, it operates at up to 150 °C with METAL-OXIDE SEMICONDUCTOR technology.
29 A
STY145N65M5
STY145N65M5 by STMicroelectronics is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 552A Max Pulsed Drain Current, 2420mJ Avalanche Energy Rating, and 0.015 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 625W at 150°C.
2420 mJ
138 A
.015 ohm
625 W
552 A
STDLED656
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
1.3 ohm
TO-252
STFW1N105K3
STFW1N105K3 by STMicroelectronics is a N-CHANNEL FET with 1.4A max drain current and 20W max power dissipation. Ideal for applications requiring high power efficiency in a single configuration, such as power management systems or motor control circuits.
1.4 A
20 W
STH270N4F3-2
STH270N4F3-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID, 300W power dissipation, and operates up to 175°C. Ideal for high-power applications requiring efficient switching capabilities in surface-mount configurations.
STP1N105K3
STP1N105K3 by STMicroelectronics is a N-CHANNEL FET with 1.4A max drain current and 60W max power dissipation. Ideal for applications requiring high efficiency power management in temperatures up to 150 °C.
STP28NM60ND
STP28NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 92A IDM, and 0.15 ohm RDS(on). Ideal for SWITCHING applications due to its 190W power dissipation and ENHANCEMENT MODE operation.
50 mJ
600 V
23 A
.15 ohm
92 A
STULED656
STULED656 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. It features 24A max pulsed drain current and 1.3ohm max drain-source resistance, operating in ENHANCEMENT MODE up to 150 °C. The PLASTIC/EPOXY package with IN-LINE style and DRAIN connection offers reliable performance in various power applications.
TO-251
STW28NM60ND
STW28NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 92A IDM, 50mJ EAS, and 0.15ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a RECTANGULAR package style with FLANGE MOUNT and DRAIN case connection.
© 2023 All rights reserved
