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STV160NF02LAT4

STMicroelectronics

STV160NF02LAT4 by STMicroelectronics

STV160NF02LAT4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 160 A, low on-resistance of 0.0037 Ω, and operates at a breakdown voltage of 20 V. Ideal for high-performance power management in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,895 parts In-Stock

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Digiode

USA . 3,929 parts In-Stock

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Anansix

USA . 1,205 parts In-Stock

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IDEA Electronic Components Group

UK . 494 parts In-Stock

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$0.522

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$0.469

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494

$0.522

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$0.469

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MKK Technologies

India . 832 parts In-Stock

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$0.981

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832

$0.981

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DigiPath Technology Company

USA . 832 parts In-Stock

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$0.981

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832

$0.981

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AZTECH Wire

Italy . 283 parts In-Stock

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$18.560

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Component Stockers USA

USA . 464 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 4,734 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,708 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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Parana Technologies

USA . 2,373 parts In-Stock

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$0.624

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$0.624

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Perfect Parts

USA . 1,344 parts In-Stock

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Corphita

USA . 833 parts In-Stock

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Overview

Elevate your projects with the STV160NF02LAT4 from STMicroelectronics, a leader in power management innovation. This N-channel FET delivers unparalleled efficiency and performance for your switching applications, making it ideal for automotive, industrial, and consumer electronics. With its robust design and built-in diode, you'll enjoy enhanced reliability and reduced energy loss, empowering you to build smarter, more efficient systems while benefiting from ST's commitment to quality and cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers excellent durability and resistance to environmental factors, making it reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically provide better performance than P-channel transistors, allowing for higher efficiency in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode enhances protection against voltage spikes, making this FET ideal for applications where back EMF can occur.

Transistor Application: SWITCHING

Designed for efficient switching applications, this FET can quickly turn on and off, contributing to overall circuit performance.

Surface Mount: YES

The surface mount design enables compact placement on circuit boards, saving space and enhancing overall design flexibility.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V provides reliability in high-voltage applications, ensuring safe operation within specified limits.

Package Shape: RECTANGULAR

The rectangular package shape aids in effective thermal management and optimized layout for circuit integration.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering in surface mount applications, providing reliable connections and improving manufacturability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation leads to higher performance by reducing off-state leakage current and improving overall efficiency.

Maximum Pulsed Drain Current (IDM): 640 A

With a pulsed drain current rating of 640 A, this FET can handle large power surges, making it suitable for demanding applications.

Avalanche Energy Rating (EAS): 330 mJ

A high avalanche energy rating confirms its robustness against transient conditions, thus enhancing circuit protection.

No. of Terminals: 10

Having 10 terminals allows for versatile connections, enabling complex circuit designs and multiple configurations.

Package Style (Meter): SMALL OUTLINE

A small outline package style reduces footprint on PCB, allowing for higher component density and more compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides higher transconductance and efficiency, making this FET suitable for high-speed applications.

Transistor Element Material: SILICON

Silicon material ensures good thermal performance and is widely used due to its reliability and availability.

Maximum Drain Current (ID): 160 A

The high maximum drain current rating of 160 A allows this FET to handle substantial loads, ideal for motor controls and power management systems.

Maximum Drain-Source On Resistance: 0.0037 ohm

Low on-resistance minimizes power loss during operation, ensuring better efficiency and thermal performance during switching.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design, allowing for easier routing and layout on PCB.

Case Connection: DRAIN

Connecting the case to the drain helps in managing heat dissipation effectively, contributing to reliable operation under high current conditions.

Technical Specifications

Power Field Effect Transistors (FET) STV160NF02LAT4 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

330 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

160 A

Maximum Drain-Source On Resistance:

.0037 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G10

No. of Elements:

1

No. of Terminals:

10

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

640 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STV160NF02LAT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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