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STV160NF02LT4

STMicroelectronics

STV160NF02LT4 by STMicroelectronics

STV160NF02LT4 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 160 A, low on-resistance of 0.0035 Ω, and built-in diode for enhanced performance. Ideal for high-efficiency power management in compact designs.

Median Price

$7.000

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 70 parts In-Stock

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$7.000

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70

$7.000

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DF Sales Co.

USA . 70 parts In-Stock

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$7.000

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70

$7.000

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Vyrian

USA . 6,108 parts In-Stock

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6,108

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Chip Stock

USA . 3,240 parts In-Stock

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3,240

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Digiode

USA . 962 parts In-Stock

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962

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Anansix

USA . 94 parts In-Stock

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Bristol Electronics

USA . 47 parts In-Stock

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47

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Resion

USA . 7 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,660 parts In-Stock

1+ parts

$1.817

100+ parts

-

1k+ parts

$1.635

10k+ parts

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1,660

$1.817

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$1.635

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MKK Technologies

India . 936 parts In-Stock

1+ parts

$3.417

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936

$3.417

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DigiPath Technology Company

USA . 936 parts In-Stock

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$3.417

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936

$3.417

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AZTECH Wire

Italy . 479 parts In-Stock

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$13.670

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479

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Alle Elektronik GmbH

Germany . 3,323 parts In-Stock

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Corphita

USA . 1,950 parts In-Stock

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Assy Fe

Spain . 1,800 parts In-Stock

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Parana Technologies

USA . 1,757 parts In-Stock

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$2.172

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1,757

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$2.172

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Overview

Elevate your power management solutions with the STV160NF02LT4 from STMicroelectronics, a leader in semiconductor innovation. This high-performance N-channel FET delivers exceptional efficiency and reliability for demanding applications like automotive and industrial systems. Its compact package and built-in diode simplify design while maximizing space. Trust in ST's proven quality to drive your projects forward with enhanced power control and outstanding thermal performance—empowering you to achieve excellence effortlessly!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body ensures durability and resistance to environmental conditions, making the product reliable in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility, allowing for better performance and efficiency in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides additional protection and functionality, streamlining design and enhancing reliability in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can efficiently handle rapid on/off processes, making it ideal for power management.

Surface Mount: YES

Surface mount capability allows for compact designs and automated assembly, which can reduce manufacturing costs and improve efficiency.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V provides adequate protection in high-voltage applications, ensuring safe operation and longevity.

Package Shape: RECTANGULAR

The rectangular package shape enhances space-efficiency on PCBs, allowing for more compact circuit designs.

Terminal Form: GULL WING

Gull wing terminals facilitate easier soldering and provide strong mechanical connections, improving reliability in assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation optimizes the switching performance, enabling lower power consumption and improved efficiency.

Maximum Pulsed Drain Current (IDM): 640 A

With a high maximum pulsed drain current capacity, this FET can handle substantial loads, making it suitable for demanding applications.

Avalanche Energy Rating (EAS): 1500 mJ

The high avalanche energy rating indicates resilience against voltage spikes, ensuring reliable operation in fluctuating conditions.

No. of Terminals: 10

Having 10 terminals improves connectivity options, supporting more complex circuit designs and functionalities.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances space-saving applications, ideal for modern, compact electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides low power consumption, fast switching speeds, and high input impedance, ideal for efficient circuit performance.

Transistor Element Material: SILICON

Silicon is a widely used and reliable semiconductor material, offering good thermal stability and performance across different applications.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and corrosion resistance, ensuring longevity and reliability in connections.

Maximum Drain Current (ID): 160 A

A maximum drain current of 160 A ensures that this FET can efficiently handle high loads, beneficial for power switching applications.

Maximum Drain-Source On Resistance: 0.0035 ohm

Low on-resistance minimizes power dissipation during operation, increasing overall efficiency and performance in high-frequency circuits.

Terminal Position: DUAL

Dual terminal positioning allows for flexible configurations in circuit designs, enhancing design flexibility and improving layout options.

Moisture Sensitivity Level (MSL): 3

An MSL of 3 indicates a moderate sensitivity to moisture, guiding appropriate handling and storage procedures during manufacturing.

Maximum Time At Peak Reflow Temperature (s): 30

This specification ensures that the component can withstand surface mounting processes without degradation, critical for quality and performance.

Peak Reflow Temperature °C: 250

A peak reflow temperature of 250 °C indicates compatibility with modern soldering processes, ensuring robust assembly without compromising reliability.

Technical Specifications

Power Field Effect Transistors (FET) STV160NF02LT4 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

1500 mJ

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

160 A

Maximum Drain-Source On Resistance:

.0035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G10

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

10

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

250

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

640 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STV160NF02LT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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