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PD85035TR-E

STMicroelectronics

PD85035TR-E by STMicroelectronics

PD85035TR-E by STMicroelectronics is an N-channel FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates at up to 165 °C. This surface-mount transistor ensures efficient power management in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,314 parts In-Stock

1+ parts

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4,314

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Vyrian

USA . 3,831 parts In-Stock

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3,831

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Anansix

USA . 2,368 parts In-Stock

1+ parts

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2,368

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 333 parts In-Stock

1+ parts

$0.450

100+ parts

-

1k+ parts

$0.405

10k+ parts

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333

$0.450

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$0.405

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MKK Technologies

India . 1,419 parts In-Stock

1+ parts

$0.846

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1,419

$0.846

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DigiPath Technology Company

USA . 1,419 parts In-Stock

1+ parts

$0.846

100+ parts

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1,419

$0.846

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AZTECH Wire

Italy . 682 parts In-Stock

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$8.820

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682

$8.820

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Parana Technologies

USA . 1,589 parts In-Stock

1+ parts

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100+ parts

$0.538

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1,589

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$0.538

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Corphita

USA . 1,340 parts In-Stock

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1,340

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Overview

Elevate your designs with the PD85035TR-E from STMicroelectronics, a leader in innovative semiconductor solutions. This N-Channel Power FET balances exceptional performance and reliability, making it ideal for amplifiers in various applications—from consumer electronics to industrial automation. Experience seamless integration, superior power efficiency, and robust thermal management, ensuring your projects thrive in even the most demanding environments. Trust STMicroelectronics for quality that empowers your innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are typically more efficient and offer better performance in switching and amplification tasks compared to their P-channel counterparts.

Configuration: SINGLE

A single configuration simplifies the design and integration process in circuits, saving space and reducing complexity.

Transistor Application: AMPLIFIER

Designed for amplification, this FET excels in high-fidelity audio and RF signal applications, ensuring better output quality.

Surface Mount: YES

The surface mount capability allows for compact designs, enhancing the product's suitability for modern electronic devices.

Minimum DS Breakdown Voltage: 40 V

A minimum breakdown voltage of 40V makes this FET capable of handling more demanding applications without risk of damage.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient layout and integration on PCBs, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering surface and reliability, ensuring stable connections in high-performance applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode allows for lower on-state resistance and increased efficiency, making it ideal for power applications.

Maximum Drain Current (Abs) (ID): 8 A

With a maximum drain current of 8A, this FET can support high-power applications while maintaining performance.

No. of Terminals: 2

Having only two terminals simplifies circuit design and reduces potential points of failure.

Maximum Power Dissipation (Abs): 95 W

A high power dissipation capability of 95W allows the FET to operate efficiently in power-intensive applications.

Package Style (Meter): SMALL OUTLINE

The small outline design is ideal for space-constrained applications, ensuring flexibility in device design.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high input impedance and low power consumption, which are critical for modern electronic applications.

Maximum Operating Temperature: 165 °C

With a high maximum operating temperature of 165 °C, this FET is suitable for use in harsh environments without compromising performance.

Transistor Element Material: SILICON

Silicon is a widely used material in electronics, known for its reliability and good thermal stability.

Maximum Drain Current (ID): 8 A

Reiterating its capability, the 8A maximum drain current ensures robust performance across a range of applications.

Terminal Position: DUAL

Dual terminal positioning aids in versatile circuit designs, making it adaptable for various configurations.

Case Connection: SOURCE

The source case connection enhances thermal management and performance, contributing to overall circuit efficiency.

Technical Specifications

Power Field Effect Transistors (FET) PD85035TR-E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD85035TR-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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