Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMTH3004LFGQ-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Peak Reflow Temperature (C): 260; Maximum Pulsed Drain Current (IDM): 250 A;
HIGH RELIABILITY
110 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
75 A
.0055 ohm
METAL-OXIDE SEMICONDUCTOR
240 pF
S-PDSO-N8
e3
3
1
8
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
260
N-CHANNEL
50 W
250 A
AEC-Q101; MIL-STD-202
YES
MATTE TIN
NO LEAD
DUAL
SWITCHING
SILICON
DMTH6016LFDFWQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
11.7 mJ
60 V
9.4 A
.018 ohm
25.4 pF
S-PDSO-N6
6
2.3 W
70 A
AEC-Q101; IATF 16949; MIL-STD-202
DMTH6016LFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.38 W; Package Shape: SQUARE; Maximum Drain Current (ID): 41 A;
12.8 mJ
41 A
.016 ohm
23.4 pF
S-PDSO-F8
2.38 W
160 A
MIL-STD-202
FLAT
NVMFS5C670NLWFAFT3G
Onsemi
NVMFS5C670NLWFAFT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 440A IDM, and 0.0088 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
166 mJ
71 A
.0088 ohm
15 pF
R-PDSO-F5
5
RECTANGULAR
61 W
440 A
AEC-Q101
30
DMT68M8LFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41.7 W; Terminal Form: FLAT; Terminal Position: DUAL;
39 mJ
54.1 A
.0095 ohm
44 pF
150 Cel
41.7 W
210 A
JANSR2N7585U2
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Avalanche Energy Rating (EAS): 240 mJ; Maximum Pulsed Drain Current (IDM): 200 A;
240 mJ
250 V
50 A
.04 ohm
R-CDSO-N3
CERAMIC, METAL-SEALED COFIRED
250 W
200 A
MIL-19500; RH - 100K Rad(Si)
150 ns
200 ns
DMT6017LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.76 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 50 A;
18 mJ
65 V
8.1 A
29 pF
e4
1.76 W
NICKEL PALLADIUM GOLD
DMTH6005LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Minimum Operating Temperature: -55 Cel; Transistor Application: SWITCHING;
171 mJ
100 A
.0041 ohm
69 pF
75 W
400 A
DMTH69M8LFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29.4 W; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 180 A;
45 mJ
45.4 A
15.9 A
41 pF
S-PDSO-F5
29.4 W
180 A
DMN2041UVT-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.44 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
5.8 A
.028 ohm
79 pF
R-PDSO-G6
2
1.44 W
36 A
GULL WING
DMN22M5UFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-30 Code: S-PDSO-N5; Package Body Material: PLASTIC/EPOXY;
175 mJ
27 A
.0025 ohm
538 pF
S-PDSO-N5
2.2 W
500 A
DMP2110UVTQ-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.01 W; Maximum Feedback Capacitance (Crss): 47 pF; Transistor Application: SWITCHING;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
1.8 A
.15 ohm
47 pF
P-CHANNEL
1.01 W
15 A
DMT10H072LFDFQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; JESD-30 Code: S-PDSO-N6; Terminal Finish: NICKEL PALLADIUM GOLD;
1.8 mJ
100 V
4 A
.062 ohm
2.5 pF
1.8 W
22 A
IPB65R190CFDATMA2
IPB65R190CFDATMA2 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 57.2A and EAS of 484mJ, operating in ENHANCEMENT MODE. With a 0.19 ohm RDS(on), it can handle up to 17.5A drain current efficiently at temperatures ranging from -55 to 150°C.
484 mJ
650 V
17.5 A
.19 ohm
TO-263AB
R-PSSO-G2
57.2 A
TIN
SINGLE
NVD6828NLT4G-VF01
NVD6828NLT4G-VF01 by Onsemi is a Power FET with 90V DS Breakdown Voltage, 206A IDM, and 0.025 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
90 mJ
90 V
.025 ohm
83 W
206 A
APT1003RSFLLG/TR
Microchip Technology
Microchip Technology's APT1003RSFLLG/TR is an N-CHANNEL Power FET with 1000V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a 16A IDM and 425mJ EAS. Operating in ENHANCEMENT MODE, this FET has a max temperature of 150°C and -55°C min, making it suitable for various industrial uses.
425 mJ
1000 V
3 ohm
16 A
MKE38P600LB-TUB
IXYS Corporation
IXYS Corporation's MKE38P600LB-TUB is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring series connected elements with built-in diode, it has a max ID of 50A and 0.045 ohm RDS(on). Operating in enhancement mode, this MOSFET has an EAS of 1950mJ and can withstand temperatures from -55 to 150°C.
1950 mJ
ISOLATED
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
600 V
.045 ohm
R-PDSO-G9
9
UL RECOGNIZED
NVMFS6H801NWFT3G
NVMFS6H801NWFT3G by Onsemi is a Power FET with 80V DS Breakdown Voltage, 900A IDM, and 960mJ EAS. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics. Operating from -55 to 175 °C, it features an N-CHANNEL configuration with built-in diode and metal-oxide semiconductor technology.
960 mJ
80 V
157 A
.0028 ohm
22 pF
R-PDSO-F6
166 W
900 A
Matte Tin (Sn) - annealed
IXTA02N250HVTRL
Littelfuse
The Littelfuse IXTA02N250HVTRL is a N-CHANNEL FET with 2500V DS Breakdown Voltage. It operates in Enhancement Mode, with 0.2A Drain Current and 450 ohm On Resistance. Ideal for high-voltage applications requiring low power dissipation and small outline package style.
2500 V
.2 A
450 ohm
3 pF
.6 A
10
NTBGS3D5N06C
NTBGS3D5N06C by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 491A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0037 ohm RDS(on), and 176mJ EAS rating. Operating in ENHANCEMENT MODE, this transistor has a max temp of 175°C and DRAIN connection.
176 mJ
127 A
.0037 ohm
21 pF
TO-263CB
R-PSSO-G6
115 W
491 A
NVMFS4C308NWFT1G
NVMFS4C308NWFT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 144A IDM, and 0.007 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE. This SMALL OUTLINE transistor operates b/w -55 to 175 °C with 39pF Crss.
42 mJ
17.2 A
.007 ohm
39 pF
30.6 W
144 A
MCAC60N15YA-TP
Micro Commercial Components
MCAC60N15YA-TP by Micro Commercial Components is a N-CHANNEL FET with 150V DS Breakdown Voltage, 120A IDM, and 0.019 ohm RDS. It operates in Enhancement Mode with 125W power dissipation. Ideal for high-power applications requiring efficient switching and control.
150 V
60 A
.019 ohm
5 pF
R-PDSO-F8
125 W
120 A
NVTYS005N06CLTWG
NVTYS005N06CLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 430A IDM, and 155mJ EAS. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
155 mJ
18 A
.0073 ohm
11 pF
R-PDSO-X8
76 W
430 A
UNSPECIFIED
NVMFWS003P03P8ZT1G
NVMFWS003P03P8ZT1G by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 900A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0018 ohm RDS(on), and operates in ENHANCEMENT MODE. AEC-Q101 compliant, it has a max power dissipation of 168.7W and can withstand up to 175 °C operating temperature.
186 mJ
234 A
.0018 ohm
4100 pF
168.7 W
NVTFS015P03P8ZTAG
NVTFS015P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 353A IDM and 88mJ EAS, suitable for high-power operations. With -55 to 175 °C operating range and AEC-Q101 standard, it ensures reliable performance in automotive environments.
88 mJ
17 A
.0075 ohm
875 pF
88.2 W
353 A
NTBL070N65S3
NTBL070N65S3 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 110A and EAS of 214mJ, suitable for high-power operations. With a Drain Current of 44A and 0.07 ohm RDS(on), it offers efficient performance in ENHANCEMENT MODE operation.
214 mJ
44 A
.07 ohm
14.6 pF
R-PSSO-F8
312 W
110 A
NTMT185N60S5H
NTMT185N60S5H by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 53A IDM and 124mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 116W and -55 to 150 °C operating temperature range, it offers reliable performance in various electronic systems.
124 mJ
.185 ohm
116 W
53 A
NTTFS012N10MD
NTTFS012N10MD by Onsemi is a Power FET with 100V DS Breakdown Voltage, 217A IDM, and 0.0144 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C. This N-CHANNEL transistor has a built-in diode and comes in an 8-terminal package.
121 mJ
45 A
.0144 ohm
8.4 pF
NOT SPECIFIED
62 W
217 A
NVTYS002N03CLTWG
NVTYS002N03CLTWG by Onsemi is a Power FET with N-CHANNEL polarity, 30V DS Breakdown Voltage, and 675A IDM. Ideal for applications requiring high power dissipation up to 75W in enhancement mode operation. Features include a built-in diode, avalanche energy rating of 320mJ, and AEC-Q101 compliance for automotive use.
320 mJ
29 A
.0031 ohm
43 pF
3.2 W
675 A
PCFA86210F
PCFA86210F by Onsemi is an N-CHANNEL FET with a 150V DS Breakdown Voltage and 0.0063 ohm Drain-Source On Resistance. Ideal for high-power applications, it operates in Enhancement Mode with a max power dissipation of 500W. AEC-Q101 certified, suitable for automotive and industrial sectors.
502 mJ
169 A
.0063 ohm
16 pF
R-XUUC-N2
UNCASED CHIP
500 W
UPPER
PCFA86361F
PCFA86361F by Onsemi is a N-CHANNEL FET with 80V DS Breakdown Voltage, 429W Power Dissipation, and 371A Drain Current. Ideal for high-power applications in automotive electronics due to its AEC-Q101 standard compliance and robust design.
819 mJ
371 A
.0014 ohm
139 pF
429 W
PCFA86561F
PCFA86561F by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 429W Power Dissipation, and 441A Drain Current. Ideal for high-power applications in automotive systems due to its AEC-Q101 standard compliance and robust design.
1167 mJ
441 A
.0011 ohm
255 pF
NTC020N120SC1
NTC020N120SC1 by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a 1200V DS breakdown voltage, 412A max pulsed drain current, and 264mJ avalanche energy rating. Operating in enhancement mode, it has a max power dissipation of 535W and can withstand temperatures from -55 to 175 °C.
264 mJ
1200 V
103 A
R-XUUC-N4
4
535 W
412 A
SILICON CARBIDE
NTC040N120SC1
NTC040N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, 240A IDM, and 0.056 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with SILICON CARBIDE material. With a max power dissipation of 348W and operating temperature range from -55 to 175 °C, it offers reliable performance.
613 mJ
.056 ohm
12 pF
348 W
240 A
NTC080N120SC1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 178 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
31 A
.11 ohm
6.5 pF
R-XUUC-N3
178 W
132 A
NTLJS14D0P03P8ZTAG
NTLJS14D0P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 165A IDM, 0.0135 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.4W and peak reflow temperature of 260C, it offers reliable performance in various electronic devices.
11 A
.0135 ohm
690 pF
2.4 W
165 A
254 ns
52 ns
NVMFS5831NLWFT1G
NVMFS5831NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0048 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Operating in enhancement mode with a max power dissipation of 143W at temperatures ranging from -55 to 175 °C.
683 mJ
40 V
26 A
.0048 ohm
389 pF
143 W
NVMFWS0D7N04XMT1G
NVMFWS0D7N04XMT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 987mJ EAS. Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance and high drain current capacity.
987 mJ
331 A
.0007 ohm
112 pF
134 W
NVMYS2D3N06CTWG
NVMYS2D3N06CTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Features include SINGLE configuration, GULL WING terminals, and ENHANCEMENT MODE operation.
622 mJ
171 A
.0023 ohm
24 pF
R-PSSO-G4
134.4 W
NVTFS012P03P8ZTAG
NVTFS012P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 47A IDM, and 0.02 ohm RDS(ON). Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors. Operating range from -55 to 175 °C with METAL-OXIDE SEMICONDUCTOR technology.
7 A
.02 ohm
506 pF
47 A
NVTFWS012P03P8ZTAG
NVTFWS012P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 47A IDM, 0.02 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SQUARE package and -55 to 175 °C temperature range, it's suitable for various power management needs.
SH32N65DM6AG
STMicroelectronics
SH32N65DM6AG by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 120A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for power management in automotive and industrial systems.
778 mJ
32 A
.097 ohm
.3 pF
245
208 W
NVMFS4C05NT3G
NVMFS4C05NT3G by Onsemi is a N-CHANNEL FET with 116A ID and 79W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for industrial use in demanding environments. With surface mount configuration and matte tin finish, it offers reliable performance in various power systems.
116 A
79 W
FET General Purpose Power
NVMFS4C05NWFT3G
NVMFS4C05NWFT3G by Onsemi is a single N-channel Power FET with 116A max drain current and 79W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
IPD65R1K4CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28.4 W; Maximum Drain Current (ID): 2.8 A; Maximum Drain-Source On Resistance: 1.4 ohm;
26 mJ
2.8 A
1.4 ohm
TO-252
28.4 W
8.2 A
BSP129H6906XTSA1
Infineon's BSP129H6906XTSA1 is a N-CHANNEL Power FET with 240V DS Breakdown Voltage. Ideal for DEPLETION MODE operation, it has a max IDM of 1.4A and RDS(ON) of 6 ohm. Widely used in automotive applications due to AEC-Q101 compliance and operating temperature range from -55°C to 150°C.
240 V
.35 A
6 ohm
R-PDSO-G4
DEPLETION MODE
1.4 A
BSP135L6433HTMA1
BSP135L6433HTMA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage and 0.48A max pulsed drain current. Ideal for power applications, it features a built-in diode, 45 ohm max RDS(on), and AEC-Q101 reference standard compliance.
.12 A
45 ohm
.48 A
BSP149H6906XTSA1
Infineon's BSP149H6906XTSA1 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for DEPLETION MODE operation. Featuring 2.6A IDM and 1.8Ω RDS(on), it suits automotive applications meeting AEC-Q101 standards.
200 V
.66 A
1.8 ohm
2.6 A
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