Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
STH185N10F3-2
STMicroelectronics
STH185N10F3-2 by STMicroelectronics is a powerful N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 180 A, power dissipation of 315 W, and operates up to 175 °C. Ideal for power management in industrial systems.
SINGLE
180 A
METAL-OXIDE SEMICONDUCTOR
1
175 Cel
NOT SPECIFIED
N-CHANNEL
315 W
FET General Purpose Power
YES
STH185N10F3-6
STH185N10F3-6 by STMicroelectronics is a powerful N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 180 A, power dissipation of 315 W, and operates up to 175 °C. Ideal for power management in industrial systems.
STH240N10F7-2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2;
ULTRA LOW RESISTANCE
500 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
.0025 ohm
R-PSSO-G2
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
300 W
720 A
GULL WING
SWITCHING
SILICON
STH265N6F6-2AG
STH265N6F6-2AG by STMicroelectronics is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 180 A and power dissipation up to 300 W, operating efficiently at temperatures up to 175 °C. Perfect for power management in various electronic devices.
STH265N6F6-6AG
STH265N6F6-6AG by STMicroelectronics is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 180 A and power dissipation of 300 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
STL260N3LLH6
STL260N3LLH6 by STMicroelectronics is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 260 A and power dissipation of 166 W, operating up to 175 °C. Ideal for efficient power management in various electronic devices.
260 A
e3
260
166 W
MATTE TIN
STL62P3LLH6
STL62P3LLH6 by STMicroelectronics is a P-channel MOSFET designed for efficient power management. It supports a max drain current of 62 A and power dissipation of 100 W, making it ideal for high-performance applications in compact designs. With an operating temp up to 175 °C, it's perfect for demanding environments.
62 A
P-CHANNEL
100 W
Other Transistors
CSD18503Q5AT
Texas Instruments
CSD18503Q5AT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 321A IDM, and 0.0062 ohm Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
AVALANCHE RATED
157 mJ
40 V
19 A
.0062 ohm
16 pF
R-PDSO-N8
8
150 Cel
-55 Cel
321 A
NO LEAD
DUAL
30
CSD87501LT
CSD87501LT by Texas Instruments is a N-CHANNEL FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features COMMON DRAIN configuration, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology. With a max operating temperature of 150°C, it offers reliable performance in various electronic systems.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
198 pF
R-PBGA-B10
e4
10
GRID ARRAY
NICKEL GOLD
BUTT
BOTTOM
CSD18563Q5A-P
CSD18563Q5A-P by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 251A IDM, and 0.0108 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching tasks in various electronic devices.
146 mJ
60 V
15 A
.0108 ohm
5.1 pF
251 A
CSD19535KTT
CSD19535KTT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 400A IDM, and 0.0041 ohm Drain-Source On Resistance. With a max operating temperature of 175°C, this MOSFET in SMALL OUTLINE package is ideal for high-power switching circuits.
451 mJ
200 A
.0041 ohm
38 pF
TO-263AB
400 A
STB120N10F4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AB; Peak Reflow Temperature (C): NOT SPECIFIED;
215 mJ
120 A
.01 ohm
390 A
STH160N4LF6-2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 120 A; No. of Elements: 1;
150 W
STL86N3LLH6AG
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Drain-Source On Resistance: .0076 ohm; Maximum Drain Current (Abs) (ID): 80 A;
80 A
.0076 ohm
60 W
DMP26M7UFG-13
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; JESD-30 Code: S-PDSO-F5; Minimum Operating Temperature: -55 Cel;
28 mJ
20 V
18 A
.0067 ohm
728 pF
S-PDSO-F5
5
SQUARE
2.3 W
FLAT
NVMFS5C410NT1G
Onsemi
NVMFS5C410NT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
578 mJ
300 A
.00092 ohm
70 pF
R-PDSO-F5
900 A
AEC-Q101
Matte Tin (Sn) - annealed
NVMFS5C410NT3G
NVMFS5C410NT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
NVMFS5C410NWFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Drain Current (Abs) (ID): 300 A; JESD-609 Code: e3;
NVMFS5C410NWFT3G
NVMFS5C410NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C430NLT1G
NVMFS5C430NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0022 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package for applications like automotive electronics due to AEC-Q101 standard compliance.
493 mJ
.0022 ohm
NVMFS5C430NLT3G
NVMFS5C430NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0022 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications meeting AEC-Q101 standards.
NVMFS5C430NLWFT1G
NVMFS5C430NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0022 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C430NLWFT3G
NVMFS5C430NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0022 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications meeting AEC-Q101 standards.
NVMFS5C430NT3G
NVMFS5C430NT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance.
338 mJ
185 A
.0017 ohm
45 pF
106 W
NVMFS5C430NWFT1G
NVMFS5C430NWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
NVMFS5C430NWFT3G
NVMFS5C430NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C442NT1G
NVMFS5C442NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(ON). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
220 mJ
140 A
.0023 ohm
40 pF
83 W
NVMFS5C442NT3G
NVMFS5C442NT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C442NWFT1G
NVMFS5C442NWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance and 175 °C max operating temp.
NVMFS5C442NWFT3G
NVMFS5C442NWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C450NLT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
110 A
.0044 ohm
METAL SEMICONDUCTOR
42 pF
68 W
740 A
NVMFS5C450NLWFT1G
NVMFS5C450NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0044 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Operating in the temperature range of -55 to 175 °C, it offers high power dissipation at 68W.
NVMFS5C450NLWFT3G
NVMFS5C450NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0044 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C450NT1G
NVMFS5C450NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 554A IDM, and 0.0033 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 compliance.
102 A
.0033 ohm
28 pF
554 A
NVMFS5C450NWFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 28 pF;
NVMFS5C450NWFT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Maximum Drain-Source On Resistance: .0033 ohm; Terminal Finish: Matte Tin (Sn) - annealed;
R6009KNJTL
ROHM
ROHM R6009KNJTL is a N-CHANNEL FET with 600V DS breakdown voltage, 27A IDM, and 0.535 ohm max RDS(on). Ideal for switching applications, it features a built-in diode and operates in enhancement mode. Package style is small outline with gull wing terminals.
153 mJ
600 V
9 A
.535 ohm
e2
27 A
TIN COPPER
STH140N6F7-6
STH140N6F7-6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for power management in compact designs.
BULK: 1000
.0032 ohm
193 pF
R-PSSO-G6
6
158 W
320 A
NTMFS5C450NLT3G
NTMFS5C450NLT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0044 ohm RDS(on). Ideal for power applications in small outline packages, operating from -55 to 175 °C.
R6024KNJTL
ROHM R6024KNJTL is a N-CHANNEL FET with 600V DS Breakdown Voltage, 72A IDM, and 0.165 ohm Max RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE. Features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and 497mJ EAS rating.
497 mJ
24 A
.165 ohm
72 A
CPH6443-TL-W
CPH6443-TL-W by Onsemi is a N-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM and 6A ID, with 0.037 ohm RDS(ON) for efficient operation. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for various power management tasks.
ESD PROTECTED
35 V
6 A
.037 ohm
R-PDSO-G6
e6
1.6 W
TIN BISMUTH
NVMFS5C456NLT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Operating Temperature: 175 Cel;
202 mJ
87 A
.006 ohm
21 pF
55 W
520 A
NVMFS5C456NLT3G
NVMFS5C456NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current and low resistance capabilities.
NVMFS5C456NLWFT1G
NVMFS5C456NLWFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 520A Pulsed Drain Current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
NVMFS5C456NLWFT3G
NVMFS5C456NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
DMN3033LSNQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 30 V; Terminal Finish: MATTE TIN;
HIGH RELIABILITY
.03 ohm
108 pF
R-PDSO-G3
3
DMNH4011SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Pulsed Drain Current (IDM): 120 A; Maximum Feedback Capacitance (Crss): 108 pF;
50 A
TO-252
50 W
MIL-STD-202
DMP3017SFGQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: S-PDSO-N5; Case Connection: DRAIN; Terminal Finish: MATTE TIN;
GATE PROTECTED
11.5 A
294 pF
S-PDSO-N5
2.5 W
© 2023 All rights reserved
