Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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PJD10P10A_L2_00001
Panjit International
PJD10P10A_L2_00001 by Panjit Int. is a P-CHANNEL FET with 100V DS Breakdown Voltage, 40A IDM, and 0.21 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it operates b/w -55 to 150 °C with SILICON element material.
SINGLE WITH BUILT-IN DIODE
100 V
2 A
.21 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252AA
R-PSSO-G2
1
2
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
P-CHANNEL
40 A
YES
GULL WING
SINGLE
SWITCHING
SILICON
NTMFS5C609NLT1G
Onsemi
NTMFS5C609NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications in automotive electronics due to its high current handling capability and low on-resistance.
451 mJ
DRAIN
60 V
250 A
.0023 ohm
R-PDSO-F5
e3
5
175 Cel
260
N-CHANNEL
167 W
900 A
Matte Tin (Sn) - annealed
FLAT
DUAL
30
NTMFS5H600NLT3G
NTMFS5H600NLT3G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 900A IDM. Ideal for applications requiring high power dissipation, such as automotive systems and industrial equipment due to its low on-resistance of 0.0017 ohm and max operating temperature of 150 °C.
338 mJ
.0017 ohm
160 W
NVATS4A102PZT4G
NVATS4A102PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 132A IDM, 58mJ EAS, and 0.0185 ohm RDS(ON). With a temperature range of -55 to 175 °C, it is suitable for automotive (AEC-Q101) and industrial applications.
58 mJ
30 V
44 A
.0185 ohm
e6
48 W
132 A
AEC-Q101
TIN BISMUTH
NVATS4A103PZT4G
NVATS4A103PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 180A IDM and 0.013 ohm RDS(ON), suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 175 °C operating range, it meets AEC-Q101 standards for automotive use.
57 mJ
60 A
.013 ohm
60 W
180 A
NVATS4A104PZT4G
NVATS4A104PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 246A IDM, 130mJ EAS, and 0.0084 ohm RDS(ON). With a temperature range of -55 to 175 °C, it is suitable for automotive (AEC-Q101) and industrial applications.
130 mJ
82 A
.0084 ohm
72 W
246 A
DMPH4015SPS-13
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
260 mJ
40 V
12 A
.015 ohm
526 pF
R-PDSO-F8
8
2.6 W
100 A
MIL-STD-202
MATTE TIN
NID9N05BCLT4G
NID9N05BCLT4G by Onsemi is a single N-channel FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 35A, and max operating temperature of 175 °C. This MOSFET has a package style of small outline and terminal finish of matte tin, making it suitable for high-power applications.
160 mJ
SINGLE WITH BUILT-IN DIODE AND RESISTOR
52 V
9 A
.181 ohm
40 pF
1.74 W
35 A
3850 ns
950 ns
NVD6416ANLT4G-VF01
NVD6416ANLT4G-VF01 by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 70A IDM, and 0.074 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
50 mJ
19 A
.074 ohm
71 W
70 A
DMT2004UFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Package Shape: SQUARE; JESD-609 Code: e3;
36 mJ
24 V
.01 ohm
559 pF
S-PDSO-N8
SQUARE
2.3 W
90 A
NO LEAD
DMN2022UNS-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 150 Cel;
14.7 mJ
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
10.7 A
.017 ohm
160 pF
S-PDSO-F8
1.9 W
DMTH4004SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 40 V;
.0032 ohm
102 pF
TO-252
180 W
160 A
NTDV20P06LT4G-VF01
NTDV20P06LT4G-VF01 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and EAS of 304mJ, operating in ENHANCEMENT MODE with -55 to 175 °C temperature range. The transistor has 0.15 ohm RDS(on), DRAIN case connection, and AEC-Q101 compliance.
304 mJ
15.5 A
.15 ohm
120 pF
65 W
50 A
185 ns
200 ns
SSVD5804NT4G
SSVD5804NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 125A IDM, 195mJ EAS, and 0.0075 ohm Drain-Source Resistance. Suitable for high-power switching circuits in automotive and industrial electronics due to its robust design and high power dissipation capability.
195 mJ
69 A
.0075 ohm
280 pF
125 A
TIN
DMPH3010LPS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Terminal Form: FLAT; Terminal Position: DUAL;
113 mJ
15 A
647 pF
DMNH6042SSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
65 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
5.3 A
.05 ohm
24 pF
R-PDSO-G8
2.1 W
DMPH3010LPSQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Maximum Drain-Source On Resistance: .01 ohm; Terminal Finish: MATTE TIN;
HIGH RELIABILITY
AEC-Q101; MIL-STD-202
DMN3009SFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Minimum Operating Temperature: -55 Cel; Maximum Drain-Source On Resistance: .0055 ohm;
55 mJ
16 A
.0055 ohm
248 pF
80 A
CSD18510KTT
Texas Instruments
CSD18510KTT by Texas Instruments is an N-CHANNEL Power FET for SWITCHING applications. It has a 40V DS Breakdown Voltage, 400A Max Pulsed Drain Current, and 0.0026 ohm Max Drain-Source Resistance. This SINGLE configuration FET operates in ENHANCEMENT MODE with a temperature range of -55 to 175 °C.
AVALANCHE RATED
328 mJ
200 A
.0026 ohm
551 pF
TO-263AB
400 A
CSD18512Q5BT
CSD18512Q5BT by Texas Instruments is an N-CHANNEL FET with 40V DS Breakdown Voltage and 32A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a 0.0023 ohm Drain-Source On Resistance. This PLASTIC/EPOXY transistor has a max operating temperature of 150°C and features a built-in DIODE.
205 mJ
32 A
333 pF
R-PDSO-N8
e4
NICKEL PALLADIUM GOLD
DMP2123LQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON; JESD-609 Code: e3;
3 A
.072 ohm
101 pF
R-PDSO-G3
3
DMN10H170SVTQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; JESD-30 Code: R-PDSO-G6; Transistor Element Material: SILICON;
2.6 A
.2 ohm
25 pF
R-PDSO-G6
6
1.7 W
11.2 A
DMP1081UCB4-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.59 W; Maximum Drain-Source On Resistance: .13 ohm; Peak Reflow Temperature (C): 260;
12 V
.13 ohm
90 pF
S-PBGA-B4
e1
4
GRID ARRAY
1.59 W
20 A
TIN SILVER COPPER
BALL
BOTTOM
DMN3032LFDB-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; No. of Terminals: 6; Minimum DS Breakdown Voltage: 30 V;
10 mJ
6.2 A
.03 ohm
44 pF
S-PDSO-N6
25 A
DMNH10H028SPSQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 54 A; Operating Mode: ENHANCEMENT MODE;
35 mJ
.028 ohm
54 A
DMTH8012LPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
10.2 mJ
80 V
10 pF
100 W
FDB9409L-F085
The Onsemi FDB9409L-F085 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 90A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 94W power dissipation, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max temp of 175 °C and meets AEC-Q101 standards.
33.7 mJ
.0047 ohm
245
94 W
72 ns
53 ns
NVATS4A101PZT4G
NVATS4A101PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 81A IDM, 25mJ EAS, and 0.03ohm RDS(ON), operating in the -55 to 175 °C temperature range. Suitable for automotive use (AEC-Q101) due to its robust design and high power dissipation of 36W.
25 mJ
27 A
36 W
81 A
FDMS1D4N03S
FDMS1D4N03S by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 211A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 1140A Pulsed Drain Current, and operates in ENHANCEMENT MODE. Suitable for surface mount with a max power dissipation of 74W.
384 mJ
211 A
.00109 ohm
180 pF
MO-240AA
74 W
1140 A
92 ns
45 ns
NTD5C464NT4G
NTD5C464NT4G by Onsemi is an N-channel Power FET with a 40V DS breakdown voltage and 59A max drain current. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include a built-in diode, small outline package style, and -55 to 175 °C operating temperature range.
136 mJ
59 A
.0058 ohm
40 W
320 A
NTD5C688NLT4G
NTD5C688NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 77A IDM, and 0.04 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for power management applications. Operating from -55 to 175 °C, it features a built-in diode and avalanche energy rating of 48 mJ.
48 mJ
17 A
.04 ohm
18 W
77 A
NVD5407NT4G
NVD5407NT4G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 75A IDM, and 0.026 ohm RDS(on). Ideal for applications requiring high power dissipation in small outline packages. Suitable for enhancement mode operation in various electronic devices.
150 mJ
38 A
.026 ohm
80 pF
75 W
75 A
STD5406NT4G-VF01
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Terminal Finish: Matte Tin (Sn) - annealed; Case Connection: DRAIN;
450 mJ
300 pF
150 A
SVD14N03RT4G
SVD14N03RT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 28A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 20.8W and operates in the temperature range of -55 to 150 °C.
FAST SWITCHING
25 V
14 A
11.4 A
20.8 W
28 A
FDB9503L-F085
FDB9503L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 110A ID. Ideal for SWITCHING applications, it features SINGLE configuration, METAL-OXIDE SEMICONDUCTOR tech, and operates b/w -55 to 175 °C.
984 mJ
110 A
FDD9409L-F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Terminal Position: SINGLE; Case Connection: DRAIN;
.0044 ohm
150 W
70 ns
47 ns
FDD9411L-F085
FDD9411L-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 25A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.0115 ohm.
22 mJ
.0115 ohm
28 pF
48.4 W
36 ns
17 ns
STD100N10LF7AG
STMicroelectronics
STD100N10LF7AG from STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 100 V, and operates in an enhancement mode at temperatures up to 175 °C. Ideal for power management in automotive and industrial systems.
200 mJ
.011 ohm
125 W
DMC3016LNS-13
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: MATTE TIN; No. of Terminals: 8;
24 mJ
.02 ohm
107 pF
N-CHANNEL AND P-CHANNEL
2 W
55 A
DMN2028UVT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
.024 ohm
78 pF
1.6 W
DMC3025LNS-13
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Feedback Capacitance (Crss): 57 pF; JESD-609 Code: e3;
9.8 mJ
7.2 A
.035 ohm
57 pF
1.8 W
45 A
NVMFS5A140PLZT1G
NVMFS5A140PLZT1G by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 140A Drain Current. Ideal for applications requiring high power dissipation, such as automotive systems, it features a built-in diode and operates in enhancement mode. With a compact rectangular package and matte tin finish, it ensures efficient performance in harsh environments.
420 mJ
140 A
7.2 ohm
3.8 W
200 W
560 A
NVMFS5A140PLZT3G
NVMFS5A140PLZT3G by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 140A Drain Current. Ideal for applications requiring high power dissipation up to 200W, such as automotive electronics due to AEC-Q101 standard compliance. Features include 560A Pulsed Drain Current and 7.2ohm On Resistance for efficient performance in enhancement mode operation.
NVMFS5A140PLZWFT1G
NVMFS5A140PLZWFT1G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, 560A IDM, and 420mJ EAS. Ideal for power applications in automotive industry due to AEC-Q101 compliance and high drain current capacity.
NVMFS5A140PLZWFT3G
NVMFS5A140PLZWFT3G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage and 560A IDM. Ideal for power applications, it features a built-in diode, 140A ID, and 7.2 ohm RDS(on). Suitable for automotive use with AEC-Q101 standard compliance.
NVMFS5A160PLZT1G
NVMFS5A160PLZT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for power applications, it operates in Enhancement Mode with 0.0105 ohm Drain-Source On Resistance. Its AEC-Q101 standard makes it suitable for automotive electronics.
335 mJ
.0105 ohm
NVMFS5A160PLZT3G
NVMFS5A160PLZT3G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 400A IDM, and 0.0105 ohm RDS(ON). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5A160PLZWFT1G
NVMFS5A160PLZWFT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 400A IDM, and 0.0105 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance and high operating temperature range of -55 to 175 °C.
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