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PJD10P10A_L2_00001

Panjit International

PJD10P10A_L2_00001 by Panjit International

PJD10P10A_L2_00001 by Panjit Int. is a P-CHANNEL FET with 100V DS Breakdown Voltage, 40A IDM, and 0.21 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it operates b/w -55 to 150 °C with SILICON element material.

Median Price

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2

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1k+

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Vyrian

USA . 6,574 parts In-Stock

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Nova Conductors

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.493

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$0.449

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Aztec Data Supply Inc.

USA . 183 parts In-Stock

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$1.346

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AZTECH Wire

Italy . 271 parts In-Stock

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Formix International (Excess)

India . 35,200 parts In-Stock

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Infinite Electronics LLP (Excess)

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Continental Prestige Electronics

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Argo Parts USA

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Aranea Global

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Overview

Elevate your power switching capabilities with the PJD10P10A_L2_00001 by Panjit International. Crafted with precision and excellence, this P-Channel Power Field Effect Transistor offers unrivaled performance and reliability for a wide range of applications. With its built-in diode and enhancement mode operation, this transistor ensures seamless functionality and efficiency. Say goodbye to overheating and inefficiency as you harness the power of this cutting-edge technology. Discover the difference with Panjit International and experience the future of power management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the product lightweight and durable, ideal for portable and long-lasting applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs have lower ON resistance and can be more efficient in certain circuit designs compared to N-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can protect the FET from reverse current flow, enhancing reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in tasks such as power management.

Surface Mount: YES

Surface mount capability allows for easy and compact installation on circuit boards, saving space and facilitating mass production.

Minimum DS Breakdown Voltage: 100 V

High breakdown voltage provides a safety margin and reliability in high voltage applications, preventing damage to the FET.

Maximum Pulsed Drain Current (IDM): 40 A

High maximum current rating allows for handling temporary high current spikes without failure, suitable for demanding applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs operate with a gate voltage above the threshold, providing precise control over the switching behavior.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the FET can withstand harsh environments and extended operation without overheating.

Maximum Drain-Source On Resistance: 0.21 ohm

Low ON resistance minimizes power losses and heat dissipation, ensuring efficient operation and high performance.

Technical Specifications

Power Field Effect Transistors (FET) PJD10P10A_L2_00001 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Panjit International

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.21 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

40 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PJD10P10A_L2_00001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Panjit International

PANJIT is a public company founded in May 1986. We are a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines. With insight observation and core technologies, PANJIT is able to continuously launch low profile products and accurate power rating devices which conforms to the customer needs. PANJIT commits to serve customers with the best service, thus we have established sales offices worldwide. We have sites in North America, Germany, Korea and China which allows us to provide better and prompt service.

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