Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSO211PNTMA1
Infineon Technologies
Infineon's BSO211PNTMA1 is a P-CHANNEL FET with 2 elements, built-in diode, and 20V DS breakdown voltage. Ideal for switching applications, it offers 18.8A max pulsed drain current and 0.067 ohm max on-resistance. This MOSFET in gull wing package is designed for enhancement mode operation in small outline form factor.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
28 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
4.7 A
.067 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
2
8
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
P-CHANNEL
18.8 A
YES
GULL WING
DUAL
SWITCHING
SILICON
BSO301SPNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G8; Terminal Form: GULL WING; No. of Elements: 1;
248 mJ
SINGLE WITH BUILT-IN DIODE
30 V
14.9 A
.008 ohm
1
NOT SPECIFIED
60 A
BSO303PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE;
97 mJ
8.2 A
.021 ohm
32.4 A
BSO303SPNTMA1
Infineon's BSO303SPNTMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 35.6A IDM, 0.021 ohm RDS(on), and 97mJ EAS rating. With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
8.9 A
35.6 A
IPB65R125C7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 101 W; Maximum Drain Current (ID): 18 A; JEDEC-95 Code: TO-263AB;
89 mJ
DRAIN
650 V
18 A
.125 ohm
TO-263AB
R-PSSO-G2
e3
150 Cel
-55 Cel
N-CHANNEL
101 W
75 A
TIN
SINGLE
IPD060N03LGBTMA1
Infineon's IPD060N03LGBTMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.009 ohm RDS(ON), and 50A ID. Ideal for SWITCHING applications, it features a built-in diode, 350A IDM, and 60mJ EAS rating. The PLASTIC/EPOXY package with GULL WING terminals supports ENHANCEMENT MODE operation in a RECTANGULAR shape.
60 mJ
50 A
.009 ohm
TO-252
350 A
IPD60R450E6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 185 mJ; Transistor Application: SWITCHING; No. of Terminals: 2;
185 mJ
600 V
.45 ohm
26 A
IPD60R520C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 22 A; Minimum DS Breakdown Voltage: 600 V;
153 mJ
8.1 A
.52 ohm
22 A
IPD60R600E6ATMA1
IPD60R600E6ATMA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 19A IDM, 133mJ EAS, and 0.6 ohm RDS(ON). Package: PLASTIC/EPOXY, GULL WING terminals, ENHANCEMENT MODE operation.
133 mJ
.6 ohm
19 A
IPD65R380C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 215 mJ;
215 mJ
10.6 A
.38 ohm
29 A
IPD65R950C6ATMA1
IPD65R950C6ATMA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, 0.95 ohm RDS(on), and 12A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a small outline package style.
50 mJ
.95 ohm
12 A
IPD65R950CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.7 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 650 V;
3.9 A
36.7 W
11 A
IPL65R165CFDAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 195 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): 2A;
614 mJ
21.3 A
.165 ohm
S-PSSO-N4
2A
4
-40 Cel
SQUARE
195 W
67 A
Tin (Sn)
NO LEAD
IPL65R190E6AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Moisture Sensitivity Level (MSL): 2A;
485 mJ
.19 ohm
66 A
IPL65R210CFDAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 151 W; Avalanche Energy Rating (EAS): 484 mJ; JESD-609 Code: e3;
484 mJ
16.6 A
.21 ohm
151 W
53 A
IPL65R310E6AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: SQUARE;
290 mJ
.31 ohm
36 A
IPL65R420E6AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 4; Case Connection: DRAIN;
.42 ohm
IPL65R660E6AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 650 V; Terminal Form: NO LEAD; Package Shape: SQUARE;
142 mJ
.66 ohm
16 A
ITD50N04S4L04ATMA1
Infineon ITD50N04S4L04ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 50A ID, and 0.004 ohm RDS(on). Commonly used in automotive applications due to AEC-Q101 standard compliance.
210 mJ
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
.004 ohm
R-PSSO-G4
200 A
AEC-Q101
SPB160N04S203CTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 160 A; Maximum Pulsed Drain Current (IDM): 640 A; No. of Elements: 1;
AVALANCHE RATED
810 mJ
160 A
.0029 ohm
R-PSSO-G6
6
640 A
SPB160N04S2L03DTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
.0037 ohm
IPD50R280CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Terminals: 2; JEDEC-95 Code: TO-252;
231 mJ
500 V
.28 ohm
42.9 A
IPD60R380E6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 600 V; Package Body Material: PLASTIC/EPOXY;
30 A
CSD16340Q3T
Texas Instruments
CSD16340Q3T by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Drain Current of 21A, Min DS Breakdown Voltage of 25V, and Max Pulsed Drain Current of 115A. With a package style of SMALL OUTLINE and operating temperatures ranging from -55 to 150°C, it's ideal for power management in various electronic devices.
80 mJ
25 V
21 A
.0078 ohm
69 pF
S-PDSO-N8
260
115 A
MATTE TIN
30
DMN10H170SVT-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY;
100 V
2.6 A
.2 ohm
25 pF
R-PDSO-G6
1.7 W
11.2 A
MIL-STD-202
DMN3016LDN-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Form: NO LEAD; Maximum Pulsed Drain Current (IDM): 45 A;
24 mJ
7.3 A
.02 ohm
82 pF
1.6 W
45 A
DMP2023UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Minimum Operating Temperature: -55 Cel; Moisture Sensitivity Level (MSL): 1;
27 mJ
7.6 A
.027 ohm
115 pF
S-PDSO-N6
e4
2.03 W
40 A
NICKEL PALLADIUM GOLD
DMT3008LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 3.2 mJ;
3.2 mJ
10.4 A
.01 ohm
53 pF
2.1 W
70 A
DMT3008LFDF-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
NDTL01N60ZT1G
Onsemi
NDTL01N60ZT1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 3.4A IDM, and 15 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package. Suitable for use in enhancement mode operations at temperatures ranging from -55 to 150 °C.
12 mJ
.25 A
15 ohm
3 pF
TO-261AA
R-PDSO-G4
2 W
3.4 A
NDTL01N60ZT3G
NDTL01N60ZT3G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 3.4A IDM, and 15 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package. Suitable for use in enhancement mode operations at temperatures ranging from -55 to 150 °C.
NTMFS5C612NLWFT1G
NTMFS5C612NLWFT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.0015 ohm RDS(on), and 900A IDM. Ideal for power applications in small outline packages, featuring METAL-OXIDE SEMICONDUCTOR tech and SILICON material.
451 mJ
60 V
.0015 ohm
R-PDSO-F5
5
900 A
Matte Tin (Sn) - annealed
FLAT
NVMFS5C404NT3G
NVMFS5C404NT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0007 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Enhances performance in power management systems with its high current handling capabilities.
907 mJ
378 A
.0007 ohm
120 pF
175 Cel
200 W
NVMFS5C404NWFT1G
NVMFS5C404NWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0007 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C404NWFT3G
NVMFS5C404NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0007 ohm RDS(on). It is an N-CHANNEL MOSFET ideal for automotive applications due to its AEC-Q101 standard compliance and high power dissipation of 200W.
DMN1019UVT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; JESD-30 Code: R-PDSO-G6;
4.7 mJ
12 V
10.7 A
MCH6436-TL-W
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Terminal Finish: TIN BISMUTH; Additional Features: ESD PROTECTED;
ESD PROTECTED
6 A
.034 ohm
R-XDSO-F6
e6
UNSPECIFIED
1.5 W
24 A
TIN BISMUTH
CPH6347-TL-W
CPH6347-TL-W by Onsemi is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 24A IDM, and 0.039 ohm RDS. It's ideal for power management applications due to its small outline package, 150°C max operating temp, and built-in diode configuration.
.039 ohm
CPH6442-TL-W
CPH6442-TL-W by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 24A IDM. Ideal for applications requiring high power dissipation, it features a built-in diode, operates in enhancement mode, and has a max operating temperature of 150 °C.
.043 ohm
DMN10H220LVT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; Maximum Drain Current (ID): 1.87 A; Package Shape: RECTANGULAR;
1.87 A
.22 ohm
17 pF
1.67 W
6.6 A
MCH6336-TL-W
MCH6336-TL-W by Onsemi is a P-CHANNEL FET for switching applications. It features a 12V DS breakdown voltage, 20A max pulsed drain current, and 0.043 ohm max drain-source resistance. With a small outline package style and operating temp up to 150 °C, it's ideal for power management in compact electronic devices.
5 A
R-XDSO-N6
20 A
MCH6431-TL-W
MCH6431-TL-W by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 20A IDM, and 0.055 ohm RDS(on). Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max temp of 150 °C.
.055 ohm
STD19NF20
STMicroelectronics
STD19NF20 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 15 A, a breakdown voltage of 200 V, and low on-resistance of 0.16 Ω. Ideal for power management in compact electronic devices.
110 mJ
200 V
15 A
.16 ohm
ZXMS6002GQTA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1; Terminal Form: GULL WING;
HIGH RELIABILITY
550 mJ
1.4 A
.675 ohm
ZXMS6006DGQTA
ZXMS6006DGQTA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 13A IDM, and 0.125 ohm Drain-Source Resistance. Ideal for automotive electronics due to AEC-Q101 standard compliance and high temperature range of -40 to 150 °C.
490 mJ
COMPLEX
13 A
STB24N65M2
STB24N65M2 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 64A IDM, 150W Abs Power Dissipation, and 0.23 ohm Drain-Source On Resistance. Suitable for ENHANCEMENT MODE operation in various electronic devices.
650 mJ
.23 ohm
150 W
64 A
FET General Purpose Power
STH175N4F6-2AG
STH175N4F6-2AG by STMicroelectronics is a powerful N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 120 A and power dissipation of 150 W, operating up to 175 °C. Ideal for power management in various electronic devices.
120 A
STH175N4F6-6AG
STH175N4F6-6AG by STMicroelectronics is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 120 A and power dissipation of 150 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
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