Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AUIRFZ44VZSTRL
Infineon Technologies
AUIRFZ44VZSTRL by Infineon Technologies is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 230A and EAS of 73mJ, suitable for high-power operations. With a low 0.012 ohm RDS(on), this MOSFET offers efficient performance in ENHANCEMENT MODE operation.
ULTRA LOW RESISTANCE
73 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
57 A
.012 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
230 A
AEC-Q101
YES
GULL WING
SINGLE
SWITCHING
SILICON
IRFH7182TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 320 A;
728 mJ
100 V
23 A
.0039 ohm
R-PDSO-N5
5
320 A
NO LEAD
DUAL
AUIRFSA8409-7P
AUIRFSA8409-7P by Infineon is a N-channel Power FET with 40V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 1440A and an operating temperature range from -55 to 175°C. The transistor has a built-in diode, Gull Wing terminal form, and small outline package style.
1450 mJ
40 V
360 A
.00069 ohm
R-PSSO-G6
6
175 Cel
-55 Cel
1440 A
IRFH7882TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Transistor Application: SWITCHING;
704 mJ
80 V
26 A
.0031 ohm
290 A
NTMFS5C404NT3G
Onsemi
NTMFS5C404NT3G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 900A Pulsed Drain Current. Ideal for applications requiring high power dissipation, such as automotive systems and industrial equipment due to its low on-resistance of 0.0007 ohm. Operating in enhancement mode, it offers a max operating temperature of 175 °C.
907 mJ
378 A
.0007 ohm
120 pF
R-PDSO-F5
e3
260
200 W
900 A
TIN
FLAT
30
NTMFS5C450NT1G
NTMFS5C450NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 102A ID, and 0.0033 ohm RDS(on). It's used in power applications due to its 800A IDM, 215mJ EAS rating, and -55 to 175°C operating temperature range.
215 mJ
102 A
.0033 ohm
28 pF
68 W
800 A
Matte Tin (Sn) - annealed
NTMFS5C450NT3G
NTMFS5C450NT3G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 800A IDM, and 0.0033 ohm RDS(on). It is used in applications requiring high power dissipation and operates in enhancement mode.
NVATS5A107PLZT4G
NVATS5A107PLZT4G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage and 165A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.017 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. Suitable for high-power systems requiring efficient switching capabilities.
80 mJ
55 A
.017 ohm
e6
P-CHANNEL
60 W
165 A
TIN BISMUTH
NVATS5A108PLZT4G
NVATS5A108PLZT4G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 231A IDM, 95mJ EAS, and 0.0104 ohm Drain-Source Resistance. With a temperature range of -55 to 175 °C, it is suitable for automotive electronics meeting AEC-Q101 standards.
95 mJ
77 A
.0104 ohm
72 W
231 A
NVATS5A302PLZT4G
NVATS5A302PLZT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 197mJ EAS, and 0.018 ohm RDS(ON). With a max power dissipation of 84W and operating temperature range of -55 to 175 °C, it is suitable for high-power electronic systems.
197 mJ
80 A
.018 ohm
84 W
NVMFS6B25NLT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN;
170 mJ
33 A
8 A
.039 ohm
62 W
177 A
MATTE TIN
NVMFS6B25NLT3G
NVMFS6B25NLT3G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 177A IDM, and 0.039 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS6B25NLWFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; JESD-30 Code: R-PDSO-F5; Maximum Pulsed Drain Current (IDM): 177 A;
NVMFS6B25NLWFT3G
NVMFS6B25NLWFT3G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 177A IDM, and 0.039 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS6B75NLT1G
NVMFS6B75NLT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 141A IDM, and 0.046 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
177 mJ
28 A
7 A
.046 ohm
56 W
141 A
NVMFS6B75NLWFT1G
NVMFS6B75NLWFT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 141A IDM, and 0.046 ohm RDS(ON). Ideal for power applications in automotive electronics due to AEC-Q101 compliance and 177mJ EAS rating.
NVMFS6B85NLT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Reference Standard: AEC-Q101; Package Shape: RECTANGULAR;
116 mJ
19 A
5.6 A
.072 ohm
42 W
93 A
NVMFS6B85NLT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 175 Cel;
NVMFS6B85NLWFT1G
NVMFS6B85NLWFT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 93A IDM, and 0.072 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NTMFS4C032NT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 21.6 W; Maximum Feedback Capacitance (Crss): 127 pF; Maximum Drain Current (ID): 7.2 A;
22 mJ
30 V
38 A
7.2 A
.00735 ohm
127 pF
150 Cel
21.6 W
106 A
NVATS5A114PLZT4G
NVATS5A114PLZT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 180A IDM and 0.016 ohm RDS(ON), suitable for high-power operations. With a small outline package and AEC-Q101 standard, it ensures reliable performance in automotive electronics.
100 mJ
60 A
.016 ohm
180 A
NVD6415ANLT4G-VF01
NVD6415ANLT4G-VF01 by Onsemi is a Power FET with 100V DS Breakdown Voltage, 80A IDM, and 79mJ EAS. Ideal for automotive applications due to AEC-Q101 standard compliance and -55 to 175 °C operating temperature range.
79 mJ
.056 ohm
70 pF
83 W
NTMFS4C028NT3G
NTMFS4C028NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 146A IDM, and 0.00473 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C.
42 mJ
52 A
9 A
.00473 ohm
25.5 W
146 A
SVD5803NT4G
The Onsemi SVD5803NT4G is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 85A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 240mJ Avalanche Energy Rating, and operates in ENHANCEMENT MODE. Perfect for high-power circuit designs requiring efficient switching capabilities.
240 mJ
85 A
.0057 ohm
228 A
SVD5806NT4G
SVD5806NT4G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 67A and EAS of 39mJ, operating in ENHANCEMENT MODE. This small outline transistor has a max ID of 33A, 0.019 ohm RDS(on), and can withstand temperatures from -55 to 175 °C.
39 mJ
.019 ohm
67 A
DMNH4006SPSQ-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
HIGH RELIABILITY
208 mJ
110 A
.007 ohm
DMNH6021SPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
64 mJ
.028 ohm
88 A
DMNH6042SPD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
65 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
5.7 A
.05 ohm
R-PDSO-F6
32 A
DMT3002LPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
700 mJ
240 A
.0025 ohm
300 pF
R-PDSO-F8
8
136 W
400 A
MIL-STD-202
DMTH10H030LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; No. of Elements: 1; No. of Terminals: 2;
85 mJ
.045 ohm
TO-252
50 A
DMTH4004LK3Q-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 200 A;
90 mJ
100 A
.005 ohm
200 A
DMNH6012LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Additional Features: HIGH RELIABILITY; Package Style (Meter): SMALL OUTLINE;
120 A
DMT3004LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
110 mJ
25 A
.0045 ohm
240 pF
S-PDSO-N8
SQUARE
95 A
DMT3004LFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
DMTH3004LPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Maximum Drain-Source On Resistance: .0038 ohm;
22 A
.0038 ohm
DMTH4004SK3Q-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
160 mJ
.0032 ohm
160 A
DMN3008SFGQ-13
DMN3008SFGQ-13 by Diodes Incorporated is a N-channel Power FET with 30V DS Breakdown Voltage, ideal for switching applications. It features 80A IDM, 101mJ EAS, and 0.0055 ohm RDS(on). Operating in enhancement mode, it has a max temp of 150°C and -55°C min temp. AEC-Q101 compliant for automotive use.
101 mJ
17.6 A
.0055 ohm
459 pF
S-PDSO-N5
2.1 W
DMNH3010LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Terminal Position: SINGLE;
75 mJ
15 A
.0095 ohm
DMNH6021SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 80 A; Peak Reflow Temperature (C): 260;
DMT3006LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 27.8 W; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
31 mJ
55.6 A
.01 ohm
72 pF
27.8 W
DMT6015LFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
14.5 mJ
9.5 A
20 pF
S-PDSO-F8
30 W
DMT3006LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; No. of Elements: 1; Case Connection: DRAIN;
14.1 A
S-PDSO-N6
e4
NICKEL PALLADIUM GOLD
DMNH6008SPSQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; Additional Features: HIGH RELIABILITY; Maximum Pulsed Drain Current (IDM): 140 A;
194 mJ
16.5 A
.008 ohm
140 A
DMNH6021SPD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; No. of Elements: 2; Operating Mode: ENHANCEMENT MODE;
8.2 A
.025 ohm
DMT3003LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; Terminal Position: DUAL; Package Shape: SQUARE;
250 mJ
MCQ4459-TP
Micro Commercial Components
MCQ4459-TP by Micro Commercial Components is a P-CHANNEL FET with 30V DS Breakdown Voltage, 26A IDM, and 0.046 ohm RDS. Ideal for power applications in small outline packages, operating from -55 to 150 °C.
14 mJ
6.5 A
90 pF
R-PDSO-G8
1.4 W
10
STD180N4F6
STMicroelectronics
STD180N4F6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
.0028 ohm
130 W
TK40P04M1(T6RSS-Q)
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
41 mJ
40 A
.0134 ohm
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