Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMP3017SFGQ-7
Diodes Incorporated
DMP3017SFGQ-7 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 0.01 ohm RDS(on), and operates in ENHANCEMENT MODE. With a small outline package style and AEC-Q101 reference standard, it's suitable for automotive electronics.
GATE PROTECTED
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
11.5 A
.01 ohm
METAL-OXIDE SEMICONDUCTOR
294 pF
S-PDSO-N5
e3
1
5
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
260
P-CHANNEL
2.5 W
80 A
AEC-Q101
YES
MATTE TIN
NO LEAD
DUAL
SWITCHING
SILICON
DMP6110SVT-13
DMP6110SVT-13 by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM, 18mJ EAS, and 0.105 ohm RDS(ON). With a small outline package and -55 to 150 °C operating range, it's suitable for various power management designs.
18 mJ
60 V
7.3 A
.105 ohm
44 pF
R-PDSO-G6
6
RECTANGULAR
1.8 W
24 A
GULL WING
DMT6009LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19.2 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
40.8 mJ
11 A
41 pF
S-PDSO-N8
8
N-CHANNEL
19.2 W
90 A
MIL-STD-202
STB34N50DM2AG
STMicroelectronics
STB34N50DM2AG by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a 500V breakdown voltage, 26A max drain current, and operates efficiently up to 150 °C. Ideal for power management in automotive and industrial systems.
700 mJ
500 V
26 A
.12 ohm
TO-263AB
R-PSSO-G2
2
245
104 A
SINGLE
NVMFS5C460NLT3G
Onsemi
NVMFS5C460NLT3G by Onsemi is a single N-channel power FET with a min DS breakdown voltage of 40V and max pulsed drain current of 396A. It operates in enhancement mode, has a max power dissipation of 50W, and is suitable for applications requiring high drain currents such as automotive systems.
107 mJ
40 V
78 A
.0072 ohm
22 pF
R-PDSO-F5
175 Cel
50 W
396 A
Matte Tin (Sn) - annealed
FLAT
30
NVMFS5C460NLWFT1G
NVMFS5C460NLWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 396A IDM, and 0.0072 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C645NLT1G
NVMFS5C645NLT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
185 mJ
100 A
.0057 ohm
17 pF
79 W
820 A
NVMFS5C645NLT3G
NVMFS5C645NLT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in high-power systems with its 185mJ EAS rating.
NVMFS5C645NLWFT1G
NVMFS5C645NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C645NLWFT3G
NVMFS5C645NLWFT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C426NT3G
NVMFS5C426NT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0013 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
739 mJ
235 A
.0013 ohm
59 pF
128 W
900 A
NVMFS5C426NWFT3G
NVMFS5C426NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 235A Drain Current, and 0.0013 ohm On Resistance. It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package suitable for automotive applications due to its AEC-Q101 compliance and high power dissipation of 128W.
NVMFS5C628NLT3G
NVMFS5C628NLT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0033 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance and 565mJ EAS rating.
565 mJ
.0033 ohm
NVMFS5C628NLWFT1G
NVMFS5C628NLWFT1G by Onsemi is a N-channel Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0033 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include single configuration with built-in diode, operating in enhancement mode.
NVMFS5C628NLWFT3G
NVMFS5C628NLWFT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0033 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for automotive applications meeting AEC-Q101 standard.
NTMFS5C404NLTT1G
NTMFS5C404NLTT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.001 ohm RDS(on). It is used in power applications due to its 200W Pdiss, -55 to 175 °C operating temp range, and DUAL terminal position.
907 mJ
370 A
.001 ohm
200 W
NTMFS5C404NLTT3G
NTMFS5C404NLTT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.001 ohm RDS(ON). It is used in power applications due to its 200W Pdiss, -55 to 175 °C operating temp range, and EAS of 907mJ.
NTMFS5C404NLTWFT1G
NTMFS5C404NLTWFT1G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.001 ohm RDS(on). Ideal for power management applications requiring high current handling capabilities in compact designs.
79.8 pF
NVMFS5C468NLWFT1G
NVMFS5C468NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 190A IDM, and 0.0176 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
95 mJ
37 A
.0176 ohm
11 pF
28 W
190 A
NVMFS5C468NLWFT3G
NVMFS5C468NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 190A IDM, and 0.0176 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C673NLWFT1G
NVMFS5C673NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 290A IDM, and 0.013 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
88 mJ
.013 ohm
290 A
NVMFS5C673NLWFT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; Case Connection: DRAIN; No. of Terminals: 5;
NTMFS5C410NLTT3G
NTMFS5C410NLTT3G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0012 ohm RDS(on). Ideal for high-power applications requiring fast switching and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high current handling capabilities.
706 mJ
330 A
.0012 ohm
167 W
TIN
NTMFS5C410NLTWFT1G
NTMFS5C410NLTWFT1G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0012 ohm RDS(on). It is used in applications requiring high power dissipation, such as automotive systems and industrial equipment.
NTMFS5C410NLTWFT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Terminal Form: FLAT; Package Style (Meter): SMALL OUTLINE;
NTMFS5C442NLTT3G
The Onsemi NTMFS5C442NLTT3G is a N-CHANNEL FET with 40V DS Breakdown Voltage, 130A ID, and 0.0037 ohm RDS(ON). It is used in power applications due to its 900A IDM, 265mJ EAS rating, and -55 to 175 °C operating temperature range.
265 mJ
130 A
.0037 ohm
37 pF
83 W
NVMFS5C682NLT1G
NVMFS5C682NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 60V DS breakdown voltage, and 130A pulsed drain current. Ideal for automotive applications due to AEC-Q101 standard compliance and 175 °C max operating temperature.
43 mJ
25 A
.0315 ohm
NVMFS5C682NLT3G
NVMFS5C682NLT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 130A IDM, and 0.0315 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C682NLWFT1G
NVMFS5C682NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 130A IDM, and 0.0315 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
NVMFS5C682NLWFT3G
NVMFS5C682NLWFT3G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage, 130A pulsed drain current, and 0.0315 ohm max RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS6B03NT1G
NVMFS6B03NT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 520A IDM, and 0.0048 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
180 mJ
100 V
145 A
20 A
.0048 ohm
198 W
520 A
NVMFS6B03NWFT1G
NVMFS6B03NWFT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 520A IDM, and 0.0048 ohm RDS(ON). It is an N-CHANNEL MOSFET ideal for automotive applications due to its AEC-Q101 standard compliance and high power dissipation of 198W.
NVMFS6B03NWFT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 198 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-F5;
NVMFS6B05NLT1G
NVMFS6B05NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 100V DS breakdown voltage, and 330A pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages like automotive electronics due to its 165W max power dissipation and AEC-Q101 reference standard compliance.
125 mJ
114 A
.0082 ohm
165 W
NVMFS6B05NLT3G
NVMFS6B05NLT3G by Onsemi is a Power FET with N-CHANNEL polarity, 100V DS breakdown voltage, and 330A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages like automotive electronics due to its 165W max power dissipation and AEC-Q101 reference standard compliance.
NVMFS6B05NLWFT1G
NVMFS6B05NLWFT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 330A IDM, and 0.0082 ohm RDS(ON). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS6B05NLWFT3G
NVMFS6B05NLWFT3G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 330A IDM, and 0.0082 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to its AEC-Q101 reference standard compliance.
NTMFS5C456NLT3G
NTMFS5C456NLT3G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(on). Ideal for power management applications due to its high drain current capacity and low on-resistance. Suitable for use in enhancement mode operation at temperatures ranging from -55 °C to 175°C.
202 mJ
87 A
.006 ohm
21 pF
55 W
NVMFS6B05NT1G
NVMFS6B05NT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 330A IDM, and 0.008 ohm RDS(ON). It's used in power applications due to its 165W Pdiss, -55 to 175 °C Temp Range, and AEC-Q101 compliance.
17 A
.008 ohm
NVMFS6B05NWFT1G
NVMFS6B05NWFT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 330A IDM, and 0.008 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Enhances performance in power management systems with its high current handling capabilities.
NVMFD5875NLT1G
NVMFD5875NLT1G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage, 80A IDM, and 0.045 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance, it features a small outline package and operates b/w -55 °C to 175°C.
40 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
22 A
7 A
.045 ohm
R-PDSO-F8
32 W
15.7 ns
11.3 ns
NVMFD5875NLT3G
NVMFD5875NLT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 80A IDM, and 0.045 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NVMFD5875NLWFT1G
NVMFD5875NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 80A IDM, and 0.045 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS6B03NLT1G
NVMFS6B03NLT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(ON). Widely used in power applications due to its 198W Pdiss, -55 to 175 °C operating range, and AEC-Q101 compliance.
NVMFS6B03NLT3G
NVMFS6B03NLT3G by Onsemi is a Power FET with N-CHANNEL configuration and built-in diode. It features a 100V DS breakdown voltage, 520A max pulsed drain current, and 0.006 ohm max drain-source resistance. Ideal for automotive applications due to AEC-Q101 standard compliance and high power dissipation of 198W.
Tin (Sn)
NVMFS6B03NLWFT1G
NVMFS6B03NLWFT1G by Onsemi is a N-channel Power FET with 100V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS6B14NLT1G
NVMFS6B14NLT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 140A IDM, and 0.019 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
29 mJ
.019 ohm
NOT SPECIFIED
140 A
NVMFS6B14NLWFT1G
NVMFS6B14NLWFT1G by Onsemi is a power FET with 100V DS breakdown voltage and 0.019 ohm max RDS(on). It has 140A IDM, 29mJ EAS, and AEC-Q101 standard. Ideal for automotive applications due to its N-channel configuration and built-in diode in a small outline package.
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