Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NVMFS5C468NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 190A IDM, and 0.0176 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
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The plastic/epoxy material used in the packaging provides good insulation and protection for the internal components of the FET.
N-channel FETs typically have lower ON resistance and better performance compared to P-channel FETs, making them a popular choice for many applications.
The built-in diode helps to protect the FET from reverse voltage spikes, enhancing its reliability and durability.
Surface mount technology allows for easy and efficient PCB assembly, making the FET suitable for modern electronic devices.
The low ON resistance of the FET helps in minimizing power losses and improving overall efficiency of the circuit.
Power Field Effect Transistors (FET) NVMFS5C468NLWFT3G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
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NVMFS5C468NLWFT3G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Wafer Fab Transfer 14/Dec/2021
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N7002
Rectron
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
LM358ADR
Texas Instruments
LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.
BAV99
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Taitron Components
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSS138
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;
DS18B20U+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
Kingwell Technonlogy
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
LM358N
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WS
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555D
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
2N2222A
International Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148W-7-F
Multicomp Pro
Cheng-yi Electronic
LIS3DHTR
STMicroelectronics
LIS3DHTR by STMicroelectronics is a 16-terminal accelerometer with output range of 0.18-1.62V, ideal for motion sensing applications. Operating temperature ranges from -40 to 85°C, making it suitable for various environments. With a compact square package body of 3x3mm and digital voltage output type, it is commonly used in surface mount designs.
FDV303N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
BAT54C-7-F
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
MMBT2907ALT1G
Rochester Electronics
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;
LTC4451AV#TRPBF
Analog Devices
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 4; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
PSMN040-100MSEX
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Avalanche Energy Rating (EAS): 54 mJ; Transistor Application: SWITCHING;
BSS123
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: MATTE TIN; Operating Mode: ENHANCEMENT MODE;
SQM120P10-10M1L_GE3
Vishay Intertechnology
Vishay Intertechnology's SQM120P10-10M1L_GE3 is a P-channel FET with 100V DS breakdown voltage, 480A IDM, and 0.0101 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
FDD4141-F085P
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
IRF3205STRLPBF
Infineon Technologies
Infineon's IRF3205STRLPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). With ENHANCEMENT MODE operation and DRAIN connection, it offers high power dissipation of 200W in a SMALL OUTLINE package.
BSP297H6327XTSA1
Infineon's BSP297H6327XTSA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for power applications. Features include 2.64A IDM, 1.8Ω RDS(on), and AEC-Q101 compliance. Suitable for enhancement mode operation in automotive electronics due to its high reliability and performance.
AUIRFN8459TR
AUIRFN8459TR by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 320A IDM, 66mJ EAS, and 0.0059 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor has DUAL terminals and AEC-Q101 standard compliance.
TN2510N8-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-30 Code: R-PSSO-F3; Maximum Feedback Capacitance (Crss): 25 pF;
IRF740PBF
Vishay Intertechnology's IRF740PBF is a N-CHANNEL Power FET with 400V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 520mJ EAS rating, and 0.55 ohm RDS(on).
FDB2710
FDB2710 by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage, 50A Drain Current, and 0.0425 ohm On Resistance. Ideal for power management applications due to its 260W Power Dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration.
IRLML6344TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
STP80NF10FP
STP80NF10FP by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has 152A IDM and 350mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.015 ohm Drain-Source On Resistance and can handle up to 40W power dissipation.
IRF640
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 122 ns; Transistor Element Material: SILICON;
SPW20N60C3FKSA1
SPW20N60C3FKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, 62.1A IDM, and 0.19 ohm RDS(on). It is used in power applications due to its 690mJ EAS rating, operating at up to 150°C.
BSC070N10NS3GATMA1
Infineon's BSC070N10NS3GATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.007 ohm RDS(on), and 360A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package with DUAL terminals and built-in diode ensures reliable performance in various systems.
IRF3205PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Case Connection: DRAIN; No. of Elements: 1;
IRF7319TRPBF
IRF7319TRPBF by Infineon is a Power FET with N- and P-channel types. It features 2 separate elements with built-in diode, ideal for switching applications. With a max pulsed drain current of 30A and low on-resistance of 0.029 ohm, it operates in enhancement mode for efficient performance.
IRF7410TRPBF
Infineon's IRF7410TRPBF is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 65A IDM, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package, it can withstand -55 to 150 °C temperatures.
IRFL9014TRPBF
Vishay Intertechnology's IRFL9014TRPBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 3.1W.
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NVMFS5C604NLAFT1G
NVMFS5C604NLAFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5113PLT1G
NVMFS5113PLT1G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 415A and an avalanche energy rating of 315mJ. This transistor is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of MSL1.
NVMFD5C650NLWFT1G
NVMFD5C650NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 502A IDM, and 0.0058 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NVMFD6H846NLWFT1G
NVMFD6H846NLWFT1G by Onsemi is an N-CHANNEL Power FET with 80V DS Breakdown Voltage and 114A Pulsed Drain Current. Ideal for automotive applications due to AEC-Q101 standard compliance, it features a small outline package style and operates in enhancement mode with -55°C to 175°C temperature range.
NVMFS6H800NT1G
NVMFS6H800NT1G by Onsemi is a Power FET with 80V DS Breakdown Voltage, 203A Drain Current, and 0.0021 ohm On Resistance. It is used in applications requiring high power dissipation and operates in temperatures ranging from -55 to 175 °C. Ideal for automotive and industrial sectors due to AEC-Q101 standard compliance.
NVMFS5C604NLWFAFT1G
NVMFS5C604NLWFAFT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance.
NVMFS5A140PLZWFT1G
NVMFS5A140PLZWFT1G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, 560A IDM, and 420mJ EAS. Ideal for power applications in automotive industry due to AEC-Q101 compliance and high drain current capacity.
NVMFS5C404NLAFT1G
NVMFS5C404NLAFT1G by Onsemi is a power FET with N-channel polarity, 40V DS breakdown voltage, and 370A max drain current. It is commonly used in applications requiring high power dissipation and temperature resistance, such as automotive electronics or industrial equipment.
NVMFD5C650NLT1G
NVMFD5C650NLT1G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage and 502A max pulsed drain current. It features a separate configuration with built-in diode, suitable for applications requiring high power dissipation such as automotive electronics. Operating in enhancement mode, it offers low on-resistance of 0.0058 ohm and can withstand temperatures from -55 to 175°C.
NVMFS5C410NAFT1G
NVMFS5C410NAFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 900A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages like automotive electronics due to its 166W max power dissipation and AEC-Q101 reference standard compliance.
NVMFD5C466NLT1G
NVMFD5C466NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 198A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
NVMFS5C404NWFAFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Minimum DS Breakdown Voltage: 40 V; Maximum Feedback Capacitance (Crss): 120 pF;
NVMFS5C442NLWFAFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): 260;
NVMFS5C404NLWFAFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 370 A; JESD-30 Code: R-PDSO-F5;
NVMFD5C446NLT1G
NVMFD5C446NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 644A Max Pulsed Drain Current. Ideal for automotive applications due to AEC-Q101 standard compliance and 175°C Max Operating Temp.
NVMFS5832NLT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 127 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn) - annealed;
NVMFS6H818NWFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Avalanche Energy Rating (EAS): 731 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NVMFS5C404NLWFT1G
NVMFS5C404NLWFT1G by Onsemi is a single N-channel power FET with a max drain current of 352A and a max power dissipation of 200W. It utilizes metal-oxide semiconductor technology and can operate at temperatures up to 175°C. This FET is suitable for various applications requiring high power and efficient switching capabilities.
NVMFS3D6N10MCLT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; No. of Elements: 1; No. of Terminals: 5;
NVMFS5113PLWFT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; Reference Standard: AEC-Q101;
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